scholarly journals High accuracy die mechanical stress measurement with the ATC04 Assembly Test Chip

Author(s):  
J.N. Sweet ◽  
D.W. Peterson
1990 ◽  
Vol 181 ◽  
Author(s):  
Bharat Bhushan ◽  
S.P. Murarka

ABSTRACTUsing an in-situ stress measurement technique that measures stress as a function of annealing temperature, instabilities in mechanical stress induced by heat treatment in a variety of doped/undoped SiO2 films deposited by APCVD, LPCVD and PECVD techniques have been investigated. A large hysteresis in mechanical stress, caused by first heat treatment to which the as-deposited films are subjected, has been observed in films deposited by APCVD/LPCVD techniques. No such hysteresis is obsesrved in films deposited by PECVD technique. Hysteresis in APCVD/LPCVD films is found to vanish once the films are heat treated at or above 800°C. The results are discussed in terms of oxide densification, the presence of hydrogenous species, and phosphorous.


1997 ◽  
Vol 113 (11) ◽  
pp. 825-831 ◽  
Author(s):  
Yuzo OBARA ◽  
Keita IMAI ◽  
Naoaki NAKAMURA ◽  
Katsuhiko SUGAWARA

2014 ◽  
Vol 87 ◽  
pp. 124-127 ◽  
Author(s):  
Alexander Aman ◽  
Soeren Majcherek ◽  
Marc-Peter Schmidt ◽  
Soeren Hirsch

2006 ◽  
Vol 969 ◽  
Author(s):  
Soeren Hirsch ◽  
Bertram Schmidt

Abstractthis paper reports on a method for estimation and minimization of mechanical stress on MEMS sensor and actuator structures due to packaging processes based on flip chip technology. For studying mechanical stress a test chip with silicon membranes was fabricated. Finite element method simulation was calculate the stress profile and to determine the optimum positions for placing the resistor network.


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