ChemInform Abstract: CHARACTERIZATION OF FERRABORANES BY ULTRAVIOLET PHOTOELECTRON SPECTROSCOPY

1978 ◽  
Vol 9 (18) ◽  
Author(s):  
J. A. ULMAN ◽  
E. L. ANDERSEN ◽  
T. P. FEHLNER
Keyword(s):  
Photoelectron Spectroscopy ◽  
Ultraviolet Photoelectron Spectroscopy ◽  
Abstract Characterization

scholarly journals A calculational and ultraviolet photoelectron spectroscopic study of distorted amides

1998 ◽  
Vol 76 (6) ◽  
pp. 672-677 ◽  
Author(s):  
N H Werstiuk ◽  
H M Muchall ◽  
C D Roy ◽  
J Ma ◽  
R S Brown
Keyword(s):  
Photoelectron Spectroscopy ◽  
Molecular Orbitals ◽  
Ultraviolet Photoelectron Spectroscopy ◽  
Excellent Correlation ◽  
Model Compounds ◽  
Ionization Energies ◽  
Highest Occupied Molecular Orbitals ◽  
Equilibrium Geometries ◽  
Good Agreement

Distorted amides 3,4-dihydro-2-oxo-1,4-ethanoquinoline (1a), 3,4-dihydro-2-oxo-1,4-propanoquinoline (1b), 3,3,4,5-tetrahydro-2-oxo-1,5-ethanobenzazepine (1c), and 3,3,4,5-tetrahydro-2-oxo-1,5-propanobenzazepine (1d) and the model compounds 2,N-dimethyl-acetanilide (2a), 2,N,N-trimethylaniline (3), and benzoquinuclidine (4) have been studied calculationally and with He(I) ultraviolet photoelectron spectroscopy. We find good agreement between experimentally obtained ionization energies for 1b, 1c, 1d, 2a, 3, and 4 and values calculated with HAM/3 using the equilibrium geometries obtained at the HF/6-31G** level of theory. An excellent correlation between experimental ionization energies and orbital energies from Becke3LYP/6-31+G* calculations led to the characterization of the highest occupied molecular orbitals for these compounds and for 1a, whose photoelectron spectrum could not be obtained due to its reactivity in the solid state.Key words: distorted amides, He(I) photoelectron spectroscopy, Becke3LYP, molecular orbitals.

Growth and Characterization of Epitaxial Graphene on SiC Induced by Carbon Evaporation

2010 ◽  
Vol 645-648 ◽  
pp. 593-596
Author(s):  
Ameer Al-Temimy ◽  
Christian Riedl ◽  
Ulrich Starke
Keyword(s):  
Photoelectron Spectroscopy ◽  
Epitaxial Graphene ◽  
Low Energy ◽  
Ultraviolet Photoelectron Spectroscopy ◽  
Force Microscopy ◽  
Low Energy Electron Diffraction ◽  
Atomic Force ◽  
Graphene Lattice ◽  
Low Energy Electron

By carbon evaporation under ultrahigh vacuum (UHV) conditions, epitaxial graphene can be grown on SiC(0001) at significantly lower temperatures than with conventional Si sublimation. Therefore, the degradation of the initial SiC surface morphology can be avoided. The layers of graphene are characterized by low energy electron diffraction (LEED), angle resolved ultraviolet photoelectron spectroscopy (ARUPS), and atomic force microscopy (AFM). On SiC the graphene lattice is rotated by 30o in comparison to preparation by annealing in UHV alone.

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