Effect of illumination and frequency dependent series resistance and interface state densities on the electrical properties of DNA-CTMA/p-GaN bio-hybrid Schottky photodiode

2017 ◽  
Vol 59 ◽  
pp. 107-112 ◽  
Author(s):  
M. Siva Pratap Reddy ◽  
P.T. Puneetha ◽  
Young-Woong Lee ◽  
Seong-Hoon Jeong ◽  
Chinho Park
Keyword(s):  
Electrical Properties ◽  
Series Resistance ◽  
Interface State ◽  
Frequency Dependent ◽  
Dependent Series ◽  
State Densities ◽  
Schottky Photodiode

On the profile of frequency dependent series resistance and surface states in Au/Bi4Ti3O12/SiO2/n-Si(MFIS) structures

2008 ◽  
Vol 85 (1) ◽  
pp. 81-88 ◽  
Author(s):  
F. Parlaktürk ◽  
Ş. Altındal ◽  
A. Tataroğlu ◽  
M. Parlak ◽  
A. Agasiev
Keyword(s):  
Series Resistance ◽  
Surface States ◽  
Frequency Dependent ◽  
Dependent Series

Analysis of frequency-dependent series resistance and interface states of In/SiO2/p-Si (MIS) structures

2007 ◽  
Vol 400 (1-2) ◽  
pp. 149-154 ◽  
Author(s):  
A. Birkan Selçuk ◽  
N. Tuğluoğlu ◽  
S. Karadeniz ◽  
S. Bilge Ocak
Keyword(s):  
Series Resistance ◽  
Interface States ◽  
Frequency Dependent ◽  
Dependent Series ◽  
Mis Structures

scholarly journals Electrical properties and the determination of interface state density from I-V, C-f and G-f measurements in Ir/Ru/n-InGaN Schottky barrier diode

2017 ◽  
Vol 51 (12) ◽  
pp. 1698
Author(s):  
R. Padma ◽  
V. Rajagopal Reddy
Keyword(s):  
Electrical Properties ◽  
Barrier Height ◽  
Series Resistance ◽  
Forward Bias ◽  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
Current Voltage ◽  
Density Of Interface States

The electrical properties of the Ir/Ru Schottky contacts on n-InGaN have been investigated by current-voltage (I-V), capacitance-voltage (C-V), capacitance-frequency (C-f) and conductance-frequency (G-f) measurements. The obtained mean barrier height and ideality factor from I-V are 0.61 eV and 1.89. The built-in potential, doping concentration and barrier height values are also estimated from the C-V measurements and the corresponding values are 0.62 V, 1.20x1017 cm-3 and 0.79 eV, respectively. The interface state density (NSS) obtained from forward bias I-V characteristics by considering the series resistance (RS) values are lower without considering the series resistance (RS). Furthermore, the interface state density (NSS) and relaxation time (tau) are also calculated from the experimental C-f and G-f measurements. The NSS values obtained from the I-V characteristics are almost three orders higher than the NSS values obtained from the C-f and G-f measurements. The experimental results depict that NSS and tau are decreased with bias voltage. The frequency dependence of the series resistance (RS) is attributed to the particular distribution density of interface states. DOI: 10.21883/FTP.2017.12.45189.8340

scholarly journals ANALYSIS OF SERIES RESISTANCE AND INTERFACE STATE DENSITIES OF Ru/Ti/n-InP SCHOTTKY DIODE.

2016 ◽  
Vol 4 (6) ◽  
pp. 747-752
Author(s):  
TLakshmi Narasappa ◽  
◽  
S Farooq ◽  
YMunikrishna Reddy ◽  
◽  
...  
Keyword(s):  
Schottky Diode ◽  
Series Resistance ◽  
Interface State ◽  
State Densities
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