Perspectives on mercuric iodide as a radiation detector material for space measurements

2002 ◽  
Author(s):  
A.M. Gerrish ◽  
L. Van Den Berg
Keyword(s):  
Radiation Detector ◽  
Mercuric Iodide ◽  
Detector Material

HgS: a rugged, stable semiconductor radiation detector material

2009 ◽  
Author(s):  
Michael R. Squillante ◽  
William M. Higgins ◽  
Hadong Kim ◽  
Leonard Cirignano ◽  
Guido Ciampi ◽  
...  
Keyword(s):  
Radiation Detector ◽  
Detector Material

Cadmium zinc telluride and its use as a nuclear radiation detector material

2001 ◽  
Vol 32 (4-5) ◽  
pp. 103-189 ◽  
Author(s):  
T.E Schlesinger ◽  
J.E Toney ◽  
H Yoon ◽  
E.Y Lee ◽  
B.A Brunett ◽  
...  
Keyword(s):  
Cadmium Zinc Telluride ◽  
Radiation Detector ◽  
Zinc Telluride ◽  
Nuclear Radiation ◽  
Nuclear Radiation Detector ◽  
Cadmium Zinc ◽  
Detector Material

Towards Imaging with Polycrystalline Mercuric Iodide Semiconductor Detectors

1997 ◽  
Vol 487 ◽  
Author(s):  
M. Schieber ◽  
A. Zuck ◽  
M. Braiman ◽  
L. Melekhov ◽  
J. Nissenbaum ◽  
...  
Keyword(s):  
Vapor Deposition ◽  
Screen Printing ◽  
Radiation Detector ◽  
Nuclear Radiation ◽  
Semiconductor Detectors ◽  
Pixel Detector ◽  
Mercuric Iodide ◽  
X Ray Diffraction ◽  
Large Area ◽  
X Ray

AbstractPreparation of polycrystalline mercuric iodide very thin (1 μm) films using laser ablation and thick films (100–600μm), using hot pressing, hot wall vapor deposition and screen printing methods, fabricated as radiation detector plates are briefly described. X-ray diffraction, photoluminescence and optical microscopic measurements as well as response to nuclear radiation will be given. Finally, recent results obtained with a large area imaging pixel detector will be shown.

scholarly journals Detection of fast neutrons from D–T nuclear reaction using a 4H–SiC radiation detector

2016 ◽  
Vol 44 ◽  
pp. 1660235 ◽  
Author(s):  
Bohumir Zatko ◽  
Andrea Sagatova ◽  
Katarina Sedlackova ◽  
Vladimir Necas ◽  
Frantisek Dubecky ◽  
...  
Keyword(s):  
Nuclear Reaction ◽  
Epitaxial Layer ◽  
Elevated Temperatures ◽  
Detection Efficiency ◽  
Radiation Detector ◽  
Schottky Contact ◽  
Wide Band ◽  
Fast Neutrons ◽  
Hydrogen Atoms ◽  
Detector Material

The particle detector based on a high purity epitaxial layer of 4H–SiC exhibits promising properties in detection of various types of ionizing radiation. Due to the wide band gap of 4H–SiC semiconductor material, the detector can reliably operate at room and also elevated temperatures. In this work we focused on detection of fast neutrons generated the by D–T (deuterium–tritium) nuclear reaction. The epitaxial layer with a thickness of 105 [Formula: see text]m was used as a detection part. A circular Schottky contact of a Au/Ni double layer was evaporated on both sides of the detector material. The detector structure was characterized by current-voltage and capacitance-voltage measurements, at first. The results show very low current density (<0.1 nA/cm[Formula: see text] at room temperature and good homogeneity of free carrier concentration in the investigated depth. The fabricated detectors were tested for detection of fast neutrons generated by the D–T reaction. The energies of detected fast neutrons varied from 16.0 MeV to 18.3 MeV according to the acceleration potential of deuterons, which increased from 600 kV up to 2 MV. Detection of fast neutrons in the SiC detector is caused by the elastic and inelastic scattering on the silicon or carbide component of the detector material. Another possibility that increases the detection efficiency is the use of a conversion layer. In our measurements, we glued a HDPE (high density polyethylene) conversion layer on the detector Schottky contact to transform fast neutrons to protons. Hydrogen atoms contained in the conversion layer have a high probability of interaction with neutrons through elastic scattering. Secondary generated protons flying to the detector can be easily detected. The detection properties of detectors with and without the HDPE conversion layer were compared.

Effects of Plastic Deformation on Charge Transport in Mercuric Iodide Radiation Detectors

1991 ◽  
Vol 226 ◽  
Author(s):  
J. Marschall ◽  
F. Milstein ◽  
G. Georgeson ◽  
V. Gerrish
Keyword(s):  
Plastic Deformation ◽  
Plastic Strain ◽  
Charge Transport ◽  
Electronic Properties ◽  
Dark Current ◽  
Radiation Detector ◽  
Radiation Detectors ◽  
Mercuric Iodide ◽  
Plastic Damage ◽  
Creep Loading

AbstractThe effects of bulk plastic deformation of mercuric iodide (HgI2), upon electronic properties which are relevant to the performance of HgI2 as a radiation detector, were examined experimentally. Hole lifetimes, as well as hole and electron mobilities, were measured at various stages of sample deformation. Hole lifetimes decreased by a factor of 2 under strains of several percent; carrier mobilities did not change significantly, except during creep loading where electron and hole mobilities decreased by about 65% and 25%, respectively. Additionally, dark current measurements were made on specimens with varying degrees of accumulated plastic strain; dark current values did not strongly reflect the extent of plastic damage in deformed specimens.

Electrical properties of radiation detector based on polycrystalline mercuric iodide (HgI 2 ) thick film

2008 ◽  
Author(s):  
Weimin Shi ◽  
Yaoming Zheng ◽  
Yuying Guo ◽  
Yu Zhang ◽  
Huan Xu ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Thick Film ◽  
Radiation Detector ◽  
Mercuric Iodide

Extracting Trap Parameters From Picts Spectra In Cadmium Zinc Telluride Radiation Detector Material

1997 ◽  
Vol 487 ◽  
Author(s):  
J. E. Toney ◽  
B. A. Brunett ◽  
T. E. Schlesinger ◽  
R. B. James
Keyword(s):  
Regularization Method ◽  
Electroless Deposition ◽  
Cadmium Zinc Telluride ◽  
Radiation Detector ◽  
Zinc Telluride ◽  
Small Component ◽  
Infrared Excitation ◽  
Electron And Hole Traps ◽  
Cadmium Zinc ◽  
Detector Material

AbstractWe demonstrate that the regularization method due to Weese can resolve closely-spaced peaks in PICTS spectra for cadmium zinc telluride. We also show that electron and hole traps can be distinguished from each other by the bias dependence of the spectrum when using an excitation source that is primarily infrared but which contains a small component of visible light. Lastly we show that there are qualitative differences between PICTS spectra taken with infrared excitation and those taken with visible excitation. We attribute the surface-related levels to diffusion into the detector material of gold from electroless deposition of contacts.

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