scholarly journals CVD diamond substrate for microelectronics. Final report

1996 ◽  
Author(s):  
J. Burden ◽  
R. Gat
Keyword(s):  
Cvd Diamond ◽  
Final Report ◽  
Diamond Substrate

scholarly journals Development of CVD Diamond for Industrial Applications Final Report CRADA No. TC-2047-02

2017 ◽  
Author(s):  
M. Caplan ◽  
R. Olstad ◽  
H. Jory ◽  
A. L. Vikharov
Keyword(s):  
Cvd Diamond ◽  
Industrial Applications ◽  
Final Report

Device Characteristics Dependence on Diamond SDBs Area

2009 ◽  
Vol 615-617 ◽  
pp. 1003-1006 ◽  
Author(s):  
Hitoshi Umezawa ◽  
Kazuhiro Ikeda ◽  
Ramanujam Kumaresan ◽  
Natsuo Tatsumi ◽  
Shinichi Shikata
Keyword(s):  
Leakage Current ◽  
Doping Concentration ◽  
Reverse Bias ◽  
Cvd Diamond ◽  
Density Of Dislocations ◽  
Parasitic Resistance ◽  
Diamond Substrate ◽  
Single Crystal Diamond ◽  
Device Applications ◽  
Device Size

Device size scaling of pseudo-vertical diamond Schottky barrier diodes (SBDs) has been characterized for high-power device applications based on the control of doping concentration and thickness of the p- CVD diamond layer. Decreasing parasitic resistance on the p+ layer utilizing lithography and etching makes possible to get a constant specific on-resistance of less than 20 mOhm-cm2 with increasing device size up to 200 µm. However, the leakage current under low reverse bias conditions is increased markedly. Due to the increase in the leakage current, the reverse operation limit is decreased from 2.4 to 1.3 MV/cm when the device size is increased from 30 to 150 µm. If defects induce an increase in leakage current under the reverse conditions, the density of the defects can be estimated to be 104–105/cm2. This value is 5–10 times larger than the density of dislocations in single crystal diamond substrate.

scholarly journals CVD diamond/substrate interface FIB preparation of cutting tools

2009 ◽  
Vol 15 (S3) ◽  
pp. 57-58 ◽  
Author(s):  
S. B. Peripolli ◽  
F. A. Almeida ◽  
L. S. Gomes ◽  
F. J. Oliveira ◽  
R. F. Silva ◽  
...  
Keyword(s):  
Cutting Tools ◽  
Interfacial Strength ◽  
Cvd Diamond ◽  
Substrate Material ◽  
Detection Sensitivity ◽  
X Ray Diffraction ◽  
X Ray ◽  
Hard Materials ◽  
Diamond Substrate ◽  
Graded Interlayer

AbstractCVD diamond coated cutting tools are used for machining of abrasive and hard materials such as Al-Si alloys and tungsten carbide. The knowledge of the mechanisms governing the diamond/substrate interfacial strength is crucial in cutting tools design. The most adequate substrate material for maximizing the adhesion of diamond films is the silicon nitride (Si3N4) ceramic that possesses a thermal expansion coefficient similar to that of diamond. Buchkremer-Hermanns and co-workers consider the formation of a SiC interlayer between diamond and Si3N4, which may favour chemical bonding to diamond, although they could not detect it by glazing incidence X-Ray diffraction. They believed that insufficient detection sensitivity for very thin films, texture effects or presence of amorphous layers are possible reasons. In the case of TiN substrates, a graded interlayer of amorphous TiCN of only 8 Å was suggested by Contreras, as observed by HRTEM images and EDS measurements. Due to the difficulty in the detection of such layers, which can be in the order of a few angstrons, a definite evidence of their nature is yet to be demonstrated.

Selective Seeding and Growth of Nanocrystalline CVD Diamond on Non-Diamond Substrates

2011 ◽  
Vol 1339 ◽  
Author(s):  
P. Pobedinskas ◽  
S.D. Janssens ◽  
J. Hernando ◽  
P. Wagner ◽  
M. Nesládek ◽  
...  
Keyword(s):  
Aluminum Nitride ◽  
Hydrogen Plasma ◽  
Cvd Diamond ◽  
Nanocrystalline Diamond ◽  
Surface Roughening ◽  
Nucleation Density ◽  
Surface Pretreatment ◽  
Acidic Pretreatment ◽  
Diamond Substrate ◽  
Key Factor

ABSTRACTA study is presented on nanocrystalline diamond (NCD) growth on different substrates, including silicon with and without different metallic interlayers, on aluminum nitride (AlN), and on a Si/AlN-based cantilever. It is shown that non-diamond substrate treatment prior to NCD growth is important for achieving high nucleation densities. AFM measurements reveal that an additional Si surface pretreatment with hydrogen plasma increases the nucleation density by a factor of four. A similar effect was indirectly demonstrated with acidic pretreatment of AlN. In both cases it is believed that the surface roughening is the key factor for explaining this phenomenon.

