scholarly journals Depth Profile Measurements of Hydrogen Isotopes near the Surface of the TFTR Plasma Facing Component using Nuclear Reaction Analysis

2005 ◽  
Vol 81 (4) ◽  
pp. 296-301
Author(s):  
Naoyoshi KUBOTA ◽  
Kentaro OCHIAI ◽  
Tyuzo KUTSUKAKE ◽  
Takao HAYASHI ◽  
Wataru SHU ◽  
...  
1987 ◽  
Vol 107 ◽  
Author(s):  
S. M. Myers

AbstractSilicon with buried oxides formed by ion implantation (SIMOX) or zone-melt recrystallization (ZMR) was exposed to deuterium gas at temperatures from 773 K to 1273 K, and the depth profile of the D was then determined by nuclear-reaction analysis. The D was localized within the buried oxide, with no measurable quantity in the Si phase. Uptake was controlled by permeation through the Si overlayer, and the permeability of D in Si was determined at 873 K. The sample dependence of D uptake indicated substantially fewer defect-trap sites in SIMOX oxide annealed at 1678 K as opposed to 1548 K, with still smaller defect densities in the ZMR oxide. Hydrogen exposure at 1273 K substantially disrupted the SIMOX structures.


1993 ◽  
Vol 316 ◽  
Author(s):  
Oleg I. Zabashta ◽  
A.I. Kul'ment'ev ◽  
V.E. Storizko

The general problem in the analysis of a sample by non-destructive techniques such as nuclear microanalysis, ellipsometry, etc. is the interpretation of the measured data. The impurity depth profile obtained may noticeable non-physical fluctuations. From the mathematical point of view this could be explain by the fact that while interpreting the results we have to solve an incorrect problem to which routine computational methods are not applicable.


Author(s):  
J. Jagielski ◽  
U. Ostaszewska ◽  
D.M. Bielinski ◽  
D. Grambole ◽  
M. Romaniec ◽  
...  

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