Selective Metallization of CVD Diamond Films

MRS Proceedings ◽

10.1557/proc-260-905 ◽

1992 ◽

Vol 260 ◽

Cited By ~ 4

Author(s):

J. M. Calvert ◽

P. E. Pehrsson ◽

C. S. Dulcey ◽

M. C. Peckerar

Keyword(s):

Ultrathin Films ◽

Diamond Films ◽

Peel Test ◽

Cvd Diamond ◽

Diamond Surface ◽

Processing Conditions ◽

Diamond Substrate ◽

Low Temperature Processing ◽

Modified Surfaces ◽

Oxidized Diamond

ABSTRACTA process has been developed for the deposition of patterned adherent metal on diamond substrates using low temperature processing conditions. CVD diamond films on Si wafers were oxidized with an RFO2 plasma and subsequently functionalized by attachment of self-assembled ultrathin films (UTFs) to the oxidized diamond surface. The UTFs were exposed to patterned deep UV radiation, and selectively metallized by electroless (EL) deposition. EL Ni and Co patterns, with feature sizes to 20 μm linewidth have been produced. Oxidized and UTF-modified surfaces were characterized by surface spectroscopie and wettability techniques. The EL metal deposits on the diamond substrate passed the Scotch tape adhesion peel test.

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New Aspect on CVD Diamond Films. Diamond Surface Acoustic Wave Filter.

Journal of The Surface Finishing Society of Japan ◽

10.4139/sfj.50.500 ◽

1999 ◽

Vol 50 (6) ◽

pp. 500-504

Author(s):

Shinichi SHIKATA

Keyword(s):

Acoustic Wave ◽

Surface Acoustic Wave ◽

Diamond Films ◽

Cvd Diamond ◽

Diamond Surface ◽

Wave Filter

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Temperature dependence of stress in CVD diamond films studied by Raman spectroscopy

Materials Science-Poland ◽

10.1515/msp-2015-0064 ◽

2015 ◽

Vol 33 (3) ◽

pp. 620-626 ◽

Cited By ~ 2

Author(s):

Anna Dychalska ◽

Kazimierz Fabisiak ◽

Kazimierz Paprocki ◽

Alina Dudkowiak ◽

Mirosław Szybowicz

Keyword(s):

Residual Stress ◽

Thermal Stress ◽

Temperature Dependence ◽

Stress Component ◽

Diamond Films ◽

Chemical Vapor ◽

Cvd Diamond ◽

Intrinsic Stress ◽

Diamond Surface ◽

Raman Shift

Abstract Evolution of residual stress and its components with increasing temperature in chemical vapor deposited (CVD) diamond films has a crucial impact on their high temperature applications. In this work we investigated temperature dependence of stress in CVD diamond film deposited on Si(100) substrate in the temperature range of 30 °C to 480 °C by Raman mapping measurement. Raman shift of the characteristic diamond band peaked at 1332 cm-1 was studied to evaluate the residual stress distribution at the diamond surface. A new approach was applied to calculate thermal stress evolution with increasing temperature by using two commonly known equations. Comparison of the residts obtained from the two methods was presented. The intrinsic stress component was calculated from the difference between average values of residual and thermal stress and then its temperature dependence was discussed.

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Adhesion of Polymers to Synthetic Diamond Films

MRS Proceedings ◽

10.1557/proc-383-403 ◽

1995 ◽

Vol 383 ◽

Author(s):

Earl W. Stromberg ◽

Michael D. Drory

Keyword(s):

Contact Angle ◽

Synthetic Diamond ◽

Diamond Films ◽

Cvd Diamond ◽

The Other ◽

Diamond Surface ◽

Coupling Agents ◽

Preliminary Study ◽

Better Than

ABSTRACTA preliminary study of the adhesion of polymers to diamond substrates was conducted by examining the wetting characteristics of coupling agents to diamond. The contact angle between several commercial liquid coupling agents and a CVD diamond surface was measured. A silane, Z-6026, was found to wet the diamond surface. Several other coupling agents, including a titanate and an organometallic blend, wet the diamond surface significantly better than most of the other materials in this survey. It was found that water did not wet the diamond.

