High-quality ZnS thin-film growth for flat-panel displays

1996 ◽  
Vol 4 (4) ◽  
pp. 325 ◽  
Author(s):  
W. Tong ◽  
T. K. Tran ◽  
W. Park ◽  
S. Schön ◽  
B. K. Wagner ◽  
...  
Keyword(s):  
Thin Film ◽  
Film Growth ◽  
Thin Film Growth ◽  
Flat Panel Displays ◽  
Flat Panel ◽  
High Quality

Concentration of atomic oxygen in low earth orbit and in the laboratory for use in high quality oxide thin film growth

1998 ◽  
Author(s):  
J. A. Schultz ◽  
K. Eipers-Smith ◽  
K. Waters ◽  
S. Schultz ◽  
M. Sterling ◽  
...  
Keyword(s):  
Thin Film ◽  
Atomic Oxygen ◽  
Film Growth ◽  
Low Earth Orbit ◽  
Thin Film Growth ◽  
Oxide Thin Film ◽  
Earth Orbit ◽  
High Quality

scholarly journals High quality superconducting titanium nitride thin film growth using infrared pulsed laser deposition

2018 ◽  
Vol 31 (5) ◽  
pp. 055017 ◽  
Author(s):  
A Torgovkin ◽  
S Chaudhuri ◽  
A Ruhtinas ◽  
M Lahtinen ◽  
T Sajavaara ◽  
...  
Keyword(s):  
Thin Film ◽  
Titanium Nitride ◽  
Pulsed Laser Deposition ◽  
Film Growth ◽  
Pulsed Laser ◽  
Thin Film Growth ◽  
Laser Deposition ◽  
High Quality

scholarly journals Thin film growth of MAX phases as functional materials

2021 ◽  
Author(s):  
Abhijit Biswas ◽  
Varun Natu ◽  
Anand B Puthirath
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Film Growth ◽  
Functional Materials ◽  
Thin Film Growth ◽  
Max Phase ◽  
Synthesis Methods ◽  
High Quality ◽  
Max Phases ◽  
Wide Range

Abstract Layered nanolaminate ternary carbides, nitrides and carbonitrides with general formula Mn+1 AXn or MAX (n = 1, 2, or 3, M is an early transition metal, A is mostly group 13 or 14 element, and X is C and/or N) has revolutionized the world of nanomaterials, due to the coexistence of both ceramic and metallic nature, giving rise to exceptional mechanical, thermal, electrical, chemical properties and wide range of applications. Although several solid-state bulk synthesis methods have been developed to produce a variety of MAX phases, however, for certain applications, the growth of MAX phases, especially in its high-quality epitaxial thin films form is of increasing interest. Here, we summarize the progress made thus far in epitaxial growth and property evaluation of MAX phase thin films grown by various deposition techniques. We also address the important future research directions to be made in terms of thin-film growth. Overall, in the future, high-quality single-phase epitaxial thin film growth and engineering of chemically diverse MAX phases may open up interesting new avenues for next-generation technology.

High Quality CdS Thin Film Growth by Avoiding Anomalies in Chemical Bath Deposition for Large Area Thin Film Solar Cell Application

2015 ◽  
Vol 15 (11) ◽  
pp. 9240-9245 ◽  
Author(s):  
Yulisa Yusoff ◽  
Puvaneswaran Chelvanathan ◽  
Qamar Huda ◽  
Md. Akhtaruzzaman ◽  
Mohammad M. Alam ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cell ◽  
Chemical Bath Deposition ◽  
Thin Film Solar Cell ◽  
Film Growth ◽  
Thin Film Growth ◽  
Large Area ◽  
High Quality ◽  
Solar Cell Application ◽  
Cds Thin Film

Growth of La2−x SrxCuO4 and La2CuO4+δ thin films by Reactive Coevaporation

1997 ◽  
Vol 502 ◽  
Author(s):  
H. Sato ◽  
H. Yamamoto ◽  
M. Naito
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Ultrathin Films ◽  
Film Growth ◽  
Lattice Mismatch ◽  
Compressive Strain ◽  
Thin Film Growth ◽  
Strain Effect ◽  
High Quality ◽  
Substrate Dependence

ABSTRACTThin films of La2−xSrxCuO4 (LSCO) and La2CuO4+δ (LCO) were grown by reactive coevaporation. We obtained LSCO thin films on (001) LaSrA104 (LSAO) substrates with Tc(R=0) = 44 K, which is higher than that for bulk samples. A structural analysis indicates that the increase in Tc is due to compressive strain generated by the lattice mismatch. A similar strain effect is suggested from the substrate dependence of Tc for superconducting LCO thin films, for which Tc(R=0) reached 50 K on (001) LSAO substrates. We also succeeded in obtaining high-quality LSCO ultrathin films without any buffer or cap layers on (001) LSAO substrates, but not on substrates of other materials with the larger lattice mismatch with LSCO. These results demonstrate that the lattice mismatch with the substrates is important in thin-film growth of LSCO and LCO.

Amorphous Silicon Alloy Technology For Active Matrix Displays

1986 ◽  
Vol 70 ◽  
Author(s):  
Z. Yaniv ◽  
V. Cannella ◽  
Y. Baron ◽  
A. Lien ◽  
J. McGill
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Gate Dielectric ◽  
Flat Panel Displays ◽  
Large Area ◽  
Flat Panel ◽  
High Quality ◽  
Active Matrix ◽  
Silicon Alloy ◽  
Metal Insulator Metal

ABSTRACTThin film semiconductor devices have been investigated over the past twenty years for application in large area flat panel displays. The development of thin film transistors and diodes based on amorphous silicon (a-Si) alloy materials has made the application of these devices, to display technologies, very attractive. More recently, manufacturing techniques to produce high quality large area films of amorphous silicon alloys have been demonstrated for photovoltaic applications.Most of the current research and development effort on active matrix liquid crystal displays (LCDs) has concentrated on a-Si alloy TFTs. The success of TFT based displays for large area flat panel displays has been limited so far, mainly due to the difficulty of obtaining a high quality gate dielectric by plasma deposition and due to the presence of crossing conductors on the same substrate, both increasing the probability of defects in the display. When a two terminal sandwich device is used, on the other hand, no gate dielectric is required, hence, a higher yield can be expected. Metal-insulator-metal and hydrogenated amorphous silicon alloy devices have been proposed for incorporation in LCDs. Performance requirements for a useful active matrix switching element and a comparison among the different a-Si alloy thin film devices used for this purpose will be reviewed.

scholarly journals Thin film growth of heavy fermion chiral magnet YbNi3Al9

2021 ◽  
Vol 118 (10) ◽  
pp. 102402
Author(s):  
Hiroaki Shishido ◽  
Akira Okumura ◽  
Tatsuya Saimyoji ◽  
Shota Nakamura ◽  
Shigeo Ohara ◽  
...  
Keyword(s):  
Thin Film ◽  
Heavy Fermion ◽  
Film Growth ◽  
Thin Film Growth
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