Application of amorphous silicon field effect transistors in addressable liquid crystal display panels

A. J. Snell; K. D. Mackenzie; W. E. Spear; P. G. LeComber; A. J. Hughes

doi:10.1007/bf00899734

Application of amorphous silicon field effect transistors in addressable liquid crystal display panels

Applied Physics ◽

10.1007/bf00899734 ◽

1981 ◽

Vol 24 (4) ◽

pp. 357-362 ◽

Cited By ~ 191

Author(s):

A. J. Snell ◽

K. D. Mackenzie ◽

W. E. Spear ◽

P. G. LeComber ◽

A. J. Hughes

Keyword(s):

Liquid Crystal ◽

Amorphous Silicon ◽

Field Effect ◽

Field Effect Transistors ◽

Liquid Crystal Display

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APPLICATIONS OF a-Si FIELD EFFECT TRANSISTORS IN LIQUID CRYSTAL DISPLAYS AND IN INTEGRATED LOGIC CIRCUITS

Le Journal de Physique Colloques ◽

10.1051/jphyscol:1981490 ◽

1981 ◽

Vol 42 (C4) ◽

pp. C4-423-C4-432 ◽

Cited By ~ 2

Author(s):

P. G. Le Comber ◽

A. J. Snell ◽

K. D. Mackenzie ◽

W. E. Spear

Keyword(s):

Liquid Crystal ◽

Field Effect ◽

Field Effect Transistors ◽

Liquid Crystal Displays ◽

Logic Circuits ◽

Integrated Logic

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Anthradithiophene-based liquid crystal molecules: High carrier mobilities enhanced by rubbed polyimides for the application in organic field-effect transistors

Organic Electronics ◽

10.1016/j.orgel.2018.02.002 ◽

2018 ◽

Vol 57 ◽

pp. 82-88 ◽

Cited By ~ 3

Author(s):

Wei-Chih Wang ◽

Tien-Tien Yeh ◽

Wei-Lung Liau ◽

Jiun-Tai Chen ◽

Chain-Shu Hsu

Keyword(s):

Liquid Crystal ◽

Field Effect ◽

Field Effect Transistors ◽

Organic Field Effect Transistors ◽

High Carrier

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Density of bulk and surface states and static characteristics of amorphous silicon field-effect transistors

phys stat sol (a) ◽

10.1002/pssa.2211430120 ◽

1994 ◽

Vol 143 (1) ◽

pp. 157-167

Author(s):

E. V. Grekov

Keyword(s):

Amorphous Silicon ◽

Field Effect ◽

Field Effect Transistors ◽

Surface States ◽

Static Characteristics

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Physical force-sensitive touch responses in liquid crystal-gated-organic field-effect transistors with polymer dipole control layers

Organic Electronics ◽

10.1016/j.orgel.2015.10.022 ◽

2016 ◽

Vol 28 ◽

pp. 184-188 ◽

Cited By ~ 5

Author(s):

Jooyeok Seo ◽

Myeonghun Song ◽

Chulyeon Lee ◽

Sungho Nam ◽

Hwajeong Kim ◽

...

Keyword(s):

Liquid Crystal ◽

Field Effect ◽

Field Effect Transistors ◽

Organic Field Effect Transistors ◽

Physical Force

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Vertical-Type Amorphous-Silicon Field-Effect Transistors with Small Parasitic Elements

Japanese Journal of Applied Physics ◽

10.1143/jjap.25.l798 ◽

1986 ◽

Vol 25 (Part 2, No. 9) ◽

pp. L798-L800 ◽

Cited By ~ 6

Author(s):

Yasutaka Uchida ◽

Yoshiaki Watanabe ◽

Masaru Takabatake ◽

Masakiyo Matsumura

Keyword(s):

Amorphous Silicon ◽

Field Effect ◽

Field Effect Transistors

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The characteristics and properties of optimised amorphous silicon field effect transistors

Applied Physics A Solids and Surface ◽

10.1007/bf00616310 ◽

1983 ◽

Vol 31 (2) ◽

pp. 87-92 ◽

Cited By ~ 81

Author(s):

K. D. Mackenzie ◽

A. J. Snell ◽

I. French ◽

P. G. LeComber ◽

W. E. Spear

Keyword(s):

Amorphous Silicon ◽

Field Effect ◽

Field Effect Transistors

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Examination and optimizing of a liquid crystal display used as spatial light modulator concerning the fringing field effect

10.1117/12.929707 ◽

2012 ◽

Cited By ~ 3

Author(s):

Christian Lingel ◽

Tobias Haist ◽

Wolfgang Osten

Keyword(s):

Liquid Crystal ◽

Field Effect ◽

Spatial Light Modulator ◽

Liquid Crystal Display ◽

Light Modulator ◽

Fringing Field ◽

Fringing Field Effect

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Performance spread reduction in organic field-effect transistors using semiconducting liquid-crystal polymers

Applied Physics Letters ◽

10.1063/1.4820144 ◽

2013 ◽

Vol 103 (9) ◽

pp. 093304 ◽

Cited By ~ 3

Author(s):

Kornelius Tetzner ◽

Warren Duffy ◽

Karlheinz Bock

Keyword(s):

Liquid Crystal ◽

Field Effect ◽

Field Effect Transistors ◽

Liquid Crystal Polymers ◽

Organic Field Effect Transistors

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Amorphous-silicon silicon-nitride field-effect transistors

Electronics Letters ◽

10.1049/el:19820411 ◽

1982 ◽

Vol 18 (14) ◽

pp. 599 ◽

Cited By ~ 4

Author(s):

K. Katoh ◽

M. Yasui ◽

H. Watanabe

Keyword(s):

Silicon Nitride ◽

Amorphous Silicon ◽

Field Effect ◽

Field Effect Transistors ◽

Silicon Silicon

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Amorphous Silicon Alloy Punch-Through Diodes for Display Applications

MRS Proceedings ◽

10.1557/proc-95-615 ◽

1987 ◽

Vol 95 ◽

Author(s):

W. den Boer ◽

S. Guha ◽

A. Kawasaki ◽

Z. Yaniv

Keyword(s):

Liquid Crystal ◽

Amorphous Silicon ◽

Active Layer ◽

Liquid Crystal Display ◽

Silicon Alloy ◽

Nonlinear Conduction ◽

Current Voltage ◽

Highly Nonlinear ◽

Current Voltage Characteristics

AbstractThe current-voltage characteristics of amorphous silicon alloy n-π-n and p-i-p diodes have been investigated. These diodes show highly nonlinear conduction characteristics which are attributed to the punch-through effect. The dependence of the non-linearity on the thickness and doping of the intermediate active layer support this interpretation. An experimental 108 × 108 pixel liquid crystal display was built with punch-through diodes as pixel switches.

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