HgS: a rugged, stable semiconductor radiation detector material

Perspectives on mercuric iodide as a radiation detector material for space measurements

Conference on the High Energy Radiation Background in Space. Workshop Record ◽

10.1109/cherbs.1997.660256 ◽

2002 ◽

Author(s):

A.M. Gerrish ◽

L. Van Den Berg

Keyword(s):

Radiation Detector ◽

Mercuric Iodide ◽

Detector Material

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GA2O3: A NEW CLASS OF RADIATION DETECTOR MATERIAL

10.2172/1828524 ◽

2021 ◽

Author(s):

RALPH JAMES

Keyword(s):

Radiation Detector ◽

New Class ◽

Detector Material

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Cadmium zinc telluride and its use as a nuclear radiation detector material

Materials Science and Engineering R Reports ◽

10.1016/s0927-796x(01)00027-4 ◽

2001 ◽

Vol 32 (4-5) ◽

pp. 103-189 ◽

Cited By ~ 611

Author(s):

T.E Schlesinger ◽

J.E Toney ◽

H Yoon ◽

E.Y Lee ◽

B.A Brunett ◽

...

Keyword(s):

Cadmium Zinc Telluride ◽

Radiation Detector ◽

Zinc Telluride ◽

Nuclear Radiation ◽

Nuclear Radiation Detector ◽

Cadmium Zinc ◽

Detector Material

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Detection of fast neutrons from D–T nuclear reaction using a 4H–SiC radiation detector

International Journal of Modern Physics Conference Series ◽

10.1142/s2010194516602350 ◽

2016 ◽

Vol 44 ◽

pp. 1660235 ◽

Cited By ~ 2

Author(s):

Bohumir Zatko ◽

Andrea Sagatova ◽

Katarina Sedlackova ◽

Vladimir Necas ◽

Frantisek Dubecky ◽

...

Keyword(s):

Nuclear Reaction ◽

Epitaxial Layer ◽

Elevated Temperatures ◽

Detection Efficiency ◽

Radiation Detector ◽

Schottky Contact ◽

Wide Band ◽

Fast Neutrons ◽

Hydrogen Atoms ◽

Detector Material

The particle detector based on a high purity epitaxial layer of 4H–SiC exhibits promising properties in detection of various types of ionizing radiation. Due to the wide band gap of 4H–SiC semiconductor material, the detector can reliably operate at room and also elevated temperatures. In this work we focused on detection of fast neutrons generated the by D–T (deuterium–tritium) nuclear reaction. The epitaxial layer with a thickness of 105 [Formula: see text]m was used as a detection part. A circular Schottky contact of a Au/Ni double layer was evaporated on both sides of the detector material. The detector structure was characterized by current-voltage and capacitance-voltage measurements, at first. The results show very low current density (<0.1 nA/cm[Formula: see text] at room temperature and good homogeneity of free carrier concentration in the investigated depth. The fabricated detectors were tested for detection of fast neutrons generated by the D–T reaction. The energies of detected fast neutrons varied from 16.0 MeV to 18.3 MeV according to the acceleration potential of deuterons, which increased from 600 kV up to 2 MV. Detection of fast neutrons in the SiC detector is caused by the elastic and inelastic scattering on the silicon or carbide component of the detector material. Another possibility that increases the detection efficiency is the use of a conversion layer. In our measurements, we glued a HDPE (high density polyethylene) conversion layer on the detector Schottky contact to transform fast neutrons to protons. Hydrogen atoms contained in the conversion layer have a high probability of interaction with neutrons through elastic scattering. Secondary generated protons flying to the detector can be easily detected. The detection properties of detectors with and without the HDPE conversion layer were compared.

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Extracting Trap Parameters From Picts Spectra In Cadmium Zinc Telluride Radiation Detector Material

MRS Proceedings ◽

10.1557/proc-487-109 ◽

1997 ◽

Vol 487 ◽

Author(s):

J. E. Toney ◽

B. A. Brunett ◽

T. E. Schlesinger ◽

R. B. James

Keyword(s):

Regularization Method ◽

Electroless Deposition ◽

Cadmium Zinc Telluride ◽

Radiation Detector ◽

Zinc Telluride ◽

Small Component ◽

Infrared Excitation ◽

Electron And Hole Traps ◽

Cadmium Zinc ◽

Detector Material

AbstractWe demonstrate that the regularization method due to Weese can resolve closely-spaced peaks in PICTS spectra for cadmium zinc telluride. We also show that electron and hole traps can be distinguished from each other by the bias dependence of the spectrum when using an excitation source that is primarily infrared but which contains a small component of visible light. Lastly we show that there are qualitative differences between PICTS spectra taken with infrared excitation and those taken with visible excitation. We attribute the surface-related levels to diffusion into the detector material of gold from electroless deposition of contacts.

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