In situ deposition of MgB2 thin films by magnetron cosputtering and sputtering combined with thermal evaporation

2005 ◽  
Vol 423 (3-4) ◽  
pp. 89-95 ◽  
Author(s):  
R. Schneider ◽  
J. Geerk ◽  
G. Linker ◽  
F. Ratzel ◽  
A.G. Zaitsev ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Evaporation ◽  
In Situ Deposition ◽  
Mgb2 Thin Films

GROWTH OF MgB2 THIN FILMS BY MEANS OF IN SITU DEPOSITION TECHNIQUES

2003 ◽  
Vol 17 (04n06) ◽  
pp. 703-708 ◽  
Author(s):  
R. ROGAI ◽  
V. GALLUZZI ◽  
A. MANCINI ◽  
G. CELENTANO ◽  
T. PETRISOR ◽  
...  
Keyword(s):  
Thin Films ◽  
Film Growth ◽  
Superconducting Phase ◽  
Resistivity Measurements ◽  
In Situ Deposition ◽  
Plasma Species ◽  
Annealing Procedure ◽  
Mgb2 Thin Films ◽  
Deposition Techniques

We report on the growth of MgB 2 thin films by means of Pulsed Laser Deposition (PLD) and Electron Beam (EB) deposition techniques. In order to develop an in-situ deposition procedure both techniques have been exploited following two approaches: the "as grown" procedure, where the superconducting phase is formed during the film growth, and no further process is performed, and the "annealing" procedure, where precursor layers are deposited and annealed in argon atmosphere. In the case of EB evaporated films, the "as grown" procedure revealed to be inadequate, because of the low reactivity of the thermally evaporated species and the high magnesium volatility. On the contrary, using PLD, the higher reactivity of the plasma species promotes the formation of the superconducting phase at deposition temperature as low as 350°C. In the "annealing" procedure, different kinds of precursor layers have been studied, in order to reduce and prevent the fast Mg evaporation at high temperature. Different annealing processes were investigated in order to promote the interdiffusion and reaction between Mg and B. The films were characterised by means of resistivity measurements and X-ray analyses. The surface morphology was observed by SEM microscopy.

scholarly journals 2-Step In-situ Annealing of Sputter Deposited MgB2 Thin Films

2003 ◽  
Vol 38 (11) ◽  
pp. 635-638
Author(s):  
Zon MORI ◽  
Yuichiro ISHIZAKI ◽  
Toshiya DOI ◽  
Yoshinori HAKURAKU ◽  
Michiya OKADA ◽  
...  
Keyword(s):  
Thin Films ◽  
Sputter Deposited ◽  
Mgb2 Thin Films

scholarly journals In situ epitaxial MgB2 thin films for superconducting electronics

2002 ◽  
Vol 1 (1) ◽  
pp. 35-38 ◽  
Author(s):  
Xianghui Zeng ◽  
Alexej V. Pogrebnyakov ◽  
Armen Kotcharov ◽  
James E. Jones ◽  
X. X. Xi ◽  
...  
Keyword(s):  
Thin Films ◽  
Superconducting Electronics ◽  
Mgb2 Thin Films

In Situ Deposition of YBCO Thin Films by Sputtering under Low Oxygen Partial Pressure

1994 ◽  
Vol 33 (Part 2, No. 5B) ◽  
pp. L718-L721 ◽  
Author(s):  
Yong Ki Park ◽  
Keunseop Park ◽  
Soon-Gul Lee ◽  
Dong Chan Shin ◽  
Jong-Chul Park
Keyword(s):  
Thin Films ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Low Oxygen ◽  
Ybco Thin Films ◽  
In Situ Deposition

Superconducting properties of two-step in situ annealed MgB2 thin films

2004 ◽  
Vol 412-414 ◽  
pp. 1371-1375 ◽  
Author(s):  
Zon Mori ◽  
Toshiya Doi ◽  
Yuichiro Ishizaki ◽  
Hitoshi Kitaguchi ◽  
Michiya Okada ◽  
...  
Keyword(s):  
Thin Films ◽  
Superconducting Properties ◽  
Mgb2 Thin Films

Uniform MgB2 thin films grown on Si(111) and Al2O3(0001) substrates prepared by e-beam evaporation and in situ annealing methods

2006 ◽  
Vol 99 (8) ◽  
pp. 08M512 ◽  
Author(s):  
Yi Bing Zhang ◽  
Hong Mei Zhu ◽  
Shi Ping Zhou ◽  
Shi Ying Ding ◽  
Zhi Wei Lin ◽  
...  
Keyword(s):  
Thin Films ◽  
Mgb2 Thin Films

In situ synthesis of MgB2 thin films for tunnel junctions

2004 ◽  
Vol 85 (22) ◽  
pp. 5290-5292 ◽  
Author(s):  
R. Schneider ◽  
J. Geerk ◽  
F. Ratzel ◽  
G. Linker ◽  
A. G. Zaitsev
Keyword(s):  
Thin Films ◽  
Tunnel Junctions ◽  
In Situ Synthesis ◽  
Mgb2 Thin Films

Deposition of MgB2 Thin Films on Nb Substrates Using an In Situ Annealing PLD Method

2007 ◽  
Vol 546-549 ◽  
pp. 2027-2030 ◽  
Author(s):  
Yue Zhao ◽  
Yi Sun Wu ◽  
S.X. Dou ◽  
T. Tajima ◽  
O.S. Romanenko
Keyword(s):  
Thin Films ◽  
Large Scale ◽  
Pulsed Laser ◽  
Buffer Layers ◽  
Laser Deposition ◽  
Rf Cavities ◽  
Superconducting Rf ◽  
Mgb2 Thin Films ◽  
Scanning Electron

MgB2 thin films have been coated on Nb substrates without any buffer layers. An in situ pulsed laser deposition (PLD) method was used to prepare the coating. The interface between films and substrates has been characterized by scanning electron microscopy (SEM). Surface impedance has been measured for the MgB2 films on Nb substrates. The results were discussed with regard to the potential large scale applications in superconducting RF cavities.

Real-Time Investigations on the Formation of Cu(In,Ga)Se2 While Annealing Precursors Produced with a Combination of Sputtering and Thermal Evaporation

2007 ◽  
Vol 1012 ◽  
Author(s):  
Stefan Jost ◽  
Frank Hergert ◽  
Rainer Hock ◽  
Michael Purwins
Keyword(s):  
Thin Films ◽  
Real Time ◽  
Thermal Evaporation ◽  
Indium Selenide ◽  
Transfer Reactions ◽  
X Ray Diffraction ◽  
X Ray ◽  
Precursor Phase ◽  
Elemental Layer

AbstractWe have investigated the formation of Cu(In,Ga)Se2 thin films by real-time X-ray diffraction (XRD) experiments while annealing differently deposited and composed stacked elemental layer (SEL) precursors.The in-situ measurements during the selenization of bi-layered Cu/In precursors reveal, that the semiconductor formation process is similar for precursors with thermally evaporated or sputtered indium. In both cases, the formation of binary copper and indium selenides is observed at temperatures around the melting point of selenium. After subsequent selenium transfer reactions, the chalcopyrite CuInSe2 is formed from the educt phases Cu2-xSe and InSe.The addition of gallium leads to the formation of the intermetallic precursor phase Cu9Ga4, which reduces the overall amount of copper and gallium selenides at process temperatures above 500 K. This causes an ongoing selenization in the indium selenium subsystem, which results in the formation of CuInSe2 from the educt phases Cu2-xSe and the selenium richest indium selenide g-In2Se3.

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