scholarly journals The structure，optical and electrical properties of Li-N dual-acceptor doped p-type ZnO thin films prepared by sol-gel method

2010 ◽  
Vol 59 (5) ◽  
pp. 3473
Author(s):  
Wang De-Yi ◽  
Gao Shu-Xia ◽  
Li Gang ◽  
Zhao Ming
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Sol Gel ◽  
Zno Thin Films ◽  
Optical And Electrical Properties ◽  
Gel Method ◽  
Sol Gel Method ◽  
P Type

Microstructural, Optical and Electrical Properties of ZnO:Sn Thin Films Deposited by Sol-Gel Method

2013 ◽  
Vol 652-654 ◽  
pp. 519-522
Author(s):  
Jun Chen ◽  
Yue Hui Hu ◽  
Hong Hao Hu ◽  
Yi Chuan Chen
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Sol Gel ◽  
Hexagonal Structure ◽  
Optical And Electrical Properties ◽  
Axis Orientation ◽  
Gel Method ◽  
Sol Gel Method ◽  
Sn Doping ◽  
Glass Substrates

Transparent thin films of Sn-doped ZnO (ZnO:Sn) were deposited onto silica glass substrates by the sol–gel method. The effect of different Sn doping on the crystallinity, structural, optical and electrical properties of ZnO:Sn thin films were investigated by XRD, SEM, UV-VIS spectrophotometer and four-point probe method respectively. Among all of ZnO:Sn thin films in this paper, Sn-doped with 2 at.% exhibited the best properties, the surface demonstrate an accumulative crystallization and hexagonal structure, with a high-preferential c-axis orientation, namely an average transmittance of 90% and the resistivity of 19.6 Ω·cm.

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