28.4: Characterization of Negative Electron Affinity for MgO Film by Ultraviolet Photoelectron Spectroscopy

2010 ◽  
Vol 41 (1) ◽  
pp. 408
Author(s):  
Il-Shin Choi ◽  
Yong-Jun Kim ◽  
Eun-Gi Heo
Keyword(s):  
Electron Affinity ◽  
Photoelectron Spectroscopy ◽  
Ultraviolet Photoelectron Spectroscopy ◽  
Negative Electron Affinity

Negative electron affinity of the GaN photocathode: a review on the basic theory, structure design, fabrication, and performance characterization.

2021 ◽  
Vol 9 (38) ◽  
pp. 13013-13040
Author(s):  
Xiaohui Wang ◽  
Mengbo Wang ◽  
Yulong Liao ◽  
Lifeng Yang ◽  
Qipei Ban ◽  
...  
Keyword(s):  
Electron Affinity ◽  
Structure Design ◽  
Basic Theory ◽  
Negative Electron Affinity ◽  
Performance Characterization ◽  
Comprehensive Review ◽  
Theory Structure ◽  
And Performance

A comprehensive review is provided on the basic theory, structure design, fabrication, and performance characterization of the NEA GaN photocathode.

Field Emission Mechanism of H-Terminated N-Type Diamond NEA Surface

2012 ◽  
Vol 1395 ◽  
Author(s):  
Takatoshi Yamada ◽  
Masataka Hasegawa ◽  
Hisato Yamaguchi ◽  
Yuki Kudo ◽  
Ken Okano ◽  
...  
Keyword(s):  
Electron Affinity ◽  
Electron Emission ◽  
Photoelectron Spectroscopy ◽  
Ultra Violet ◽  
Field Electron Emission ◽  
Emission Model ◽  
Negative Electron Affinity ◽  
Surface Field ◽  
Internal Barrier ◽  
Field Electron

ABSTRACTField electron emission model of hydrogen-terminated n-type diamond was discussed. Ultra-violet photoelectron spectroscopy characterizations indicated that the electron affinity was -0.7 eV and an internal barrier of about 3.5 eV existed on the surface. Field electron emission properties depended on anode-diamond distances. Schottky barrier lowering model suggested that this internal barrier was lowered by the electric field (5.4x106 V/cm) applied onto the negative electron affinity surface of the H-terminated n-type diamond.

scholarly journals A calculational and ultraviolet photoelectron spectroscopic study of distorted amides

1998 ◽  
Vol 76 (6) ◽  
pp. 672-677 ◽  
Author(s):  
N H Werstiuk ◽  
H M Muchall ◽  
C D Roy ◽  
J Ma ◽  
R S Brown
Keyword(s):  
Photoelectron Spectroscopy ◽  
Molecular Orbitals ◽  
Ultraviolet Photoelectron Spectroscopy ◽  
Excellent Correlation ◽  
Model Compounds ◽  
Ionization Energies ◽  
Highest Occupied Molecular Orbitals ◽  
Equilibrium Geometries ◽  
Good Agreement

Distorted amides 3,4-dihydro-2-oxo-1,4-ethanoquinoline (1a), 3,4-dihydro-2-oxo-1,4-propanoquinoline (1b), 3,3,4,5-tetrahydro-2-oxo-1,5-ethanobenzazepine (1c), and 3,3,4,5-tetrahydro-2-oxo-1,5-propanobenzazepine (1d) and the model compounds 2,N-dimethyl-acetanilide (2a), 2,N,N-trimethylaniline (3), and benzoquinuclidine (4) have been studied calculationally and with He(I) ultraviolet photoelectron spectroscopy. We find good agreement between experimentally obtained ionization energies for 1b, 1c, 1d, 2a, 3, and 4 and values calculated with HAM/3 using the equilibrium geometries obtained at the HF/6-31G** level of theory. An excellent correlation between experimental ionization energies and orbital energies from Becke3LYP/6-31+G* calculations led to the characterization of the highest occupied molecular orbitals for these compounds and for 1a, whose photoelectron spectrum could not be obtained due to its reactivity in the solid state.Key words: distorted amides, He(I) photoelectron spectroscopy, Becke3LYP, molecular orbitals.

Growth and Characterization of Epitaxial Graphene on SiC Induced by Carbon Evaporation

2010 ◽  
Vol 645-648 ◽  
pp. 593-596
Author(s):  
Ameer Al-Temimy ◽  
Christian Riedl ◽  
Ulrich Starke
Keyword(s):  
Photoelectron Spectroscopy ◽  
Epitaxial Graphene ◽  
Low Energy ◽  
Ultraviolet Photoelectron Spectroscopy ◽  
Force Microscopy ◽  
Low Energy Electron Diffraction ◽  
Atomic Force ◽  
Graphene Lattice ◽  
Low Energy Electron

By carbon evaporation under ultrahigh vacuum (UHV) conditions, epitaxial graphene can be grown on SiC(0001) at significantly lower temperatures than with conventional Si sublimation. Therefore, the degradation of the initial SiC surface morphology can be avoided. The layers of graphene are characterized by low energy electron diffraction (LEED), angle resolved ultraviolet photoelectron spectroscopy (ARUPS), and atomic force microscopy (AFM). On SiC the graphene lattice is rotated by 30o in comparison to preparation by annealing in UHV alone.

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