Back-To-Back Amorphous Silicon Diodes For Driving Lc Displays

1986 ◽  
Vol 70 ◽  
Author(s):  
Joseph Dresner
Keyword(s):  
Thin Film ◽  
Liquid Crystal ◽  
Amorphous Silicon ◽  
Liquid Crystal Display ◽  
Tunneling Current ◽  
Liquid Crystal Displays ◽  
Electrical Characteristics ◽  
Thermally Activated ◽  
Current Voltage ◽  
The Stability

ABSTRACTThis paper describes the preparation and electrical characteristics of a-Si:H p-i-n-i-p and n-i-p-i-n thin film diodes suitable for driving monochrome liquid crystal displays with more than 500 lines. The symmetrical current-voltage curves in the reverse breakdown regime can ge described by i=i exp (E/Eo) where E ≃9×104 V/cm. In the range 20–125°C, the current is thermally activated with an energy of 0.25eV. The response time to applied voltage pulses is ≤ 10 us. The stability of the electrical characteristics is adequate for at least 104 hours of operation in an liquid crystal display.Electrical characteristics indicate that the reverse breakdown current is a tunneling current injected into the i-layer and that electrons are likely to be dominant.

Amorphous Silicon Alloy Punch-Through Diodes for Display Applications

1987 ◽  
Vol 95 ◽  
Author(s):  
W. den Boer ◽  
S. Guha ◽  
A. Kawasaki ◽  
Z. Yaniv
Keyword(s):  
Liquid Crystal ◽  
Amorphous Silicon ◽  
Active Layer ◽  
Liquid Crystal Display ◽  
Silicon Alloy ◽  
Nonlinear Conduction ◽  
Current Voltage ◽  
Highly Nonlinear ◽  
Current Voltage Characteristics

AbstractThe current-voltage characteristics of amorphous silicon alloy n-π-n and p-i-p diodes have been investigated. These diodes show highly nonlinear conduction characteristics which are attributed to the punch-through effect. The dependence of the non-linearity on the thickness and doping of the intermediate active layer support this interpretation. An experimental 108 × 108 pixel liquid crystal display was built with punch-through diodes as pixel switches.

Alternative Complex Liquid Crystal Displays

1989 ◽  
Vol 149 ◽  
Author(s):  
E P Raynes
Keyword(s):  
Thin Film ◽  
Liquid Crystal ◽  
Liquid Crystals ◽  
Amorphous Silicon ◽  
Thin Film Transistors ◽  
Liquid Crystal Displays ◽  
Ferroelectric Liquid Crystals ◽  
Alternative Technologies ◽  
Complex Liquid ◽  
Major Progress

ABSTRACTThe first major progress towards complex LCD's has been made using arrays of thin film transistors (TFT's) fabricated using amorphous silicon (a - Si) technology. However, apart from other two and three terminal devices, there are also two new LCD technologies which directly improve the performance of the LCD without the need for extra switching elements. These are the supertwist (or STN) LCD and displays based on ferroelectric liquid crystals (FELC). These two alternative technologies are described and teir performance compared with that of displays fabricated using α - Si TFT's.

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