scholarly journals GA2O3: A NEW CLASS OF RADIATION DETECTOR MATERIAL

2021 ◽  
Author(s):  
RALPH JAMES
Keyword(s):  
Radiation Detector ◽  
New Class ◽  
Detector Material

HgS: a rugged, stable semiconductor radiation detector material

2009 ◽  
Author(s):  
Michael R. Squillante ◽  
William M. Higgins ◽  
Hadong Kim ◽  
Leonard Cirignano ◽  
Guido Ciampi ◽  
...  
Keyword(s):  
Radiation Detector ◽  
Detector Material

Cadmium zinc telluride and its use as a nuclear radiation detector material

2001 ◽  
Vol 32 (4-5) ◽  
pp. 103-189 ◽  
Author(s):  
T.E Schlesinger ◽  
J.E Toney ◽  
H Yoon ◽  
E.Y Lee ◽  
B.A Brunett ◽  
...  
Keyword(s):  
Cadmium Zinc Telluride ◽  
Radiation Detector ◽  
Zinc Telluride ◽  
Nuclear Radiation ◽  
Nuclear Radiation Detector ◽  
Cadmium Zinc ◽  
Detector Material

scholarly journals Detection of fast neutrons from D–T nuclear reaction using a 4H–SiC radiation detector

2016 ◽  
Vol 44 ◽  
pp. 1660235 ◽  
Author(s):  
Bohumir Zatko ◽  
Andrea Sagatova ◽  
Katarina Sedlackova ◽  
Vladimir Necas ◽  
Frantisek Dubecky ◽  
...  
Keyword(s):  
Nuclear Reaction ◽  
Epitaxial Layer ◽  
Elevated Temperatures ◽  
Detection Efficiency ◽  
Radiation Detector ◽  
Schottky Contact ◽  
Wide Band ◽  
Fast Neutrons ◽  
Hydrogen Atoms ◽  
Detector Material

The particle detector based on a high purity epitaxial layer of 4H–SiC exhibits promising properties in detection of various types of ionizing radiation. Due to the wide band gap of 4H–SiC semiconductor material, the detector can reliably operate at room and also elevated temperatures. In this work we focused on detection of fast neutrons generated the by D–T (deuterium–tritium) nuclear reaction. The epitaxial layer with a thickness of 105 [Formula: see text]m was used as a detection part. A circular Schottky contact of a Au/Ni double layer was evaporated on both sides of the detector material. The detector structure was characterized by current-voltage and capacitance-voltage measurements, at first. The results show very low current density (<0.1 nA/cm[Formula: see text] at room temperature and good homogeneity of free carrier concentration in the investigated depth. The fabricated detectors were tested for detection of fast neutrons generated by the D–T reaction. The energies of detected fast neutrons varied from 16.0 MeV to 18.3 MeV according to the acceleration potential of deuterons, which increased from 600 kV up to 2 MV. Detection of fast neutrons in the SiC detector is caused by the elastic and inelastic scattering on the silicon or carbide component of the detector material. Another possibility that increases the detection efficiency is the use of a conversion layer. In our measurements, we glued a HDPE (high density polyethylene) conversion layer on the detector Schottky contact to transform fast neutrons to protons. Hydrogen atoms contained in the conversion layer have a high probability of interaction with neutrons through elastic scattering. Secondary generated protons flying to the detector can be easily detected. The detection properties of detectors with and without the HDPE conversion layer were compared.

Extracting Trap Parameters From Picts Spectra In Cadmium Zinc Telluride Radiation Detector Material

1997 ◽  
Vol 487 ◽  
Author(s):  
J. E. Toney ◽  
B. A. Brunett ◽  
T. E. Schlesinger ◽  
R. B. James
Keyword(s):  
Regularization Method ◽  
Electroless Deposition ◽  
Cadmium Zinc Telluride ◽  
Radiation Detector ◽  
Zinc Telluride ◽  
Small Component ◽  
Infrared Excitation ◽  
Electron And Hole Traps ◽  
Cadmium Zinc ◽  
Detector Material

AbstractWe demonstrate that the regularization method due to Weese can resolve closely-spaced peaks in PICTS spectra for cadmium zinc telluride. We also show that electron and hole traps can be distinguished from each other by the bias dependence of the spectrum when using an excitation source that is primarily infrared but which contains a small component of visible light. Lastly we show that there are qualitative differences between PICTS spectra taken with infrared excitation and those taken with visible excitation. We attribute the surface-related levels to diffusion into the detector material of gold from electroless deposition of contacts.