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Interfacial Properties Between CVD Diamond and Titanium

International Journal of Modern Physics B ◽

10.1142/s0217979203018624 ◽

2003 ◽

Vol 17 (08n09) ◽

pp. 1127-1133 ◽

Cited By ~ 5

Author(s):

Sung Hyun Baek ◽

Damian F. Mihec ◽

James B. Metson

Keyword(s):

Diamond Films ◽

Depth Profiling ◽

Cvd Diamond ◽

Diamond Formation ◽

Depth Profiles ◽

Interfacial Surface ◽

Diamond Substrate ◽

Outermost Surface ◽

Oxygen Ratio

The role of carbide and oxy-carbide films in the adhesion of diamond films on commercial pure Ti metal, and a Ti, 6%Al, 4%V substrates was examined. It was found that the carbon to oxygen ratio in an oxy-carbide structure formed at the interface broadly correlates with the adhesive strength of the diamond/substrate bond. Deposition experiments with substrates including titanium and its alloys, suggest the nature of the substrate is important in aiding carbide and subsequently, diamond formation. XPS depth profiling for Ti-6Al-4V indicates that the mode of TiC formation on pure Ti and Ti-6Al-4V is significantly different because of the segregation of aluminium. This contributes to a change of TiC stoichiometry and morphology. SIMS depth profiles also show that the interfacial surface on Ti-6Al-4V contains several percent of aluminium and nitrogen, both at the outermost surface and in the interior of the interfacial layer. The aluminium is enriched at the surface as compared with the bulk concentration.

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Effect of Nitrogen on the Growth of (100)-, (110)-, and (111)-Oriented Diamond Films

Applied Sciences ◽

10.3390/app11010126 ◽

2020 ◽

Vol 11 (1) ◽

pp. 126

Author(s):

Jen-Chuan Tung ◽

Tsung-Che Li ◽

Yen-Jui Teseng ◽

Po-Liang Liu

Keyword(s):

Growth Mechanism ◽

Density Functional ◽

Film Growth ◽

Hydrogen Abstraction ◽

Diamond Films ◽

Activation Energies ◽

Diamond Surface ◽

Nitrogen Doped ◽

Nitrogen Substitution ◽

Diamond Film Growth

The aim of this research is the study of hydrogen abstraction reactions and methyl adsorption reactions on the surfaces of (100), (110), and (111) oriented nitrogen-doped diamond through first-principles density-functional calculations. The three steps of the growth mechanism for diamond thin films are hydrogen abstraction from the diamond surface, methyl adsorption on the diamond surface, and hydrogen abstraction from the methylated diamond surface. The activation energies for hydrogen abstraction from the surface of nitrogen-undoped and nitrogen-doped diamond (111) films were −0.64 and −2.95 eV, respectively. The results revealed that nitrogen substitution was beneficial for hydrogen abstraction and the subsequent adsorption of methyl molecules on the diamond (111) surface. The adsorption energy for methyl molecules on the diamond surface was generated during the growth of (100)-, (110)-, and (111)-oriented diamond films. Compared with nitrogen-doped diamond (100) films, adsorption energies for methyl molecule adsorption were by 0.14 and 0.69 eV higher for diamond (111) and (110) films, respectively. Moreover, compared with methylated diamond (100), the activation energies for hydrogen abstraction were by 0.36 and 1.25 eV higher from the surfaces of diamond (111) and (110), respectively. Growth mechanism simulations confirmed that nitrogen-doped diamond (100) films were preferred, which was in agreement with the experimental and theoretical observations of diamond film growth.

