Defects in CdTe-Based Photodetectors

1999 ◽  
Vol 607 ◽  
Author(s):  
V. Valdna

AbstractThe photoluminescence spectra, defect composition and optoelectronic properties of chlorine doped CdTe monocrystals, thick layers and thin films are investigated. It is supposed that the complex defect (VCd-2ClTe) is a neutral defect that causes high resistivity of Cl doped CdTe. This complex can dissociate into two charged defects (VCd-ClTe) and ClTe at 300 K. Acentre (VCd-ClTe) is a stable defect that is responsible for p-type conductivity of Cl doped CdTe. Depending on the C1 concentration high resistivity, high photoconductivity or high p-type conductivity can be formed in CdTe that is only chlorine doped.

2012 ◽  
Vol 100 (6) ◽  
pp. 062102 ◽  
Author(s):  
Z. Q. Yao ◽  
B. He ◽  
L. Zhang ◽  
C. Q. Zhuang ◽  
T. W. Ng ◽  
...  

2015 ◽  
Vol 17 (26) ◽  
pp. 16705-16708 ◽  
Author(s):  
Wenzhe Niu ◽  
Hongbin Xu ◽  
Yanmin Guo ◽  
Yaguang Li ◽  
Zhizhen Ye ◽  
...  

The S dopants in S–N co-doped ZnO contribute to easier doping and p-type conductivity, as concluded by experiment and calculations.


2017 ◽  
Vol 400 ◽  
pp. 312-317 ◽  
Author(s):  
Ramanjaneyulu Mannam ◽  
E. Senthil Kumar ◽  
Nandita DasGupta ◽  
M.S. Ramachandra Rao

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