Improvement in ferroelectric properties of SrBi2Ta2O9 thin films with Bi2O3 buffer layers by liquid-delivery metalorganic chemical-vapor deposition

2001 ◽  
Vol 79 (10) ◽  
pp. 1519-1521 ◽  
Author(s):  
Woong-Chul Shin ◽  
Soon-Gil Yoon
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Ferroelectric Properties ◽  
Chemical Vapor ◽  
Buffer Layers ◽  
Metalorganic Chemical ◽  
Liquid Delivery

Microstructures of La1−xAx(A = Ca or Sr)MnO3−δ thin films by liquid-delivery metalorganic chemical vapor deposition

2001 ◽  
Vol 16 (11) ◽  
pp. 3073-3083 ◽  
Author(s):  
Y. Xin ◽  
K. Han ◽  
N. Mateeva ◽  
H. Garmestani ◽  
P. N. Kalu ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Substrate Interface ◽  
Columnar Grains ◽  
Film Substrate ◽  
Metalorganic Chemical ◽  
Liquid Delivery

The microstructure of La1–xAx(A = Ca or Sr)MnO3–δ thin films grown by liquid-delivery metalorganic chemical vapor deposition on (001) MgO and (110)pseudo-cubic LaAlO3 were studied by transmission electron microscopy. The La1–xCaxMnO3–δ thin film on large lattice mismatched MgO exhibited very defective microstructures and consisted of two typical regions. The first region was close to the film–substrate interface and had an epitaxial relationship to the substrate with many differently oriented domains nucleated on the substrate surface. The second region consisted of columnar grains with some degree of texture. In contrast, the smaller lattice-mismatched La1–xSrxMnO3–δ/(110)pseudo-cubic LaAlO3 film had good crystalline quality with highly oriented columnar grains but exhibited complicated dislocation structures. Apart from the misfit dislocations formed at the film–substrate interface, two types of anomalous dislocations with limited contribution to relieving misfit stresses were also observed. One type of dislocation had extra planes in the film and some climbed into the substrate. These dislocations were considered to form from dislocation loops during nucleation of the film. The other type of dislocations had extra planes parallel to the film–substrate interface and glided into the substrate side resulting in a 2° tilt of the film with respect to the substrate. The complicated dislocation configurations present in the sample were related to the complex strain field in the film. The relative strains along the interface measured in the film were heterogeneous. The variations of the strains in the film were related to the local Curie temperature changes and second-order phase transitions of the film.

Ferroelectric Properties of a-Axis Textured BaTiO3 Thin Films

1993 ◽  
Vol 310 ◽  
Author(s):  
H. A. Lu ◽  
L. A. Wills ◽  
B. W. Wessels ◽  
X. Zhan ◽  
J. A. Helfrich ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Dielectric Properties ◽  
Electric Field ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Ferroelectric Properties ◽  
Chemical Vapor ◽  
Ferroelectric Hysteresis ◽  
Metalorganic Chemical

AbstractFerroelectric and dielectric properties were measured for BaTiO3 thin films prepared by metalorganic chemical vapor deposition which were highly a-axis textured. No ferroelectric hysteresis was observed from the as-deposited BaTiO3 films on Pt coated MgO. Upon applying an electric field exceeding a threshold electric field, Et, ∼ 50 - 100 kV/cm, a ferroelectric hysteresis was observed. A spontaneous polarization Ps ≥ 15 μC/cm2 was measured for the textured films.

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