scholarly journals Boron Nitride: Composition, Optical Properties, and Mechanical Behavior

1987 ◽  
Vol 93 ◽  
Author(s):  
John J. Pouch ◽  
Samuel A. Alterovitz ◽  
Kazuhisa Miyoshi ◽  
Joseph O. Warner
Keyword(s):  
Boron Nitride ◽  
Photoelectron Spectroscopy ◽  
Ion Beam ◽  
Hexagonal Phase ◽  
Film Structure ◽  
Index Of Refraction ◽  
The Coefficient Of Friction ◽  
Germanium Silicon ◽  
Boron Nitride Films ◽  
Beam Deposition

ABSTRACTA low energy ion beam deposition technique was used to grow boron nitride films on quartz, germanium, silicon, gallium arsenide, and indium phosphide. The film structure was amorphous with evidence of a hexagonal phase. The peak boron concentration was 82 at %. The carbon and oxygen Impurities were in the 5 to 8 at % range. Boron-nitrogen and boron-boron bonds were revealed by x-ray photoelectron spectroscopy. The index of refraction varied from 1.65 to 1.67 for films deposited on the III–V compound semiconductors. The coefficient of friction for boron nitride in sliding contact with diamond was less than 0.1. The substrate was silicon.

Cubic boron nitride films grown by low energy B+ and N+ ion beam deposition

1995 ◽  
Vol 67 (1) ◽  
pp. 46-48 ◽  
Author(s):  
H. Hofsäss ◽  
C. Ronning ◽  
U. Griesmeier ◽  
M. Gross ◽  
S. Reinke ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Ion Beam ◽  
Cubic Boron Nitride ◽  
Low Energy ◽  
Ion Beam Deposition ◽  
Boron Nitride Films ◽  
Beam Deposition

Characterization of cubic boron nitride films grown by mass separated ion beam deposition

1996 ◽  
pp. 153-158
Author(s):  
H. Hofsäss ◽  
C. Ronning ◽  
U. Griesmeier ◽  
M. Gross ◽  
S. Reinke ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Ion Beam ◽  
Cubic Boron Nitride ◽  
Ion Beam Deposition ◽  
Boron Nitride Films ◽  
Beam Deposition

Synthesis of Boron Nitride Film by Ion Beam Deposition

1991 ◽  
Vol 223 ◽  
Author(s):  
Z. Xia ◽  
G. L. Zhang ◽  
W. L. Lin
Keyword(s):  
Boron Nitride ◽  
Photoelectron Spectroscopy ◽  
Ion Beam ◽  
Cubic Boron Nitride ◽  
Nitride Film ◽  
Ion Beam Deposition ◽  
Nitrogen Ions ◽  
Argon Ions ◽  
Beam Deposition ◽  
Good Agreement

ABSTRACTThin films of cubic boron nitride (c-BN) together with hexagonal one (h-BN) have been prepared by using the ion beam deposition method (IBD). Boron was deposited onto silicon wafers by a sputtering beam of 600 eV argon ions, and the growing films were simultaneously irradiated by nitrogen ions at 200 eV. The films were subsequently characterized by infrared absorption (IR) spectroscopy, X-ray photoelectron spectroscopy (XPS) and microhardness measurements. The IR spectra show the evidence of BN layer formation by the absorption peaks at about 1350, 1120 and 810 cm−1, which are in good agreement with those of bulk BN.

Thin Film Growth of Group III Nitrides by Mass Separated Ion Beam Deposition

1996 ◽  
Vol 449 ◽  
Author(s):  
C. Ronning ◽  
E. Dreher ◽  
H. Feldermann ◽  
M. Sebastian ◽  
J. Zweck ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Film Growth ◽  
Ion Beam ◽  
Group Iii Nitrides ◽  
Film Structure ◽  
Bond Ionicity ◽  
Group Iii ◽  
Ion Beam Deposition ◽  
The One ◽  
Beam Deposition

ABSTRACTWe have grown gallium nitride (GaN), aluminum nitride (AIN) and boron nitride (BN) thin films by mass separated ion beam deposition. All deposited films were found to be almost stoichiometric. AIN and GaN films are crystalline even after room temperature deposition whereas for the formation of crystalline boron nitride temperatures above 150°C are necessary. The influence on the phase formation and the film structure of ion energy and substrate temperature on the one hand, and bond ionicity on the other hand, was investigated for these three systems.

