Simulation Study on Dependence of Channel Potential Self-Boosting on Device Scale and Doping Concentration in 2-D and 3-D NAND-Type Flash Memory Devices

2010 ◽  
Vol E93-C (5) ◽  
pp. 596-601
Author(s):  
Seongjae CHO ◽  
Jung Hoon LEE ◽  
Yoon KIM ◽  
Jang-Gn YUN ◽  
Hyungcheol SHIN ◽  
...  
Keyword(s):  
Simulation Study ◽  
Flash Memory ◽  
Doping Concentration ◽  
Memory Devices ◽  
Channel Potential

Adaptive Interference Mitigation for Multilevel Flash Memory Devices

2011 ◽  
Vol E94-A (11) ◽  
pp. 2453-2457
Author(s):  
Myeongwoon JEON ◽  
Kyungchul KIM ◽  
Sungkyu CHUNG ◽  
Seungjae CHUNG ◽  
Beomju SHIN ◽  
...  
Keyword(s):  
Flash Memory ◽  
Interference Mitigation ◽  
Memory Devices

Characterization of tunnel-oxide degradation due to plasma field oxide recess in flash memory devices

2012 ◽  
Vol 520 (15) ◽  
pp. 5007-5010 ◽  
Author(s):  
Jeungyun Lee ◽  
Dong-Kwon Kim ◽  
Gyung-Jin Min ◽  
Ilsub Chung
Keyword(s):  
Flash Memory ◽  
Memory Devices ◽  
Oxide Degradation ◽  
Field Oxide

Garbage Collection Algorithms for NAND Flash Memory Devices -- An Overview

2013 ◽  
Author(s):  
Raja Subramani ◽  
Haritima Swapnil ◽  
Niharika Thakur ◽  
Bharath Radhakrishnan ◽  
Krishnamurthy Puttaiah
Keyword(s):  
Flash Memory ◽  
Garbage Collection ◽  
Memory Devices ◽  
Nand Flash ◽  
Nand Flash Memory

Excellent Emission Characteristics of Tunneling Oxides Formed Using Ultrathin Silicon Films for Flash Memory Devices

1996 ◽  
Vol 35 (Part 1, No. 6A) ◽  
pp. 3369-3373 ◽  
Author(s):  
Ping-Wei Wang ◽  
Tzu-Kun Ku ◽  
Huan-Ping Su ◽  
Gary Hong ◽  
Huang-Chung Cheng
Keyword(s):  
Flash Memory ◽  
Silicon Films ◽  
Emission Characteristics ◽  
Memory Devices
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