Selective Seeding and Growth of Nanocrystalline CVD Diamond on Non-Diamond Substrates

2011 ◽  
Vol 1339 ◽  
Author(s):  
P. Pobedinskas ◽  
S.D. Janssens ◽  
J. Hernando ◽  
P. Wagner ◽  
M. Nesládek ◽  
...  
Keyword(s):  
Aluminum Nitride ◽  
Hydrogen Plasma ◽  
Cvd Diamond ◽  
Nanocrystalline Diamond ◽  
Surface Roughening ◽  
Nucleation Density ◽  
Surface Pretreatment ◽  
Acidic Pretreatment ◽  
Diamond Substrate ◽  
Key Factor

ABSTRACTA study is presented on nanocrystalline diamond (NCD) growth on different substrates, including silicon with and without different metallic interlayers, on aluminum nitride (AlN), and on a Si/AlN-based cantilever. It is shown that non-diamond substrate treatment prior to NCD growth is important for achieving high nucleation densities. AFM measurements reveal that an additional Si surface pretreatment with hydrogen plasma increases the nucleation density by a factor of four. A similar effect was indirectly demonstrated with acidic pretreatment of AlN. In both cases it is believed that the surface roughening is the key factor for explaining this phenomenon.

Electrical and thermal analysis of AlGaN/GaN HEMTs transferred onto diamond substrate through an aluminum nitride layer

2021 ◽  
Author(s):  
Mahmoud Abou Daher ◽  
Marie Lesecq ◽  
Nicolas Defrance ◽  
Etienne Okada ◽  
Bertrand Boudart ◽  
...  
Keyword(s):  
Thermal Analysis ◽  
Aluminum Nitride ◽  
Nitride Layer ◽  
Diamond Substrate ◽  
Gan Hemts

In Situ Auger Spectroscopy Investigation of InP Surfaces Treated in RF Hydrogen and Hydrogen/Methane/Argon Plasmas

1995 ◽  
Vol 386 ◽  
Author(s):  
J. E. Parmeter ◽  
R. J. Shul ◽  
P. A. Miller
Keyword(s):  
Hydrogen Plasma ◽  
Auger Spectroscopy ◽  
Surface Roughening ◽  
Rf Power ◽  
Plasma Exposure ◽  
Argon Plasmas ◽  
Etch Rates ◽  
Phosphorus Depletion ◽  
Oxygen Impurities

ABSTRACTWe have used in situ Auger spectroscopic analysis to investigate the composition of InP surfaces cleaned in rf H2 plasmas and etched in rf H2/CH4/Ar plasmas. In general agreement with previous results, hydrogen plasma treatment is found to remove surface carbon and oxygen impurities but also leads to substantial surface phosphorus depletion if not carefully controlled. Low plasma exposure times and rf power settings minimize both phosphorus depletion and surface roughening. Surfaces etched in H2/CH4/Ar plasmas can show severe phosphorus depletion in high density plasmas leading to etch rates of ∼ 700 Å/min, but this effect is greatly reduced in lower density plasmas that produce etch rates of 30–400 Å/min.

Hydrogen plasma etching mechanism at the a-C:H/a-SiCx:H interface: A key factor for a-C:H adhesion

2018 ◽  
Vol 455 ◽  
pp. 1179-1184 ◽  
Author(s):  
Leonardo M. Leidens ◽  
Ângela E. Crespi ◽  
Carla D. Boeira ◽  
Fernando G. Echeverrigaray ◽  
Carlos A. Figueroa
Keyword(s):  
Plasma Etching ◽  
Hydrogen Plasma ◽  
Etching Mechanism ◽  
Key Factor

Textured CVD diamond films grown on aluminum nitride (AlN) ceramics

1998 ◽  
Vol 334 (1-2) ◽  
pp. 178-181 ◽  
Author(s):  
Naigui Shang ◽  
Rongchuan Fang ◽  
Jingbiao Cui ◽  
Jinqiu Li ◽  
Sijin Han ◽  
...  
Keyword(s):  
Aluminum Nitride ◽  
Diamond Films ◽  
Cvd Diamond

A pretreatment process for enhanced diamond nucleation on smooth silicon substrates coated with hard carbon films