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Kinetic Monte Carlo Simulation of Diamond Film Growth with the Inclusion of Surface Migration

MRS Proceedings ◽

10.1557/proc-527-383 ◽

1998 ◽

Vol 527 ◽

Cited By ~ 3

Author(s):

Armando Netto ◽

Michael Frenklach

Keyword(s):

Monte Carlo ◽

Monte Carlo Simulations ◽

Film Growth ◽

Kinetic Monte Carlo ◽

Diamond Films ◽

State Theory ◽

Diamond Surface ◽

Diamond Growth ◽

Gaseous Species ◽

Surface Migration

ABSTRACTDiamond films are of interest in many practical applications but the technology of producing high-quality, low-cost diamond is still lacking. To reach this goal, it is necessary to understand the mechanism underlying diamond deposition. Most reaction models advanced thus far do not consider surface diffusion, but recent theoretical results, founded on quantum-mechanical calculations and localized kinetic analysis, highlight the critical role that surface migration may play in growth of diamond films. In this paper we report a three-dimensional time-dependent Monte Carlo simulations of diamond growth which consider adsorption, desorption, lattice incorporation, and surface migration. The reaction mechanism includes seven gas-surface, four surface migration, and two surface-only reaction steps. The reaction probabilities are founded on the results of quantum-chemical and transition-state-theory calculations. The kinetic Monte Carlo simulations show that, starting with an ideal {100}-(2×1) reconstructed diamond surface, the model is able to produce a continuous film growth. The smoothness of the growing film and the developing morphology are shown to be influenced by rate parameter values and by deposition conditions such as temperature and gaseous species concentrations.

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PTIS investigation of hydrogenated CVD diamond films

phys stat sol (a) ◽

10.1002/pssa.200561919 ◽

2005 ◽

Vol 202 (11) ◽

pp. 2171-2176 ◽

Cited By ~ 1

Author(s):

A. Hikavyy ◽

P. Clauws ◽

W. Deferme ◽

G. Bogdan ◽

K. Haenen ◽

...

Keyword(s):

Diamond Films ◽

Cvd Diamond

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Enhanced Tribological Performance of CVD Diamond Films Enabled by Using Graphene Layers as Solid Lubricant

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.1136.573 ◽

2016 ◽

Vol 1136 ◽

pp. 573-578 ◽

Cited By ~ 2

Author(s):

Su Lin Chen ◽

Bin Shen ◽

Fang Hong Sun

Keyword(s):

Tungsten Carbide ◽

Solid Lubricant ◽

Diamond Films ◽

Cvd Diamond ◽

Tribological Performance ◽

Chemical Vapor Deposition Method ◽

Dry Sliding ◽

Graphene Layers ◽

Sliding Interface ◽

Graphene Flakes

The present study reports the influence of graphene layers on the tribological performance of CVD diamond films when they are used as the solid lubricants. Friction tests are conducted on a ball-on-plate friction tester, where the stainless steel is used as the counterpart material. The CVD diamond film sample is a typical microcrystalline diamond (MCD) coating which is deposited on a flat tungsten carbide substrate using the hot filament chemical vapor deposition method (HFCVD). Besides the MCD sample, a polished MCD film (pMCD) and a polished tungsten carbide (pWC) are also adopted in frictional tests, aiming at illustrating the influence of the surface morphology, as well as the physical property, of the sample on the lubricative effect of graphene layers. The experimental results show that graphene layers can effectively reduce the coefficient of friction (COF), regardless of the samples. The MCD sample presents the lowest stable COF, which is 0.13, in dry sliding period when the graphene flakes are sparyed on the sliding interface; while the pMCD and pWC samples exhibit slightly higher COFs, which are 0.16 and 0.18, respectively. Comparatively, the COFs of these three samples obtained in dry sliding process without graphene are 0.20, 0.25 and 0.64. In additon, the MCD sample exhibits a much longer stable dry slidng process which is more than 5000 cycles. Comparatively, the other two tribo-pairs only exhibit a stable low-COF dry sliding period for around 2000 cycles. The reduction of COF could be attributed to the graphene flakes adhered on the sliding interface. It forms a layer of solid lubricative film with extremely low shear strength and significantly decreases the interactions between two contacted surfaces. The rugged surface of the MCD film provides sufficient clogging locations for graphene flakes, which allows the generated lubricative film enduring a long sliding duration. It can be arrived from this study that the tribological properties of the MCD film could be enhanced by simply adoping graphene layers as a solid lubricant. Furthermore, an improved performance of a variety of MCD coated cutting tools or mechanical components could be expected when they are utilized with graphene layers.

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