A percolation model for random telegraph signals in metal-oxide-silicon field effect transistor drain current

2008 ◽  
Vol 93 (4) ◽  
pp. 043517 ◽  
Author(s):  
L. Forbes ◽  
D. A. Miller
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Drain Current ◽  
Percolation Model ◽  
Random Telegraph Signals ◽  
Effect Transistor ◽  
Metal Oxide Silicon

scholarly journals Subthreshold Characteristics of a Metal-Oxide–Semiconductor Field-Effect Transistor with External PVDF Gate Capacitance

Crystals ◽  
2019 ◽  
Vol 9 (12) ◽  
pp. 673
Author(s):  
Jing-Jenn Lin ◽  
Ji-Hua Tao ◽  
You-Lin Wu
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Drain Current ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Subthreshold Slope ◽  
Ferroelectric Capacitor ◽  
In Series ◽  
Effect Transistor

An organic ferroelectric capacitor, using polyvinylidene difluoride (PVDF) as the dielectric, was fabricated. By connecting the PVDF capacitor in series to the gate of a commercially purchased metal-oxide–semiconductor field-effect transistor (MOSFET), drain current (ID)–drain voltage (VD) characteristics and drain current (ID)–gate voltage (VG) characteristics were measured. In addition, the subthreshold slopes of the MOSFET were determined from the ID–VG curves. It was found that the subthreshold slope could be effectively reduced by 23% of its original value when the PVDF capacitor was added to the gate of the MOSFET.

Quantum Dot Made in Metal Oxide Silicon-Nanowire Field Effect Transistor Working at Room Temperature.

Nano Letters ◽  
2015 ◽  
Vol 15 (5) ◽  
pp. 2958-2964 ◽  
Author(s):  
Romain Lavieville ◽  
François Triozon ◽  
Sylvain Barraud ◽  
Andrea Corna ◽  
Xavier Jehl ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Metal Oxide ◽  
Field Effect ◽  
Room Temperature ◽  
Field Effect Transistor ◽  
Silicon Nanowire ◽  
Effect Transistor ◽  
Metal Oxide Silicon ◽  
Made In

Substrate current enhancement in 65 nm metal-oxide-silicon field-effect transistor under external mechanical stress

2009 ◽  
Vol 517 (5) ◽  
pp. 1715-1718 ◽  
Author(s):  
Y.J. Kuo ◽  
T.C. Chang ◽  
P.H. Yeh ◽  
S.C. Chen ◽  
C.H. Dai ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Mechanical Stress ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Substrate Current ◽  
Effect Transistor ◽  
Metal Oxide Silicon

scholarly journals Improving the Performance of the ToGoFET Probe: Advances in Design, Fabrication, and Signal Processing

Micromachines ◽  
2021 ◽  
Vol 12 (11) ◽  
pp. 1303
Author(s):  
Hoontaek Lee ◽  
Junsoo Kim ◽  
Kumjae Shin ◽  
Wonkyu Moon
Keyword(s):  
Signal Processing ◽  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Complementary Metal Oxide Semiconductor ◽  
Drain Current ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Cmos Process ◽  
Effect Transistor

We report recent improvements of the tip-on-gate of field-effect-transistor (ToGoFET) probe used for capacitive measurement. Probe structure, fabrication, and signal processing were modified. The inbuilt metal-oxide-semiconductor field-effect-transistor (MOSFET) was redesigned to ensure reliable probe operation. Fabrication was based on the standard complementary metal-oxide-semiconductor (CMOS) process, and trench formation and the channel definition were modified. Demodulation of the amplitude-modulated drain current was varied, enhancing the signal-to-noise ratio. The - characteristics of the inbuilt MOSFET reflect the design and fabrication modifications, and measurement of a buried electrode revealed improved ToGoFET imaging performance. The minimum measurable value was enhanced 20-fold.

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