Effects of channel doping concentration and fin dimension variation on self-boosting of channel potential in NAND-type SONOS flash memory array based on bulk-FinFETs

2010 ◽  
Vol 10 (4) ◽  
pp. 1096-1102 ◽  
Author(s):  
Seongjae Cho ◽  
Jung-Dal Choi ◽  
Byung-Gook Park ◽  
Il Hwan Cho
Keyword(s):  
Flash Memory ◽  
Doping Concentration ◽  
Memory Array ◽  
Channel Potential

Simulation Study on Dependence of Channel Potential Self-Boosting on Device Scale and Doping Concentration in 2-D and 3-D NAND-Type Flash Memory Devices

2010 ◽  
Vol E93-C (5) ◽  
pp. 596-601
Author(s):  
Seongjae CHO ◽  
Jung Hoon LEE ◽  
Yoon KIM ◽  
Jang-Gn YUN ◽  
Hyungcheol SHIN ◽  
...  
Keyword(s):  
Simulation Study ◽  
Flash Memory ◽  
Doping Concentration ◽  
Memory Devices ◽  
Channel Potential

Novel Three Dimensional (3D) NAND Flash Memory Array Having Tied Bit-line and Ground Select Transistor (TiGer)

2012 ◽  
Vol E95.C (5) ◽  
pp. 837-841 ◽  
Author(s):  
Se Hwan PARK ◽  
Yoon KIM ◽  
Wandong KIM ◽  
Joo Yun SEO ◽  
Hyungjin KIM ◽  
...  
Keyword(s):  
Flash Memory ◽  
Three Dimensional ◽  
Nand Flash ◽  
Nand Flash Memory ◽  
Memory Array

Fitting Cells Into a Narrow $V_{T}$ Interval: Physical Constraints Along the Lifetime of an Extremely Scaled NAND Flash Memory Array

2015 ◽  
Vol 62 (5) ◽  
pp. 1491-1497 ◽  
Author(s):  
Giovanni Maria Paolucci ◽  
Christian Monzio Compagnoni ◽  
Alessandro S. Spinelli ◽  
Andrea L. Lacaita ◽  
Akira Goda
Keyword(s):  
Flash Memory ◽  
Nand Flash ◽  
Nand Flash Memory ◽  
Physical Constraints ◽  
Memory Array

Erratic Erase In ETOX/sup TM/ Flash Memory Array

1993 ◽  
Author(s):  
Ong ◽  
Fazio ◽  
Mielke ◽  
Pan ◽  
Righos ◽  
...  
Keyword(s):  
Flash Memory ◽  
Memory Array

scholarly journals Investigation of Inhibited Channel Potential of 3D NAND Flash Memory According to Word-Line Location

Electronics ◽  
2020 ◽  
Vol 9 (2) ◽  
pp. 268
Author(s):  
Sangwoo Han ◽  
Youngseok Jeong ◽  
Heesauk Jhon ◽  
Myounggon Kang
Keyword(s):  
Flash Memory ◽  
High Potential ◽  
Potential Difference ◽  
Nand Flash ◽  
Nand Flash Memory ◽  
Main Cell ◽  
Channel Potential ◽  
Symmetrical Potential

Natural local self-boosting (NLSB) was analyzed according to the location of a selected word-line (WL) where potential boosting occurs. When the same pattern occurred, it was found that the top cells (WL11 through WL15) and bottom cells (WL0 through WL4) have identically symmetrical potential boosting. In addition, in the region of the middle cells (WL6 through WL10), a slight change in the potential boosting was also almost the same. In the 3D NAND, where there was a dummy WL (DWL), the NLSB for the edge WL changed as the pattern of the DWL changed. The DWL did not affect the NLSB of the main cell, regardless of the pattern. Therefore, the high potential of the edge WL could reduce the potential difference between the main cell and the edge WL using the DWL.

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