35.3L: Late-News Paper: Optical and Electrical Characterization of Particle-Related Defects in Large Area Inorganic Thick Dielectric Electroluminescent Displays

2003 ◽  
Vol 34 (1) ◽  
pp. 1114 ◽  
Author(s):  
D. Luke ◽  
R. Yang ◽  
D. Briglio ◽  
H. Abe ◽  
I. Yoshida ◽  
...  
Keyword(s):  
Electrical Characterization ◽  
Large Area ◽  
Late News

Electrical Characterization of Large Area 800 V Enhancement-Mode SiC VJFETs for High Temperature Applications

2009 ◽  
Vol 615-617 ◽  
pp. 715-718 ◽  
Author(s):  
Andrew Ritenour ◽  
Volodymyr Bondarenko ◽  
Robin L. Kelley ◽  
David C. Sheridan
Keyword(s):  
High Temperature ◽  
Elevated Temperature ◽  
Threshold Voltage ◽  
Room Temperature ◽  
Electrical Characterization ◽  
Saturation Current ◽  
Large Area ◽  
Enhancement Mode ◽  
High Temperature Operation

Prototype 800 V, 47 A enhancement-mode SiC VJFETs have been developed for high temperature operation (250 °C). With an active area of 23 mm2 and target threshold voltage of +1.25 V, these devices exhibited a 28 m room temperature on-resistance and excellent blocking characteristics at elevated temperature. With improved device packaging, on-resistance and saturation current values of 15 m and 100 A, respectively, are achievable.

Scanning Capacitance Microscopy for Failure Analysis of SOI-Based Advanced Microprocessors

2010 ◽  
Author(s):  
Lim Soon Huat ◽  
Lwin Hnin-Ei ◽  
Vinod Narang ◽  
J.M. Chin
Keyword(s):  
Failure Analysis ◽  
Electrical Characterization ◽  
Silicon On Insulator ◽  
Large Area ◽  
Scanning Capacitance Microscopy ◽  
Electrical Failure ◽  
Silicon Transistors ◽  
Soi Substrates ◽  
Electrical Data

Abstract Scanning capacitance microscopy (SCM) has been used in electrical failure analysis (EFA) to isolate failing silicon transistors on silicon-on-insulator (SOI) substrates. With the shrinking device geometry and increasing layout complexity, the defects in transistors are often non-visual and require detailed electrical analysis to pinpoint the defect signature. This paper demonstrates the use of SCM technique for EFA on SOI device substrates, as well as using this technique to isolate defective contacts in a relatively large-area scan of 25µm x 25µm. We also performed dC/dV electrical characterization of defective transistors, and correlated the data from SCM technique and electrical data from nano-probing to locate failing transistors.

Optoelectronic Effects in Porous Silicon Related to the Visible Luminescence Mechanism

1994 ◽  
Vol 358 ◽  
Author(s):  
N. Koshida ◽  
H. Koyama ◽  
T. Ozaki ◽  
M. Araki ◽  
T. Oguro ◽  
...  
Keyword(s):  
Electrical Characterization ◽  
Polarization Degree ◽  
Carrier Injection ◽  
Large Area ◽  
Light Emitting ◽  
Visible Luminescence ◽  
The Relationship ◽  
Pl Quenching ◽  
Si Nanocrystallites

ABSTRACTSome optoelectronic effects in porous Si (PS) have been investigated in relation to the visible luminescence mechanism. As regards photoluminescence (PL), particular emphasis is placed on the relationship between photoconduction (PC) and PL excitation (PLE) spectra, the interaction of external electric field and PL emission, and polarization properties of PL Main subjects of electroluminescence (EL) studies reported here are the dynamic behavior of EL operation and the formation of a large-area contact by a conducting polymer (polypyrrole: PP). The observed experimental results (almost complete coincidence of PC spectra with PLE ones, linear polarization memory of PL definite correlation between the polarization degree and the PL efficiency, and comparable response time of electrical PL quenching and EL to the PL decay time) are consistent with our hypothesis that the major process of PL takes place within Si nanocrystallites. The electrical characterization of light-emitting PS diodes with PP contacts ensures the usefulness of the contact formation by electropolymerization as a technique for uniform and efficient carrier injection into PS.

Structural and Electrical Characterization of Shaped Beam Laser Recrystallized Polysilicon on Amorphous Substrates

1981 ◽  
Vol 4 ◽  
Author(s):  
T. J. Stultz ◽  
J. F. Gibbons
Keyword(s):  
Grain Size ◽  
Electrical Characterization ◽  
Grain Structure ◽  
Electrical Characteristics ◽  
Shaped Beam ◽  
Beam Laser ◽  
Cw Laser ◽  
Amorphous Substrates ◽  
Circular Beam

ABSTRACTStructural and electrical characterization of laser recrystallized LPCVD silicon films on amorphous substrates using a shaped cw laser beam have been performed. In comparing the results to data obtained using a circular beam, it was found that a significant increase in grain size can be achieved and that the surface morphology of the shaped beam recrystallized material was much smoother. It was also found that whereas circular beam recrystallized material has a random grain structure, shaped beam material is highly oriented with a <100> texture. Finally the electrical characteristics of the recrystallized film were very good when measured in directions parallel to the grain boundaries.

Vapor Deposition Polymerization and Electrical Characterization of TPD Thin Films

2011 ◽  
Vol E94-C (2) ◽  
pp. 157-163 ◽  
Author(s):  
Masakazu MUROYAMA ◽  
Ayako TAJIRI ◽  
Kyoko ICHIDA ◽  
Seiji YOKOKURA ◽  
Kuniaki TANAKA ◽  
...  
Keyword(s):  
Thin Films ◽  
Vapor Deposition ◽  
Electrical Characterization

Electrical Characterization of Different Failure Modes in Sub-100 nm Devices Using Nanoprobing Technique

2009 ◽  
Author(s):  
E. Hendarto ◽  
S.L. Toh ◽  
J. Sudijono ◽  
P.K. Tan ◽  
H. Tan ◽  
...  
Keyword(s):  
Electron Microscope ◽  
Focused Ion Beam ◽  
Failure Modes ◽  
Ion Beam ◽  
Electrical Characterization ◽  
Nickel Silicide ◽  
Fault Isolation ◽  
Technology Nodes ◽  
Scanning Electron

Abstract The scanning electron microscope (SEM) based nanoprobing technique has established itself as an indispensable failure analysis (FA) technique as technology nodes continue to shrink according to Moore's Law. Although it has its share of disadvantages, SEM-based nanoprobing is often preferred because of its advantages over other FA techniques such as focused ion beam in fault isolation. This paper presents the effectiveness of the nanoprobing technique in isolating nanoscale defects in three different cases in sub-100 nm devices: soft-fail defect caused by asymmetrical nickel silicide (NiSi) formation, hard-fail defect caused by abnormal NiSi formation leading to contact-poly short, and isolation of resistive contact in a large electrical test structure. Results suggest that the SEM based nanoprobing technique is particularly useful in identifying causes of soft-fails and plays a very important role in investigating the cause of hard-fails and improving device yield.

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