Selective Metallization of CVD Diamond Films

1992 ◽  
Vol 260 ◽  
Author(s):  
J. M. Calvert ◽  
P. E. Pehrsson ◽  
C. S. Dulcey ◽  
M. C. Peckerar
Keyword(s):  
Ultrathin Films ◽  
Diamond Films ◽  
Peel Test ◽  
Cvd Diamond ◽  
Diamond Surface ◽  
Processing Conditions ◽  
Diamond Substrate ◽  
Low Temperature Processing ◽  
Modified Surfaces ◽  
Oxidized Diamond

ABSTRACTA process has been developed for the deposition of patterned adherent metal on diamond substrates using low temperature processing conditions. CVD diamond films on Si wafers were oxidized with an RFO2 plasma and subsequently functionalized by attachment of self-assembled ultrathin films (UTFs) to the oxidized diamond surface. The UTFs were exposed to patterned deep UV radiation, and selectively metallized by electroless (EL) deposition. EL Ni and Co patterns, with feature sizes to 20 μm linewidth have been produced. Oxidized and UTF-modified surfaces were characterized by surface spectroscopie and wettability techniques. The EL metal deposits on the diamond substrate passed the Scotch tape adhesion peel test.

Thermal Behavior of an AlGaN/GaN-Based Schottky Barrier Diode on Diamond and Silicon Substrates

2021 ◽  
Vol 21 (8) ◽  
pp. 4429-4433
Author(s):  
Zin-Sig Kim ◽  
Hyung-Seok Lee ◽  
Sung-Bum Bae ◽  
Hokyun Ahn ◽  
Sang-Heung Lee ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Schottky Barrier ◽  
High Power ◽  
Large Scale ◽  
Cutoff Frequency ◽  
Cvd Diamond ◽  
High Electron ◽  
Diamond Substrate ◽  
Rf Applications ◽  
Gan On Si

Devices based on AlGaN/GaN heterostructures, for example, Schottky barrier diodes (SBDs) and high electron mobility transistors (HEMTs), have been intensively investigated for applications to high-frequency and high-power areas. Presently, the substrates widely distributed are AlGaN/GaN on SiC for its high performance in radio frequency (RF) applications, for examples high cutoff frequency (fT) or high maximum oscillation frequency (fmax), and AlGaN/GaN on Si for its high power performance, for examples high breakdown voltage or high voltage operation. Chemical vapor deposition (CVD) diamond substrates have a thermal conductivity of 12 W/cm·K, and this is a remarkable point because HEMTs or SBDs on AlGaN/GaN on CVD diamonds are one of the promising alternatives for power and RF applications. In comparison, the thermal conductivity of AlGaN/GaN on a sapphire substrate is 0.33 W/cm·K while that of AlGaN/GaN on a Si substrate is 1.3 W/cm·K and that of AlGaN/GaN on a SiC substrate is 4.9 W/cm·K. In this work, we fabricated SBDs with a 137 mm Schottky channel length on AlGaN/GaN on Si and also on a CVD diamond substrate. We also compared the thermal behaviors of these fabricated large scale SBDs on Si and a CVD diamond substrate.

OBSERVATION OF TWO TYPES OF GROWTH MODES ON (111) FACE IN CVD DIAMOND FILMS

1999 ◽  
Vol 13 (26) ◽  
pp. 947-951 ◽  
Author(s):  
SIJIN HAN ◽  
RONGCHUAN FANG ◽  
YUAN LIAO ◽  
DEFEN LE ◽  
FANQING LI
Keyword(s):  
Direct Evidence ◽  
Diamond Particle ◽  
Chemical Vapor ◽  
Cvd Diamond ◽  
Spiral Growth ◽  
Diamond Growth ◽  
Growth Modes ◽  
Diamond Substrate ◽  
Left And Right ◽  
Classical Crystal

Both spiral growth and terrace flow growth were observed on the vicinal (111) faces of a multiply twinned diamond particle by scanning electron microscopy (SEM). Furthermore, both left- and right-handed spirals were obtained on a fivefold multiply twinned particle. The SEM results provide direct evidence for which two types of growth modes could exist at the same time during the chemical vapor deposition (CVD) diamond growth. It depends strongly on whether there exists a screw dislocation on the underlying diamond substrate for each respective growth on (111) faces. We explained all the features using the classical crystal growth theory of Burton, Cabrera and Frank.

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