Carbon Film Deposition On Silicon Using Low Energy Ion Beams

1991 ◽  
Vol 223 ◽  
Author(s):  
Qin Fuguang ◽  
Yao Zhenyu ◽  
Ren Zhizhang ◽  
S.-T. Lee ◽  
I. Bello ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Ion Beam ◽  
Carbon Film ◽  
Carbon Films ◽  
Film Deposition ◽  
Ion Energy ◽  
Transmission Electron ◽  
Higher Temperature ◽  
Post Implantation ◽  
Beam Deposition

ABSTRACTDirect ion beam deposition of carbon films on silicon in the ion energy range of 15–500eV and temperature range of 25–800°C has been studied using mass selected C+ ions under ultrahigh vacuum. The films were characterized with X-ray photoelectron spectroscopy, Raman spectroscopy, and transmission electron microscopy and diffraction analysis. Films deposited at room temperature consist mainly of amorphous carbon. Deposition at a higher temperature, or post-implantation annealing leads to formation of microcrystalline graphite. A deposition temperature above 800°C favors the formation of microcrystalline graphite with a preferred orientation in the (0001) direction. No evidence of diamond formation was observed in these films.

Field emission properties of nitrogen-doped diamond-like carbon films deposited by direct metal ion beam deposition

2001 ◽  
Vol 697 ◽  
Author(s):  
Kie Moon Song ◽  
Namwoong Paik ◽  
Steven Kim ◽  
Daeil Kim ◽  
Seongjin Kim ◽  
...  
Keyword(s):  
Field Emission ◽  
Photoelectron Spectroscopy ◽  
Metal Ion ◽  
Nitrogen Doping ◽  
Ion Beam ◽  
Diamond Like Carbon ◽  
Emission Data ◽  
Nitrogen Doped ◽  
Ion Beam Deposition ◽  
Beam Deposition

AbstractNitrogen-doped diamond-like carbon (DLC) films were deposited on a silicon substrate by direct metal ion beam deposition (DMIBD). Partial pressures of nitrogen gas were changed to get different compositions of nitrogen in the DLC films. The composition and surface morphology of the films were examined using X-ray photoelectron spectroscopy (XPS) and atomic force microscope (AFM). Effect of nitrogen doping on field emission property was studied. The field emission data indicated that the nitrogen doping lowered the turn-on field and increase the current density. It was believed that doping of nitrogen into the DLC film plays an important role in enhancement of the field emission. This enhancement of field emission could be explained by the improvement of electron transport through nitrogen-dope DLC layer.

Structure, Optical and Electrical Properties of Pulsed Laser Deposited and Ion Beam Deposited CNx Films

1997 ◽  
Vol 498 ◽  
Author(s):  
K. F. Chan ◽  
X.-A. Zhao ◽  
C. W. Ong
Keyword(s):  
Electrical Conductivity ◽  
Electrical Properties ◽  
Ion Beam ◽  
Pulsed Laser ◽  
Film Structure ◽  
Laser Deposition ◽  
Optical And Electrical Properties ◽  
Ion Beam Deposition ◽  
Valence Bands ◽  
Beam Deposition

ABSTRACTCNx films were deposited using pulsed laser deposition (PLD) and ion beam deposition (IBD). The PLD films deposited at substrate temperature Ts = 25°C and high N2 partial pressure have the highest N content (fN) and polymerlike structure, accompanied by large band gap (Eg) and low electrical conductivity (σroom). The rise in Ts lowers fN and induces graphitization of the film structure, so Eg reduces and σroom increases. IBD (with and without N2+ assist) films are graphitic. Higher Ts further enhances the graphitization of the film structure, such that the conduction and valence bands overlap, and σroom approaches to that of graphite. No evidence was found to show successful formation of the hypothetical β-C3N4 phase in the films.

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