1994 ◽  
Vol 9 (8) ◽  
pp. 2148-2153 ◽  
Author(s):  
Z. Feng ◽  
K. Komvopoulos ◽  
I.G. Brown ◽  
D.B. Bogy
Keyword(s):  
Microwave Plasma ◽  
Hydrogen Plasma ◽  
Carbon Film ◽  
Laser Raman Spectroscopy ◽  
Spherical Particles ◽  
Nucleation Density ◽  
Silicon Substrates ◽  
Pure Hydrogen ◽  
Hard Carbon ◽  
Diamond Nucleation

Diamond nucleation on unscratched silicon substrates coated with thin films of hard carbon was investigated experimentally with a microwave plasma-assisted chemical vapor deposition system. A new pretreatment process was used to enhance the nucleation of diamond. Relatively high diamond nucleation densities of ∼108 cm−2 were achieved by pretreating the carbon-coated silicon substrates with a methane-rich hydrogen plasma at a relatively low temperature for an hour. Scanning electron microscopy and laser Raman spectroscopy studies revealed that diamond nucleation occurred from nanometer-sized spherical particles of amorphous carbon produced during the pretreatment. The nanoparticles possessed a structure different from that of the original hard carbon film, with a broad non-diamond Raman peak centered at ∼1500 cm−1, and a high etching resistance in pure hydrogen plasma. The high diamond nucleation density is attributed to the significant percentage of tetrahedrally bonded (sp3) atomic carbon configurations in the nanoparticles and the presence of sufficient high-surface free-energy sites on the pretreated surfaces.

Enhanced Wettability of Nanocrystalline Diamond Films for Biocoating Applications

2012 ◽  
Vol 1395 ◽  
Author(s):  
Jason H. C. Yang ◽  
Kungen Teii
Keyword(s):  
Contact Angle ◽  
Plasma Treatment ◽  
Oxygen Plasma ◽  
Microwave Plasma ◽  
Hydrogen Plasma ◽  
Film Surface ◽  
Chemical Vapor ◽  
Nanocrystalline Diamond ◽  
Polar Component ◽  
Oxygen Plasma Treatment

ABSTRACTNanocrystalline diamond (NCD) films are prepared from Ar-rich/N2/CH4 and Ar-rich/H2/CH4 mixtures by microwave plasma-enhanced chemical vapor deposition, and further treated by microwave hydrogen and oxygen plasma exposures separately to enhance the wetting property. The hydrogen plasma treatment has small effect on the surface roughness, while the oxygen plasma treatment forms fine protrusions on the film surface. Results show that the wettability of the hydrogen plasma treated NCD film is nearly constant or little improvement as the polar component of the apparent surface free energy is close to the as-deposit NCD film. In contrast, the wettability of the oxygen plasma treated NCD film is improved dramatically such that the contact angle is reduced from 92º and 4.7º to almost 0º for water and 1-bromonaphthalene, respectively, and the polar component increases significantly to 34 mJ/m2. The low contact angle suggests that the film is considerably a cell adhesive friendly surface, which is essential in maintaining multicellular structure, and thus making it a favorable wetting surface for biological and biomedical applications.

CVD Diamond Films Growth on Silicon Nitride Inserts (Si3N4) with High Nucleation Density by Functionalization Seeding

2012 ◽  
Vol 727-728 ◽  
pp. 1433-1438 ◽  
Author(s):  
R.A. Campos ◽  
A. Contin ◽  
Vladimir J. Trava-Airoldi ◽  
J.R. Moro ◽  
D.M. Barquete ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Diamond Film ◽  
Cutting Tools ◽  
Diamond Films ◽  
Base Material ◽  
Cvd Diamond ◽  
Nucleation Density ◽  
Force Microscopy ◽  
Low Thermal Expansion ◽  
Hot Filament

Silicon Nitride is largely used as the base material to manufacture cutting tools. Due to its low thermal expansion coefficient it is ideal candidate for CVD diamond deposition. In this work, we functionalized the surface of silicon nitride inserts (Si3N4) with a polymer (PDDA Poly (diallyldimethylamonium chloride - Mw 40000)) to promote seeding with nanodiamond particles. The seeding was performed in water slurry containing 4 nm diamond particles dispersed by PSS Poly (sodium4-styrenesulfonate) polymer. CVD diamond films, with high nucleation density, were deposited in a hot filament reactor. Film morphology was characterized by Atomic Force Microscopy (AFM) and Scanning Electron Microscopy (SEM). Diamond film quality was determined by Raman Spectroscopy. CVD diamond film adherence was evaluated using Rockwell C indentation.

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