scholarly journals Neuromorphic Computing Systems: From CMOS To Emerging Nonvolatile Memory

2019 ◽  
Vol 12 (0) ◽  
pp. 53-64
Author(s):  
Chaofei Yang ◽  
Ximing Qiao ◽  
Yiran Chen
Keyword(s):  
Nonvolatile Memory ◽  
Neuromorphic Computing ◽  
Computing Systems

Organic synaptic devices based on ionic gel with reduced leakage current

2021 ◽  
Vol 57 (15) ◽  
pp. 1907-1910
Author(s):  
Dapeng Liu ◽  
Yiwei Zhao ◽  
Qianqian Shi ◽  
Shilei Dai ◽  
Li Tian ◽  
...  
Keyword(s):  
Solid State ◽  
Leakage Current ◽  
Dielectric Film ◽  
Neuromorphic Computing ◽  
Computing Systems ◽  
Current Reduction

A solid-state hybrid electrolyte dielectric film was designed for leakage current reduction, synaptic simulation and neuromorphic computing systems.

Reliability-Driven Memristive Crossbar Design in Neuromorphic Computing Systems

2021 ◽  
pp. 1-14
Author(s):  
Qi Xu ◽  
Junpeng Wang ◽  
Bo Yuan ◽  
Qi Sun ◽  
Song Chen ◽  
...  
Keyword(s):  
Neuromorphic Computing ◽  
Computing Systems

scholarly journals Ionic Sieving Through One‐Atom‐Thick 2D Material Enables Analog Nonvolatile Memory for Neuromorphic Computing

Small ◽  
2021 ◽  
pp. 2103543
Author(s):  
Revannath Dnyandeo Nikam ◽  
Jongwon Lee ◽  
Wooseok Choi ◽  
Writam Banerjee ◽  
Myonghoon Kwak ◽  
...  
Keyword(s):  
Nonvolatile Memory ◽  
Neuromorphic Computing ◽  
2D Material

scholarly journals Control of the Boundary between the Gradual and Abrupt Modulation of Resistance in the Schottky Barrier Tunneling-Modulated Amorphous Indium-Gallium-Zinc-Oxide Memristors for Neuromorphic Computing

Electronics ◽  
2019 ◽  
Vol 8 (10) ◽  
pp. 1087 ◽  
Author(s):  
Jun Tae Jang ◽  
Geumho Ahn ◽  
Sung-Jin Choi ◽  
Dong Myong Kim ◽  
Dae Hwan Kim
Keyword(s):  
Zinc Oxide ◽  
Schottky Barrier ◽  
Oxygen Content ◽  
Bimodal Distribution ◽  
Indium Gallium Zinc Oxide ◽  
Metal Electrodes ◽  
Neuromorphic Computing ◽  
Computing Systems ◽  
Proposed Model ◽  
Indium Gallium

The transport and synaptic characteristics of the two-terminal Au/Ti/ amorphous Indium-Gallium-Zinc-Oxide (a-IGZO)/thin SiO2/p+-Si memristors based on the modulation of the Schottky barrier (SB) between the resistive switching (RS) oxide layer and the metal electrodes are investigated by modulating the oxygen content in the a-IGZO film with the emphasis on the mechanism that determines the boundary of the abrupt/gradual RS. It is found that a bimodal distribution of the effective SB height (ΦB) results from further reducing the top electrode voltage (VTE)-dependent Fermi-level (EF) followed by the generation of ionized oxygen vacancies (VO2+s). Based on the proposed model, the influences of the readout voltage, the oxygen content, the number of consecutive VTE sweeps on ΦB, and the memristor current are explained. In particular, the process of VO2+ generation followed by the ΦB lowering is gradual because increasing the VTE-dependent EF lowering followed by the VO2+ generation is self-limited by increasing the electron concentration-dependent EF heightening. Furthermore, we propose three operation regimes: the readout, the potentiation in gradual RS, and the abrupt RS. Our results prove that the Au/Ti/a-IGZO/SiO2/p+-Si memristors are promising for the monolithic integration of neuromorphic computing systems because the boundary between the gradual and abrupt RS can be controlled by modulating the SiO2 thickness and IGZO work function.

scholarly journals Memristive Spiking Neural Networks Trained with Unsupervised STDP

Electronics ◽  
2018 ◽  
Vol 7 (12) ◽  
pp. 396 ◽  
Author(s):  
Errui Zhou ◽  
Liang Fang ◽  
Binbin Yang
Keyword(s):  
Neural Networks ◽  
Feature Learning ◽  
Spike Timing ◽  
Spiking Neural Networks ◽  
Learning Method ◽  
Hardware Complexity ◽  
Neuromorphic Computing ◽  
Computing Systems ◽  
Von Neumann ◽  
Complex Architectures

Neuromorphic computing systems are promising alternatives in the fields of pattern recognition, image processing, etc. especially when conventional von Neumann architectures face several bottlenecks. Memristors play vital roles in neuromorphic computing systems and are usually used as synaptic devices. Memristive spiking neural networks (MSNNs) are considered to be more efficient and biologically plausible than other systems due to their spike-based working mechanism. In contrast to previous SNNs with complex architectures, we propose a hardware-friendly architecture and an unsupervised spike-timing dependent plasticity (STDP) learning method for MSNNs in this paper. The architecture, which is friendly to hardware implementation, includes an input layer, a feature learning layer and a voting circuit. To reduce hardware complexity, some constraints are enforced: the proposed architecture has no lateral inhibition and is purely feedforward; it uses the voting circuit as a classifier and does not use additional classifiers; all neurons can generate at most one spike and do not need to consider firing rates and refractory periods; all neurons have the same fixed threshold voltage for classification. The presented unsupervised STDP learning method is time-dependent and uses no homeostatic mechanism. The MNIST dataset is used to demonstrate our proposed architecture and learning method. Simulation results show that our proposed architecture with the learning method achieves a classification accuracy of 94.6%, which outperforms other unsupervised SNNs that use time-based encoding schemes.

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