Current–voltage characteristics under in‐plane conduction in doping‐modulated amorphous silicon multilayers

1992 ◽  
Vol 71 (10) ◽  
pp. 5053-5058 ◽  
Author(s):  
Hidetoshi Oheda
Keyword(s):  
Amorphous Silicon ◽  
In Doping ◽  
Current Voltage ◽  
Current Voltage Characteristics

Simulation of Hydrogenated Amorphous Silicon Germanium Alloys for Bandgap Grading

1999 ◽  
Vol 557 ◽  
Author(s):  
E. Schroten ◽  
M. Zeman ◽  
R. A. C. M. M. van Swaaij ◽  
L. L. A. Vosteen ◽  
J. W. Metselaar
Keyword(s):  
Amorphous Silicon ◽  
Material Properties ◽  
Silicon Germanium ◽  
Hydrogenated Amorphous Silicon ◽  
Model Parameters ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Amorphous Silicon Germanium ◽  
Parameter Values ◽  
Hydrogenated Amorphous

AbstractComputer simulations are reported of hydrogenated amorphous silicon germanium (a-SiGe:H) layers that make up the graded part of the intrinsic layer near the interfaces of a-SiGe:H solar cells. Therefore the graded part is approached with a ‘staircase’ bandgap profile, consisting of three layers within which the material properties are constant. Calibrated model parameters are obtained by matching simulation results of material properties of intrinsic a-SiGe:H single layers to measurements. Using the obtained model parameter sets subsequent simulations of p-i-n devices with intrinsic material similar to the single layers are matched to measured current-voltage characteristics. The changes in parameter values are evaluated as a function of optical gap.

Step-Like Current-Voltage Characteristics in Metal/a-Si:H/Metal Structures

1993 ◽  
Vol 297 ◽  
Author(s):  
J. Hajto ◽  
A.J. Snell ◽  
M.J. Rose ◽  
A.E. Owen ◽  
I.S. Osborne ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Room Temperature ◽  
Bias Current ◽  
Experimental Results ◽  
Metal Structures ◽  
Half Integer ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Memory Structures

We present experimental results showing that Cr/p+/V amorphous silicon memory structures at room temperature exhibit step-like current-voltage characteristics associated with discrete, non-random resistance values. The resistance values observed are ∼26kΩ/i where i is an integer or half integer. The low bias current-voltage characteristics prior to the first step suggest that conduction in this regime is governed by tunneling across a region having very small dimensions, of the order of ∼5-7 Å, and having a diameter ∼30-50 Å.

Amorphous Silicon Alloy Punch-Through Diodes for Display Applications

1987 ◽  
Vol 95 ◽  
Author(s):  
W. den Boer ◽  
S. Guha ◽  
A. Kawasaki ◽  
Z. Yaniv
Keyword(s):  
Liquid Crystal ◽  
Amorphous Silicon ◽  
Active Layer ◽  
Liquid Crystal Display ◽  
Silicon Alloy ◽  
Nonlinear Conduction ◽  
Current Voltage ◽  
Highly Nonlinear ◽  
Current Voltage Characteristics

AbstractThe current-voltage characteristics of amorphous silicon alloy n-π-n and p-i-p diodes have been investigated. These diodes show highly nonlinear conduction characteristics which are attributed to the punch-through effect. The dependence of the non-linearity on the thickness and doping of the intermediate active layer support this interpretation. An experimental 108 × 108 pixel liquid crystal display was built with punch-through diodes as pixel switches.

Current‐voltage characteristics of amorphous silicon P‐N junctions

1980 ◽  
Vol 51 (8) ◽  
pp. 4287-4290 ◽  
Author(s):  
A. J. Harris ◽  
R. S. Walker ◽  
R. Sneddon
Keyword(s):  
Amorphous Silicon ◽  
Current Voltage ◽  
Current Voltage Characteristics

Characteristics of Amorphous Silicon Based Alloy Field Effect Transistors

1984 ◽  
Vol 33 ◽  
Author(s):  
M. Shur ◽  
M. Hack ◽  
C. Hyun
Keyword(s):  
Amorphous Silicon ◽  
Field Effect ◽  
Energy Gap ◽  
Field Effect Transistors ◽  
Localized States ◽  
Flat Band ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
A New Technique ◽  
Silicon Based

ABSTRACTWe have developed a new theory to describe the current-voltage characteristics of amorphous silicon based alloy field effect transistors. We show that the transition from below to above threshold operation occurs when the Fermi level in the accumulation region moves from the deep to tail localized states in the energy gap and that the field effect mobility is dependent on gate voltage. We also propose a new technique to determine the flat-band voltage from the I-V characteristics in the below threshold regime.

Application of SC-Simul for Numerical Modeling of the Opto-Electronic Properties of Heterojunction Diodes

2005 ◽  
Vol 862 ◽  
Author(s):  
R. Brüggemann ◽  
M. Rösch ◽  
S. Tardon ◽  
G.H. Bauer
Keyword(s):  
Amorphous Silicon ◽  
Minority Carrier ◽  
Crystalline Silicon ◽  
Low Cost ◽  
Device Modeling ◽  
Interface Defects ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Heterojunction Diodes

AbstractWe apply the publicly available device modeling tool SC-Simul for simulating experiments with user-defined heterojunction diodes to discuss the role of the electric field in solar cells. For amorphous silicon/crystalline silicon heterodiodes, the role of interface defects, an amorphous silicon buffer layer and low-cost crystalline silicon is studied by simulation of current-voltage characteristics and photoluminescence. Photoluminescence is sensitive to the minority carrier density in the volume of the device and can be used to monitor minority carrier properties in these diodes.

Current-Voltage Characteristics-What Do Experiments Really Tell Us?

1989 ◽  
Vol 149 ◽  
Author(s):  
Finley R. Shapiro ◽  
Marvin Silver
Keyword(s):  
Amorphous Silicon ◽  
Computer Simulations ◽  
Silicon Hydride ◽  
Transient Currents ◽  
Measured Current ◽  
Current Voltage ◽  
Hole Band ◽  
Current Voltage Characteristics ◽  
Capture Rates

ABSTRACTExperimentally measured current-voltage measurements in amorphous silicon hydride pin diodes have been fit to computer simulations by Hack and den Boer [1] using relatively small values for the neutral and charged trap capture rates. Silver and Cannella [2] have proposed larger values for the capture rates, accompanied by larger electron and hole band mobilities. We discuss here the possible reasons for expecting the larger values for the capture rates, and their influence on current voltage measurements both with and without the higher mobilities. It is found that the simulated I-V results using only the larger capture rates are much smaller than those for Hack and den Boer's parameters. However, when the large values are used for both the capture rates and the mobilities, the I-V relationship is quite similar to that for the smaller capture rates and mobilities. We also show the differences in the simulated transient currents for the different sets of parameters, and we discuss the causes of these differences.

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