scholarly journals ANALYSIS OF SERIES RESISTANCE AND INTERFACE STATE DENSITIES OF Ru/Ti/n-InP SCHOTTKY DIODE.

2016 ◽  
Vol 4 (6) ◽  
pp. 747-752
Author(s):  
TLakshmi Narasappa ◽  
◽  
S Farooq ◽  
YMunikrishna Reddy ◽  
◽  
...  
Keyword(s):  
Schottky Diode ◽  
Series Resistance ◽  
Interface State ◽  
State Densities

Detection of Interfaces States Correlated with Layer-by-Layer Oxidation on Si(100)

1999 ◽  
Vol 592 ◽  
Author(s):  
T. Hattori ◽  
H. Nohira ◽  
Y Teramoto ◽  
N. Watanabe
Keyword(s):  
Surface Roughness ◽  
Oxide Film ◽  
Film Thickness ◽  
Interface State ◽  
State Density ◽  
Layer By Layer ◽  
Oxide Film Thickness ◽  
Maximum Value ◽  
State Densities ◽  
Atomically Flat

ABSTRACTThe interface state densities near the midgap were measured with the progress of oxidation of atomically flat Si(100) surface. It was found that the interface state distribution in Si bandgap changes periodically with the progress of oxidation. Namely, the interface-state density near the midgap of Si exhibits drastic decrease at oxide film thickness where the surface roughness of oxide film takes its minimum value, while that does not exhibit decrease at the oxide film thickness where the surface roughness takes its maximum value. In order to minimize interface state densities the oxide film thickness should be precisely controlled to within an accuracy of 0.02 nm.

A quantitative model for the bipolar amplification effect: A new method to determine semiconductor/oxide interface state densities

2021 ◽  
Vol 130 (13) ◽  
pp. 134501
Author(s):  
James P. Ashton ◽  
Stephen J. Moxim ◽  
Ashton D. Purcell ◽  
Patrick M. Lenahan ◽  
Jason T. Ryan
Keyword(s):  
Interface State ◽  
Quantitative Model ◽  
New Method ◽  
Oxide Interface ◽  
Amplification Effect ◽  
State Densities ◽  
Bipolar Amplification

Low interface state densities at Al2O3/GaN interfaces formed on vicinal polar and non-polar surfaces

2020 ◽  
Vol 117 (10) ◽  
pp. 102102 ◽  
Author(s):  
Yuto Ando ◽  
Kentaro Nagamatsu ◽  
Manato Deki ◽  
Noriyuki Taoka ◽  
Atsushi Tanaka ◽  
...  
Keyword(s):  
Interface State ◽  
Polar Surfaces ◽  
State Densities

scholarly journals Full Energy Spectra of Interface State Densities for n ‐ and p ‐type MoS 2 Field‐Effect Transistors

2019 ◽  
Vol 29 (49) ◽  
pp. 1904465 ◽  
Author(s):  
Nan Fang ◽  
Satoshi Toyoda ◽  
Takashi Taniguchi ◽  
Kenji Watanabe ◽  
Kosuke Nagashio
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Interface State ◽  
Energy Spectra ◽  
Full Energy ◽  
State Densities ◽  
P Type

Investigation of Si/4H-SiC Hetero-Junction Growth and Electrical Properties

2009 ◽  
Vol 615-617 ◽  
pp. 443-446 ◽  
Author(s):  
Owen J. Guy ◽  
Amador Pérez-Tomás ◽  
Michael R. Jennings ◽  
Michal Lodzinski ◽  
A. Castaing ◽  
...  
Keyword(s):  
Molecular Beam ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Physical Nature ◽  
Interface State ◽  
Electron Beam Evaporation ◽  
Layer Transfer ◽  
Mos Devices ◽  
State Densities ◽  
Scanning Electron

This paper describes the growth and characterisation of Si/SiC heterojunction structures. Heterojunction structures are of interest for low on-resistance diodes and as potential solutions to fabricating SiC MOS devices with lower interface state densities. The formation of the Si/SiC heterojunction using Chemical Vapour Deposition (CVD), Molecular Beam Epitaxy (MBE), Electron Beam Evaporation under UHV conditions (EBE-UHV) and Layer Transfer (LT) are reported. The physical nature of Si/SiC structures has been investigated using scanning electron microscopy (SEM). Results of electrical characterisation of the Si/SiC heterojunctions, are also reported. Finally, thermal oxidation of a Si / SiC heterojunction structures has been performed. The C(V) characteristics of the resulting oxides are compared to conventional thermal oxides on SiC.

Low- and High-Frequency C–V Characteristics of Au/n-GaN/n-GaAs

2018 ◽  
Vol 18 (06) ◽  
pp. 1850039
Author(s):  
Abderrezzaq Ziane ◽  
Mohamed Amrani ◽  
Abdelaziz Rabehi ◽  
Zineb Benamara
Keyword(s):  
Schottky Diode ◽  
High Frequency ◽  
High Vacuum ◽  
Low Frequency ◽  
Interface State ◽  
Interface States ◽  
State Density ◽  
Ultra High Vacuum ◽  
Active Nitrogen ◽  
Capacitance Voltage

Au/GaN/GaAs Schottky diode created by the nitridation of n-GaAs substrate which was exposed to a flow of active nitrogen created by a discharge source with high voltage in ultra-high vacuum with two different thicknesses of GaN layers (0.7[Formula: see text]nm and 2.2[Formula: see text]nm), the I–V and capacitance–voltage (C–V) characteristics of the Au/n-GaN/n-GaAs structures were studied for low- and high-frequency at room temperature. The measurements of I–V of the Au/n-GaN/n-GaAs Schottky diode were found to be strongly dependent on bias voltage and nitridation process. The electrical parameters are bound by the thickness of the GaN layer. The capacitance curves depict a behavior indicating the presence of interface state density, especially in the low frequency. The interface states density was calculated using the high- and low-frequency capacitance curves and it has been shown that the interface states density decreases with increasing of nitridation of the GaAs.

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