scholarly journals Aluminum oxide film thickness and emittance

1991 ◽  
Author(s):  
J.K. Thomas ◽  
R.S. Ondrejcin
Keyword(s):  
Oxide Film ◽  
Aluminum Oxide ◽  
Film Thickness ◽  
Aluminum Oxide Film ◽  
Oxide Film Thickness

scholarly journals Photoluminescence of ion-synthesized 9R-Si inclusions in SiO2/Si structure: Effect of irradiation dose and oxide film thickness

2021 ◽  
Vol 118 (21) ◽  
pp. 212101
Author(s):  
Alena Nikolskaya ◽  
Alexey Belov ◽  
Alexey Mikhaylov ◽  
Anton Konakov ◽  
David Tetelbaum ◽  
...  
Keyword(s):  
Oxide Film ◽  
Film Thickness ◽  
Irradiation Dose ◽  
Structure Effect ◽  
Oxide Film Thickness

Fabrication of Anodic Aluminum Oxide Film on Large-Area Glass Substrate

2007 ◽  
Vol 10 (12) ◽  
pp. C69 ◽  
Author(s):  
Ching-Jung Yang ◽  
Shih-Wei Liang ◽  
Pu-Wei Wu ◽  
Chih Chen ◽  
Jia-Min Shieh
Keyword(s):  
Oxide Film ◽  
Aluminum Oxide ◽  
Glass Substrate ◽  
Anodic Aluminum Oxide ◽  
Large Area ◽  
Anodic Aluminum Oxide Film ◽  
Aluminum Oxide Film ◽  
Anodic Aluminum

Strength and Adhesion of Thin Aluminum Oxide Film Deposited on Iron Surface

1993 ◽  
Vol 115 (4) ◽  
pp. 615-619 ◽  
Author(s):  
M. Nakanishi ◽  
H. Okuya ◽  
K. Nakajima
Keyword(s):  
Oxide Film ◽  
Aluminum Oxide ◽  
Substrate Surface ◽  
Iron Surface ◽  
Indentation Hardness ◽  
Aluminum Oxide Film ◽  
Thin Aluminum ◽  
Atomic Mixing ◽  
Scratch Tests ◽  
Sputter Etching

The strength of deposited film and the adhesion between the film and the substrate were investigated with deposited aluminum oxide film on iron surface by scratching the surface with a diamond cone. Two types of samples were examined, one with oxide film deposited after cleaning the substrate surface by sputter etching, the other with the film deposited without any sputter etching. It was found that a law similar to Meyers’ for indentation hardness holds between the load and scratch width on the sample examined. These results suggest that by analyzing the scratch data the adhesion strength of the film to the substrate can be estimated together with the hardness of the film itself. Analyses by EPMA (electron probe X-ray microanalyzer) and AES (Auger electron spectroscopy) were conducted to correlate the results obtained by the scratch tests and friction experiments, and it was confirmed that (i) adhesion is improved by sputter etching prior to the deposition of the film; (ii) adhesion decreases considerably due to the progress of oxidation in the vicinity of the interface, which depends markedly on the oxygen concentration in the oxide film; and (iii) there is an optimum thickness of the three-component layer (Fe, Al, and O) formed by atomic mixing at the interface for maximizing the adhesion.

Structure of the Ultrathin Aluminum Oxide Film on NiAl(110)

Science ◽  
2005 ◽  
Vol 308 (5727) ◽  
pp. 1440-1442 ◽  
Author(s):  
G. Kresse
Keyword(s):  
Oxide Film ◽  
Aluminum Oxide ◽  
Aluminum Oxide Film

Residual Stress Measurement in Silicon Substrate After Local Thermal Oxidation Using Microscopic Raman Spectroscopy

1991 ◽  
Vol 226 ◽  
Author(s):  
Hideo Miura ◽  
Hiroshi Sakata ◽  
Shinji Sakata Merl
Keyword(s):  
Residual Stress ◽  
Raman Spectroscopy ◽  
Tensile Stress ◽  
Oxide Film ◽  
Film Thickness ◽  
Silicon Dioxide ◽  
Thermal Oxidation ◽  
Silicon Substrate ◽  
Nitride Film ◽  
Oxide Film Thickness

AbstractThe residual stress in silicon substrates after local thermal oxidation is discussed experimentally using microscopic Raman spectroscopy. The stress distribution in the silicon substrate is determined by three main factors: volume expansion of newly grown silicon–dioxide, deflection of the silicon–nitride film used as an oxidation barrier, and mismatch in thermal expansion coefficients between silicon and silicon dioxide.Tensile stress increases with the increase of oxide film thickness near the surface of the silicon substrate under the oxide film without nitride film on it. The tensile stress is sometimes more than 100 MPa. On the other hand, a complicated stress change is observed near the surface of the silicon substrate under the nitride film. The tensile stress increases initially, as it does in the area without nitride film on it. However, it decreases with the increase of oxide film thickness, then the compressive stress increases in the area up to 170 MPa. This stress change is explained by considering the drastic structural change of the oxide film under the nitride film edge during oxidation.

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