Silicon carbide and its use as a radiation detector material

2008 ◽  
Vol 19 (10) ◽  
pp. 102001 ◽  
Author(s):  
F Nava ◽  
G Bertuccio ◽  
A Cavallini ◽  
E Vittone
Keyword(s):  
Silicon Carbide ◽  
Radiation Detector ◽  
Detector Material

In Situ microscopy of the anodic etching of silicon

1995 ◽  
Vol 53 ◽  
pp. 232-233
Author(s):  
Frances M. Ross ◽  
Peter C. Searson
Keyword(s):  
Composite Structures ◽  
High Surface ◽  
High Surface Area ◽  
Chemical Properties ◽  
Selective Etching ◽  
Silicon On Insulator ◽  
Second Phase ◽  
Porous Layers ◽  
New Class ◽  
Porous Semiconductors

Porous semiconductors represent a relatively new class of materials formed by the selective etching of a single or polycrystalline substrate. Although porous silicon has received considerable attention due to its novel optical properties1, porous layers can be formed in other semiconductors such as GaAs and GaP. These materials are characterised by very high surface area and by electrical, optical and chemical properties that may differ considerably from bulk. The properties depend on the pore morphology, which can be controlled by adjusting the processing conditions and the dopant concentration. A number of novel structures can be fabricated using selective etching. For example, self-supporting membranes can be made by growing pores through a wafer, films with modulated pore structure can be fabricated by varying the applied potential during growth, composite structures can be prepared by depositing a second phase into the pores and silicon-on-insulator structures can be formed by oxidising a buried porous layer. In all these applications the ability to grow nanostructures controllably is critical.

The microtubule associated protein (MAP) tau forms a new class of triple-stranded left-hand helical fibrous protein polymer

1992 ◽  
Vol 50 (1) ◽  
pp. 540-541
Author(s):  
G. C. Ruben ◽  
K. Iqbal ◽  
I. Grundke-Iqbal ◽  
H. Wisniewski ◽  
T. L. Ciardelli ◽  
...  
Keyword(s):  
Axial Ratio ◽  
Normal Structure ◽  
Paired Helical Filaments ◽  
Left Hand ◽  
New Class ◽  
Protein Polymer ◽  
Fibrous Protein ◽  
Protein Map ◽  
Neurotransmitter Transport ◽  
Alzheimer Neurofibrillary Tangles

In neurons, the microtubule associated protein, tau, is found in the axons. Tau stabilizes the microtubules required for neurotransmitter transport to the axonal terminal. Since tau has been found in both Alzheimer neurofibrillary tangles (NFT) and in paired helical filaments (PHF), the study of tau's normal structure had to preceed TEM studies of NFT and PHF. The structure of tau was first studied by ultracentrifugation. This work suggested that it was a rod shaped molecule with an axial ratio of 20:1. More recently, paraciystals of phosphorylated and nonphosphoiylated tau have been reported. Phosphorylated tau was 90-95 nm in length and 3-6 nm in diameter where as nonphosphorylated tau was 69-75 nm in length. A shorter length of 30 nm was reported for undamaged tau indicating that it is an extremely flexible molecule. Tau was also studied in relation to microtubules, and its length was found to be 56.1±14.1 nm.

Study of segregation in La1.8Sr0.2CuO4 superconductor by STEM-EDS microanalysis

1987 ◽  
Vol 45 ◽  
pp. 54-55
Author(s):  
T. F. Kelly ◽  
P. J. Lee ◽  
E. E. Hellstrom ◽  
D. C. Larbalestier
Keyword(s):  
Rare Earth ◽  
High Field ◽  
Transport Current ◽  
Total Thickness ◽  
New Class ◽  
Ceramic Superconductors ◽  
Current Densities ◽  
Group Ii ◽  
Eds Microanalysis

Recently there has been much excitement over a new class of high Tc (>30 K) ceramic superconductors of the form A1-xBxCuO4-x, where A is a rare earth and B is from Group II. Unfortunately these materials have only been able to support small transport current densities 1-10 A/cm2. It is very desirable to increase these values by 2 to 3 orders of magnitude for useful high field applications. The reason for these small transport currents is as yet unknown. Evidence has, however, been presented for superconducting clusters on a 50-100 nm scale and on a 1-3 μm scale. We therefore planned a detailed TEM and STEM microanalysis study in order to see whether any evidence for the clusters could be seen.A La1.8Sr0.2Cu04 pellet was cut into 1 mm thick slices from which 3 mm discs were cut. The discs were subsequently mechanically ground to 100 μm total thickness and dimpled to 20 μm thickness at the center.

Electronic structure studies of conducting polymers by electron energy-loss spectroscopy

1996 ◽  
Vol 54 ◽  
pp. 160-161
Author(s):  
J. Fink
Keyword(s):  
Electronic Structure ◽  
Conducting Polymers ◽  
Conjugated Polymers ◽  
Electron Acceptors ◽  
Electron Donors ◽  
Light Emitting ◽  
One Dimensional ◽  
New Class ◽  
Electrical Conductivities ◽  
Electron Energy Loss

Conducting polymers comprises a new class of materials achieving electrical conductivities which rival those of the best metals. The parent compounds (conjugated polymers) are quasi-one-dimensional semiconductors. These polymers can be doped by electron acceptors or electron donors. The prototype of these materials is polyacetylene (PA). There are various other conjugated polymers such as polyparaphenylene, polyphenylenevinylene, polypoyrrole or polythiophene. The doped systems, i.e. the conducting polymers, have intersting potential technological applications such as replacement of conventional metals in electronic shielding and antistatic equipment, rechargable batteries, and flexible light emitting diodes.Although these systems have been investigated almost 20 years, the electronic structure of the doped metallic systems is not clear and even the reason for the gap in undoped semiconducting systems is under discussion.

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