scholarly journals Variable-Dynamic-Range Complementary Metal–Oxide–Semiconductor Image Sensor with Gate/Body-Tied Metal Oxide Silicon Field Effect Transistor-Type Photodetector Using Feedback Structure

2016 ◽  
pp. 1
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Dynamic Range ◽  
Image Sensor ◽  
Feedback Structure ◽  
Effect Transistor ◽  
Metal Oxide Silicon

Quantum Dot Made in Metal Oxide Silicon-Nanowire Field Effect Transistor Working at Room Temperature.

Nano Letters ◽  
2015 ◽  
Vol 15 (5) ◽  
pp. 2958-2964 ◽  
Author(s):  
Romain Lavieville ◽  
François Triozon ◽  
Sylvain Barraud ◽  
Andrea Corna ◽  
Xavier Jehl ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Metal Oxide ◽  
Field Effect ◽  
Room Temperature ◽  
Field Effect Transistor ◽  
Silicon Nanowire ◽  
Effect Transistor ◽  
Metal Oxide Silicon ◽  
Made In

Substrate current enhancement in 65 nm metal-oxide-silicon field-effect transistor under external mechanical stress

2009 ◽  
Vol 517 (5) ◽  
pp. 1715-1718 ◽  
Author(s):  
Y.J. Kuo ◽  
T.C. Chang ◽  
P.H. Yeh ◽  
S.C. Chen ◽  
C.H. Dai ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Mechanical Stress ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Substrate Current ◽  
Effect Transistor ◽  
Metal Oxide Silicon

scholarly journals A Graphene/Polycrystalline Silicon Photodiode and Its Integration in a Photodiode–Oxide–Semiconductor Field Effect Transistor

Micromachines ◽  
2020 ◽  
Vol 11 (6) ◽  
pp. 596
Author(s):  
Yu-Yang Tsai ◽  
Chun-Yu Kuo ◽  
Bo-Chang Li ◽  
Po-Wen Chiu ◽  
Klaus Y. J. Hsu
Keyword(s):  
Metal Oxide ◽  
Polycrystalline Silicon ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Image Sensor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Silicon Photodiode ◽  
Effect Transistor ◽  
Logarithmic Dependence

In recent years, the characteristics of the graphene/crystalline silicon junction have been frequently discussed in the literature, but study of the graphene/polycrystalline silicon junction and its potential applications is hardly found. The present work reports the observation of the electrical and optoelectronic characteristics of a graphene/polycrystalline silicon junction and explores one possible usage of the junction. The current–voltage curve of the junction was measured to show the typical exponential behavior that can be seen in a forward biased diode, and the photovoltage of the junction showed a logarithmic dependence on light intensity. A new phototransistor named the “photodiode–oxide–semiconductor field effect transistor (PDOSFET)” was further proposed and verified in this work. In the PDOSFET, a graphene/polycrystalline silicon photodiode was directly merged on top of the gate oxide of a conventional metal–oxide–semiconductor field effect transistor (MOSFET). The magnitude of the channel current of this phototransistor showed a logarithmic dependence on the illumination level. It is shown in this work that the PDOSFET facilitates a better pixel design in a complementary metal–oxide–semiconductor (CMOS) image sensor, especially beneficial for high dynamic range (HDR) image detection.

A metal‐oxide‐silicon field‐effect transistor made by means of solid‐phase doping

1989 ◽  
Vol 65 (11) ◽  
pp. 4435-4437
Author(s):  
S. F. Gong ◽  
H. T. G. Hentzell ◽  
A. Robertsson ◽  
J. Strandberg ◽  
J. Hagel
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Solid Phase ◽  
Effect Transistor ◽  
Metal Oxide Silicon
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