scholarly journals Effect of deposition conditions and buffer layers on amorphous or polytype phase formation in Al2O3 thin films by chemical vapor deposition using tri-methyl aluminum

2019 ◽  
Vol 127 (6) ◽  
pp. 443-450
Author(s):  
Chunfu LIN ◽  
Takashi TANAKA ◽  
Akio NISHIYAMA ◽  
Tadashi SHIOTA ◽  
Osamu SAKURAI ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Phase Formation ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Buffer Layers ◽  
Deposition Conditions

Nanostructural and Optical Features of nc-Si:H Thin Films Prepared by Plasma Enhanced Chemical Vapor Deposition Techniques

2006 ◽  
Vol 510-511 ◽  
pp. 962-965
Author(s):  
Jae Hyun Shim ◽  
Nam Hee Cho ◽  
Y.J. Kim ◽  
Chin Myung Whang ◽  
Won Seung Cho ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Flow Rate ◽  
Vapor Deposition ◽  
Gas Flow ◽  
Amorphous Matrix ◽  
Chemical Vapor ◽  
Nanocrystalline Silicon ◽  
Silicon Nanocrystallites ◽  
Deposition Conditions

The nanostructural and optical features of hydrogenated nanocrystalline silicon (nc-Si:H) thin films, which were prepared by plasma enhanced chemical vapor deposition (PECVD), were investigated as a function of deposition conditions. It was found that the crystallite size varied with the relative fraction of Si-H3 bonds in the films, [ ] eger n n n H Si H Si int 3 1 3 / ] [ = = ∑ − − , which was sensitively related with the flow rate of SiH4 reaction gas. The silicon nanocrystallites in the films enlarged from ~2.0 to ~8.0 nm in their size with increasing gas flow rate, while the PL emission energy varied from 2.5 to 1.8 eV; the relative fractions of the Si-H3, Si-H2, and Si-H bonds in the amorphous matrix were also varied sensitively with the SiH4 flow rate. A model for the nanostructure of the nc-Si:H films was suggested to discribe the variations in the size and chemical bonds of the nanocrystallites as well as the amorphous matrix depending on the deposition conditions.

{10} edge dislocations in YSZ films grown on (100)MgO by PLD

1994 ◽  
Vol 52 ◽  
pp. 530-531
Author(s):  
Jason R. Heffelfinger ◽  
C. Barry Carter
Keyword(s):  
Thin Films ◽  
Semiconductor Lasers ◽  
Vapor Deposition ◽  
Substrate Surface ◽  
Laser System ◽  
Average Energy ◽  
Target Material ◽  
Chemical Vapor ◽  
Buffer Layers ◽  
Organic Chemical

Yttria-stabilized zirconia (YSZ) is currently used in a variety of applications including oxygen sensors, fuel cells, coatings for semiconductor lasers, and buffer layers for high-temperature superconducting films. Thin films of YSZ have been grown by metal-organic chemical vapor deposition, electrochemical vapor deposition, pulse-laser deposition (PLD), electron-beam evaporation, and sputtering. In this investigation, PLD was used to grow thin films of YSZ on (100) MgO substrates. This system proves to be an interesting example of relationships between interfaces and extrinsic dislocations in thin films of YSZ.In this experiment, a freshly cleaved (100) MgO substrate surface was prepared for deposition by cleaving a lmm-thick slice from a single-crystal MgO cube. The YSZ target material which contained 10mol% yttria was prepared from powders and sintered to 85% of theoretical density. The laser system used for the depositions was a Lambda Physik 210i excimer laser operating with KrF (λ=248nm, 1Hz repetition rate, average energy per pulse of 100mJ).

High Band Gap Nanocrystalline Tungsten Carbide (nc-WC) Thin Films Grown by Hot Wire Chemical Vapor Deposition (HW-CVD) Method

2018 ◽  
Vol 10 (3) ◽  
pp. 03001-1-03001-6 ◽  
Author(s):  
Bharat Gabhale ◽  
◽  
Ashok Jadhawar ◽  
Ajinkya Bhorde ◽  
Shruthi Nair ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Tungsten Carbide ◽  
Band Gap ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Hot Wire ◽  
Cvd Method ◽  
High Band

NITROGEN INCORPORATED HYDROGENATED AMORPHOUS CARBON THIN FILMS DEPOSITED BY MICROWAVE SURFACE-WAVE PLASMA CHEMICAL VAPOR DEPOSITION

2009 ◽  
Vol 23 (09) ◽  
pp. 2159-2165 ◽  
Author(s):  
SUDIP ADHIKARI ◽  
MASAYOSHI UMENO
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Surface Wave ◽  
Amorphous Carbon ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Plasma Chemical ◽  
Hydrogenated Amorphous Carbon ◽  
Plasma Chemical Vapor Deposition ◽  
Hydrogenated Amorphous

Nitrogen incorporated hydrogenated amorphous carbon (a-C:N:H) thin films have been deposited by microwave surface-wave plasma chemical vapor deposition on silicon and quartz substrates, using helium, methane and nitrogen ( N 2) as plasma source. The deposited a-C:N:H films were characterized by their optical, structural and electrical properties through UV/VIS/NIR spectroscopy, Raman spectroscopy, atomic force microscope and current-voltage characteristics. The optical band gap decreased gently from 3.0 eV to 2.5 eV with increasing N 2 concentration in the films. The a-C:N:H film shows significantly higher electrical conductivity compared to that of N 2-free a-C:H film.

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