Structural, Optical, and Electrical Properties of Amorphous Hydrogenated Carbon Nitride

1987 ◽  
Vol 95 ◽  
Author(s):  
He-Xiang Han ◽  
Bernard J. Feldman
Keyword(s):  
Thin Films ◽  
Carbon Nitride ◽  
Nitrogen Concentration ◽  
Optical And Electrical Properties ◽  
Photoluminescence Spectra ◽  
Degenerate Semiconductor ◽  
Undoped Material ◽  
Plasma Decomposition ◽  
P Type ◽  
Amorphous Hydrogenated Carbon

AbstractAmorphous hydrogenated carbon nitride thin films have been grown by plasma decomposition of a feedstock of CH4 and N2. In the films with higher nitrogen concentration, the infrared absorption spectra are dominated by NH2 modes and give strong evidence of a polymeric structure. The optical absorption and photoluminescence spectra show that nitrogen incorporation decreases the bandgap and increases the structural order of these thin films. The undoped material is an insulator with resistivities up to 1015Q cm, but when doped with iron, it becomes a p-type degenerate semiconductor.

Tunable optical and electrical properties of p-type Cu2O thin films

2021 ◽  
Author(s):  
Daniel A. Fentahun ◽  
Alekha Tyagi ◽  
Sugandha Singh ◽  
Prerna Sinha ◽  
Amodini Mishra ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Optical And Electrical Properties ◽  
Cu2o Thin Films ◽  
P Type

Optical and electrical properties of p-type zinc oxide thin films synthesized by ion beam assisted deposition

2005 ◽  
Vol 492 (1-2) ◽  
pp. 203-206 ◽  
Author(s):  
Zhi Yan ◽  
Zhi Tang Song ◽  
Wei Li Liu ◽  
Qing Wan ◽  
Fu Min Zhang ◽  
...  
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Electrical Properties ◽  
Ion Beam ◽  
Optical And Electrical Properties ◽  
Oxide Thin Films ◽  
Ion Beam Assisted Deposition ◽  
P Type

Nitrogen Effects on Optical and Electrical Properties of Amorphous Carbon

2010 ◽  
Vol 636-637 ◽  
pp. 423-429 ◽  
Author(s):  
M. Fathallah ◽  
N. Alassimi ◽  
N. Alzayed ◽  
R. Gharbi
Keyword(s):  
Electrical Properties ◽  
Amorphous Carbon ◽  
Carbon Nitride ◽  
Gas Mixture ◽  
Optical And Electrical Properties ◽  
Photoluminescence Spectra ◽  
Graphite Target ◽  
Triple Bonds ◽  
C And N ◽  
Amorphous Carbon Nitride

Optical and electrical properties amorphous carbon nitride (a-CN) has been investigated on films deposited by reactive R.F. sputtering source with a graphite target. The amorphous carbon nitride samples were prepared under a gas mixture of nitrogen (N2) and /or Argon (Ar).The optical transitions are governed by the  and * electronic state distributions, related to sp2- and sp1-hybridized C and N atoms. Specific lonepair electronic states arise from groups (CN) with sp1-hybridized C atoms, which may form C≡N triple bonds or —N=C=N— longer chains. Photoluminescence spectra show a maximum around 650 nm. Two conduction regimes at high and low temperature are found in a-CN samples. The corresponding activation energies decrease with the increase of target voltage.

Defects in CdTe-Based Photodetectors

1999 ◽  
Vol 607 ◽  
Author(s):  
V. Valdna
Keyword(s):  
Thin Films ◽  
Optoelectronic Properties ◽  
High Resistivity ◽  
Photoluminescence Spectra ◽  
Type Conductivity ◽  
Complex Defect ◽  
Neutral Defect ◽  
P Type ◽  
Charged Defects ◽  
Thick Layers

AbstractThe photoluminescence spectra, defect composition and optoelectronic properties of chlorine doped CdTe monocrystals, thick layers and thin films are investigated. It is supposed that the complex defect (VCd-2ClTe) is a neutral defect that causes high resistivity of Cl doped CdTe. This complex can dissociate into two charged defects (VCd-ClTe) and ClTe at 300 K. Acentre (VCd-ClTe) is a stable defect that is responsible for p-type conductivity of Cl doped CdTe. Depending on the C1 concentration high resistivity, high photoconductivity or high p-type conductivity can be formed in CdTe that is only chlorine doped.

Effect of Ag Doping on Structural, Optical and Electrical Properties of SnS:Ag Thin Films Prepared by Pulse Electroposition

2009 ◽  
Vol 60-61 ◽  
pp. 105-109 ◽  
Author(s):  
Yong Li Yang ◽  
Shu Ying Cheng ◽  
Song Lin Lai
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Optical And Electrical Properties ◽  
Silver Doping ◽  
Electro Deposition ◽  
Ag Doping ◽  
Semiconducting Properties ◽  
Primary Composition ◽  
High Absorption Coefficient ◽  
P Type

Silver-doping in SnS films can improve the semiconducting properties of SnS films. Based on our previous research, SnS:Ag thin films were deposited on ITO coated glass by pulse electro-deposition in order to study their structural, optical and electrical properties. SnS:Ag thin films were characterized with X-ray diffraction (XRD) , Scanning Electron Microscope (SEM) and some other methods. The primary composition of the films is SnS, but maybe there is a little quantity of SnS2, Ag8SnS6 and other compounds. The doped films exhibit good crystallization with big grain size. They have an optical gap of 1.66~1.89eV and a high absorption coefficient (α＞5×104cm-1). Hall measurement has shown that all the samples are of p-type conduction with low resistivity of the order of 10-3Ω•cm, and the carrier concentration increases to 1019cm-3 after Ag-doping. In conclusion, the semiconducting properties of the SnS films have been improved by silver-doping. Thus, SnS:Ag thin films can be used as solar cells absorbers.

Study on Fabrication and Properties of Copper-Tin-Oxide Thin Films

2009 ◽  
Vol 79-82 ◽  
pp. 787-790
Author(s):  
Ti Ning ◽  
Feng Ji ◽  
Jin Ma ◽  
Zhen Guo Song ◽  
Xu An Pei ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Magnetron Sputtering ◽  
Tin Oxide ◽  
Perovskite Structure ◽  
Annealing Temperature ◽  
Optical And Electrical Properties ◽  
Oxide Thin Films ◽  
Thermal Probe ◽  
P Type

Copper-tin-oxide thin films have been prepared on quartz substrates by the magnetron sputtering method. The structural,optical and electrical properties were investigated. The prepared samples were amorphous, CuSnO3 single crystalline grains with perovskite structure were observed after annealing temperature was above 530°C. The optical and electrical properties had great dependence with reactive gas pressure and annealing temperature. Thermal probe reveals p type conductivity of some samples. Keywords: Magnetron sputtering, CuSnO3, Perovskite structure

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