scholarly journals Ionic Sieving Through One‐Atom‐Thick 2D Material Enables Analog Nonvolatile Memory for Neuromorphic Computing

Small ◽  
2021 ◽  
pp. 2103543
Author(s):  
Revannath Dnyandeo Nikam ◽  
Jongwon Lee ◽  
Wooseok Choi ◽  
Writam Banerjee ◽  
Myonghoon Kwak ◽  
...  
Keyword(s):  
Nonvolatile Memory ◽  
Neuromorphic Computing ◽  
2D Material

scholarly journals Synaptic Devices: 2D Material Based Synaptic Devices for Neuromorphic Computing (Adv. Funct. Mater. 4/2021)

2021 ◽  
Vol 31 (4) ◽  
pp. 2170022
Author(s):  
Guiming Cao ◽  
Peng Meng ◽  
Jiangang Chen ◽  
Haishi Liu ◽  
Renji Bian ◽  
...  
Keyword(s):  
Neuromorphic Computing ◽  
2D Material

Air-stable Artificial Synapse Based on Lead-free Double Perovskite Cs2AgBiBr6 Film for Neuromorphic Computing

2021 ◽  
Author(s):  
Jie Lao ◽  
Wen Xu ◽  
Chunli Jiang ◽  
Ni Zhong ◽  
Bobo Tian ◽  
...  
Keyword(s):  
Nonvolatile Memory ◽  
Double Perovskite ◽  
Lead Free ◽  
Neuromorphic Computing ◽  
Artificial Synapse ◽  
Halide Perovskites

Halide perovskites (HPs) are promising materials for preparing nonvolatile memory and artificial synapse devices. However, the instability and toxicity of lead HPs seriously restrict their further application. Herein, a lead-free...

scholarly journals Nanoimaging of Organic Charge Retention Effects: Implications for Nonvolatile Memory, Neuromorphic Computing, and High Dielectric Breakdown Devices

2019 ◽  
Vol 2 (8) ◽  
pp. 4711-4716 ◽  
Author(s):  
Yingjie Zhang ◽  
Jun Kang ◽  
Olivier Pluchery ◽  
Louis Caillard ◽  
Yves J. Chabal ◽  
...  
Keyword(s):  
Nonvolatile Memory ◽  
Dielectric Breakdown ◽  
Neuromorphic Computing ◽  
Charge Retention ◽  
High Dielectric

scholarly journals Evolutionary 2D organic crystals for optoelectronic transistors and neuromorphic computing

2022 ◽  
Author(s):  
Fangsheng Qian ◽  
Xiaobo Bu ◽  
Junjie Wang ◽  
Ziyu Lv ◽  
Su-Ting Han ◽  
...  
Keyword(s):  
Data Storage ◽  
Nonvolatile Memory ◽  
Wide Spectrum ◽  
Organic Crystals ◽  
Algorithm Optimization ◽  
Neuromorphic Computing ◽  
Memory Circuit ◽  
Computing Paradigm ◽  
Free Interfaces ◽  
Shielding Effects

Abstract Brain-inspired neuromorphic computing has been extensively researched, taking advantage of increased computer power, the acquisition of massive data, and algorithm optimization. Neuromorphic computing requires mimicking synaptic plasticity and enables near-in-sensor computing. In synaptic transistors, how to elaborate and examine the link between microstructure and characteristics is a major difficulty. Due to the absence of interlayer shielding effects, defect-free interfaces, and wide spectrum responses, reducing the thickness of organic crystals to the 2D limit has a lot of application possibilities in this computing paradigm. This paper presents an update on the progress of 2D organic crystal-based transistors for data storage and neuromorphic computing. The promises and synthesis methodologies of 2D organic crystals are summarized. Following that, applications of 2D organic crystals for ferroelectric nonvolatile memory, circuit-type optoelectronic synapses, and neuromorphic computing are addressed. Finally, new insights and challenges for the field's future prospects are presented, pushing the boundaries of neuromorphic computing even farther.

2D Material Based Synaptic Devices for Neuromorphic Computing

2020 ◽  
pp. 2005443
Author(s):  
Guiming Cao ◽  
Peng Meng ◽  
Jiangang Chen ◽  
Haishi Liu ◽  
Renji Bian ◽  
...  
Keyword(s):  
Neuromorphic Computing ◽  
2D Material

Investigation of ferroelectrics using conventional and in situ electron microscopy

1994 ◽  
Vol 52 ◽  
pp. 586-587
Author(s):  
V. Saikumar ◽  
H. M. Chan ◽  
M. P. Harmer
Keyword(s):  
Nonvolatile Memory ◽  
Ferroelectric Materials ◽  
Gate Insulator ◽  
Sensors And Actuators ◽  
In Situ Electron Microscopy ◽  
Ferroelectric Domains ◽  
Domain Boundaries ◽  
Domain Interactions ◽  
Memory Applications

In recent years, there has been a growing interest in the application of ferroelectric thin films for nonvolatile memory applications and as a gate insulator in DRAM structures. In addition, bulk ferroelectric materials are also widely used as components in electronic circuits and find numerous applications in sensors and actuators. To a large extent, the performance of ferroelectric materials are governed by the ferroelectric domains (with dimensions in the micron to sub-micron range) and the switching of domains in the presence of an applied field. Conventional TEM studies of ferroelectric domains structures, in conjunction with in-situ studies of the domain interactions can aid in explaining the behavior of ferroelectric materials, while providing some answers to the mechanisms and processes that influence the performance of ferroelectric materials. A few examples from bulk and thin film ferroelectric materials studied using the TEM are discussed below.Figure 1 shows micrographs of ferroelectric domains obtained from undoped and Fe-doped BaTiO3 single crystals. The domain boundaries have been identified as 90° domains with the boundaries parallel to <011>.

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