scholarly journals Atomic Scale Simulations of Arsenic Ion Implantation and Annealing in Silicon

1995 ◽  
Vol 396 ◽  
Author(s):  
M.-J. Caturla ◽  
T. Díaz de la Rubia ◽  
M. Jaraiz ◽  
G.H. Gilmer
Keyword(s):  
Ion Implantation ◽  
Low Temperatures ◽  
Kinetic Monte Carlo ◽  
Atomic Scale ◽  
Multiple Time ◽  
Multiple Time Scale ◽  
Primary State ◽  
Defect Diffusion ◽  
Dose Accumulation ◽  
Mc Simulation

AbstractWe present results of multiple-time-scale simulations of 5, 10 and 15 keV low temperature ion implantation of arsenic on silicon (100), followed by high temperature anneals. The simulations start with a molecular dynamics (MD) calculation of the primary state of damage after l0ps. The results are then coupled to a kinetic Monte Carlo (MC) simulation of bulk defect diffusion and clustering. Dose accumulation is achieved considering that at low temperatures the damage produced in the lattice is stable. After the desired dose is accumulated, the system is annealed at 800 °C for several seconds. The results provide information on the evolution for the damage microstructure over macroscopic length and time scales and affords direct comparison to experimental results. We discuss the database of inputs to the MC model and how it affects the diffusion process.

Ion implantation and depletion in germanium at low temperatures

1979 ◽  
Vol 19 (2) ◽  
pp. 185-189
Author(s):  
S.A. El-Atawy ◽  
P.E. Clegg ◽  
D.W. Palmer
Keyword(s):  
Ion Implantation ◽  
Low Temperatures

scholarly journals Porous Characteristics of Three-Dimensional Disordered Graphene Networks

Crystals ◽  
2021 ◽  
Vol 11 (2) ◽  
pp. 127
Author(s):  
YongChao Wang ◽  
YinBo Zhu ◽  
HengAn Wu
Keyword(s):  
Pore Size ◽  
Low Temperatures ◽  
Gas Adsorption ◽  
Three Dimensional ◽  
Md Simulations ◽  
Structural Features ◽  
Atomic Scale ◽  
Critical Factors ◽  
Chlorination Process ◽  
Porous Morphology

The porous characteristics of disordered carbons are critical factors to their performance on hydrogen storage and electrochemical capacitors. Even though the porous information can be estimated indirectly by gas adsorption experiments, it is still hard to directly characterize the porous morphology considering the complex 3D connectivity. To this end, we construct full-atom disordered graphene networks (DGNs) by mimicking the chlorination process of carbide-derived carbons using annealing-MD simulations, which could model the structure of disordered carbons at the atomic scale. The porous characteristics, including pore volume, pore size distribution (PSD), and specific surface area (SSA), were then computed from the coordinates of carbon atoms. From the evolution of structural features, pores grow dramatically during the formation of polyaromatic fragments and sequent disordered framework. Then structure is further graphitized while the PSD shows little change. For the obtained DGNs, the porosity, pore size, and SSA increase with decreasing density. Furthermore, SSA tends to saturate in the low-density range. The DGNs annealed at low temperatures exhibit larger SSA than high-temperature DGNs because of the abundant free edges.

Parametric instabifity of transverse and Langmuir waves in a plasma

1975 ◽  
Vol 13 (2) ◽  
pp. 317-326 ◽  
Author(s):  
Kai Fong Lee
Keyword(s):  
Growth Rate ◽  
Electromagnetic Field ◽  
Kinetic Model ◽  
Multiple Time ◽  
Multiple Time Scale ◽  
Threshold Intensity ◽  
Langmuir Waves ◽  
Scale Perturbation ◽  
The Subject ◽  
Parametric Instabilities

The parametric excitation of transverse and Langmuir waves by an externally-driven electromagnetic field of frequency (ω0 > 2ωp) in a warm and collisional plasma is studied, using the fluid equations. By an application of the multiple- time-scale perturbation method, the threshold intensity and the growth rate above threshold are obtained. The results are compared with those of Goldman (1969) and Prasad (1968), both of whom worked with a kinetic model.The theory of parametric instabilities in plasmas has been the subject of numerous investigations in recent years. Broadly speaking, the instabilities can be grouped into two categories: those for which the excited waves are purely electrostatic (see e.g. DuBois & Goldman 1965, 1967; Silin 1965; Lee & Su 1966; Jackson 1967; Nishikawa 1968; Kaw & Dawson 1969; Tzoar 1969; Sanmartin 1970; McBride 1970; Perkins & Flick 1971; Fejer & Leer 1972a, b; Bezzerides & Weinstock 1972; DuBois & Goldman 1972), and those for which one of the excited waves is electromagnetic (see e.g. Goldman & Dubois 1965; Montgomery & Alexeff 1966; Chen & Lewak 1970; Bodner & Eddleman 1972; Fejer & Leer 1972b; Lee & Kaw 1972; Forslund et al. 1972).

scholarly journals Atomic Migration Studies with X-Ray Photon Correlation Spectroscopy

2014 ◽  
Vol 2 ◽  
pp. 73-94 ◽  
Author(s):  
Markus Stana ◽  
Manuel Ross ◽  
Bogdan Sepiol
Keyword(s):  
Low Temperatures ◽  
Short Range ◽  
Short Range Order ◽  
Photon Correlation Spectroscopy ◽  
Condensed Matter ◽  
Correlation Spectroscopy ◽  
Atomic Scale ◽  
Photon Correlation ◽  
X Ray ◽  
Amorphous Systems

The new technique of atomic-scale X-ray Photon Correlation Spectroscopy (aXPCS) makesuse of a coherent X-ray beam to study the dynamics of various processes in condensed matter systems.Particularly atomistic migration mechanisms are still far from being understood in most of intermetallicalloys and in amorphous systems. Special emphasis must be given to the opportunity to measureatomistic diffusion at relatively low temperatures where such measurements were far out of reach withpreviously established methods. The importance of short-range order is demonstrated on the basis ofMonte Carlo simulations.

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