Amorphous Silicon Alloy Punch-Through Diodes for Display Applications

1987 ◽  
Vol 95 ◽  
Author(s):  
W. den Boer ◽  
S. Guha ◽  
A. Kawasaki ◽  
Z. Yaniv
Keyword(s):  
Liquid Crystal ◽  
Amorphous Silicon ◽  
Active Layer ◽  
Liquid Crystal Display ◽  
Silicon Alloy ◽  
Nonlinear Conduction ◽  
Current Voltage ◽  
Highly Nonlinear ◽  
Current Voltage Characteristics

AbstractThe current-voltage characteristics of amorphous silicon alloy n-π-n and p-i-p diodes have been investigated. These diodes show highly nonlinear conduction characteristics which are attributed to the punch-through effect. The dependence of the non-linearity on the thickness and doping of the intermediate active layer support this interpretation. An experimental 108 × 108 pixel liquid crystal display was built with punch-through diodes as pixel switches.

Back-To-Back Amorphous Silicon Diodes For Driving Lc Displays

1986 ◽  
Vol 70 ◽  
Author(s):  
Joseph Dresner
Keyword(s):  
Thin Film ◽  
Liquid Crystal ◽  
Amorphous Silicon ◽  
Liquid Crystal Display ◽  
Tunneling Current ◽  
Liquid Crystal Displays ◽  
Electrical Characteristics ◽  
Thermally Activated ◽  
Current Voltage ◽  
The Stability

ABSTRACTThis paper describes the preparation and electrical characteristics of a-Si:H p-i-n-i-p and n-i-p-i-n thin film diodes suitable for driving monochrome liquid crystal displays with more than 500 lines. The symmetrical current-voltage curves in the reverse breakdown regime can ge described by i=i exp (E/Eo) where E ≃9×104 V/cm. In the range 20–125°C, the current is thermally activated with an energy of 0.25eV. The response time to applied voltage pulses is ≤ 10 us. The stability of the electrical characteristics is adequate for at least 104 hours of operation in an liquid crystal display.Electrical characteristics indicate that the reverse breakdown current is a tunneling current injected into the i-layer and that electrons are likely to be dominant.

Simulation of Hydrogenated Amorphous Silicon Germanium Alloys for Bandgap Grading

1999 ◽  
Vol 557 ◽  
Author(s):  
E. Schroten ◽  
M. Zeman ◽  
R. A. C. M. M. van Swaaij ◽  
L. L. A. Vosteen ◽  
J. W. Metselaar
Keyword(s):  
Amorphous Silicon ◽  
Material Properties ◽  
Silicon Germanium ◽  
Hydrogenated Amorphous Silicon ◽  
Model Parameters ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Amorphous Silicon Germanium ◽  
Parameter Values ◽  
Hydrogenated Amorphous

AbstractComputer simulations are reported of hydrogenated amorphous silicon germanium (a-SiGe:H) layers that make up the graded part of the intrinsic layer near the interfaces of a-SiGe:H solar cells. Therefore the graded part is approached with a ‘staircase’ bandgap profile, consisting of three layers within which the material properties are constant. Calibrated model parameters are obtained by matching simulation results of material properties of intrinsic a-SiGe:H single layers to measurements. Using the obtained model parameter sets subsequent simulations of p-i-n devices with intrinsic material similar to the single layers are matched to measured current-voltage characteristics. The changes in parameter values are evaluated as a function of optical gap.

scholarly journals Synthesis and Characterization of ZnO/Glass/ZnO Structures Showing Highly Nonlinear Current-Voltage Characteristics

2009 ◽  
Vol 50 (5) ◽  
pp. 1060-1066 ◽  
Author(s):  
Naoki Ohashi ◽  
Ken Kataoka ◽  
Takeshi Ohgaki ◽  
Isao Sakaguchi ◽  
Hajime Haneda
Keyword(s):  
Synthesis And Characterization ◽  
Current Voltage ◽  
Highly Nonlinear ◽  
Current Voltage Characteristics

Step-Like Current-Voltage Characteristics in Metal/a-Si:H/Metal Structures

1993 ◽  
Vol 297 ◽  
Author(s):  
J. Hajto ◽  
A.J. Snell ◽  
M.J. Rose ◽  
A.E. Owen ◽  
I.S. Osborne ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Room Temperature ◽  
Bias Current ◽  
Experimental Results ◽  
Metal Structures ◽  
Half Integer ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Memory Structures

We present experimental results showing that Cr/p+/V amorphous silicon memory structures at room temperature exhibit step-like current-voltage characteristics associated with discrete, non-random resistance values. The resistance values observed are ∼26kΩ/i where i is an integer or half integer. The low bias current-voltage characteristics prior to the first step suggest that conduction in this regime is governed by tunneling across a region having very small dimensions, of the order of ∼5-7 Å, and having a diameter ∼30-50 Å.

Current‐voltage characteristics of amorphous silicon P‐N junctions

1980 ◽  
Vol 51 (8) ◽  
pp. 4287-4290 ◽  
Author(s):  
A. J. Harris ◽  
R. S. Walker ◽  
R. Sneddon
Keyword(s):  
Amorphous Silicon ◽  
Current Voltage ◽  
Current Voltage Characteristics

Application of amorphous silicon field effect transistors in addressable liquid crystal display panels

1981 ◽  
Vol 24 (4) ◽  
pp. 357-362 ◽  
Author(s):  
A. J. Snell ◽  
K. D. Mackenzie ◽  
W. E. Spear ◽  
P. G. LeComber ◽  
A. J. Hughes
Keyword(s):  
Liquid Crystal ◽  
Amorphous Silicon ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Liquid Crystal Display
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