Cubic boron nitride films grown by low energy B+ and N+ ion beam deposition

1995 ◽  
Vol 67 (1) ◽  
pp. 46-48 ◽  
Author(s):  
H. Hofsäss ◽  
C. Ronning ◽  
U. Griesmeier ◽  
M. Gross ◽  
S. Reinke ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Ion Beam ◽  
Cubic Boron Nitride ◽  
Low Energy ◽  
Ion Beam Deposition ◽  
Boron Nitride Films ◽  
Beam Deposition

Characterization of cubic boron nitride films grown by mass separated ion beam deposition

1996 ◽  
pp. 153-158
Author(s):  
H. Hofsäss ◽  
C. Ronning ◽  
U. Griesmeier ◽  
M. Gross ◽  
S. Reinke ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Ion Beam ◽  
Cubic Boron Nitride ◽  
Ion Beam Deposition ◽  
Boron Nitride Films ◽  
Beam Deposition

Synthesis of Boron Nitride Film by Ion Beam Deposition

1991 ◽  
Vol 223 ◽  
Author(s):  
Z. Xia ◽  
G. L. Zhang ◽  
W. L. Lin
Keyword(s):  
Boron Nitride ◽  
Photoelectron Spectroscopy ◽  
Ion Beam ◽  
Cubic Boron Nitride ◽  
Nitride Film ◽  
Ion Beam Deposition ◽  
Nitrogen Ions ◽  
Argon Ions ◽  
Beam Deposition ◽  
Good Agreement

ABSTRACTThin films of cubic boron nitride (c-BN) together with hexagonal one (h-BN) have been prepared by using the ion beam deposition method (IBD). Boron was deposited onto silicon wafers by a sputtering beam of 600 eV argon ions, and the growing films were simultaneously irradiated by nitrogen ions at 200 eV. The films were subsequently characterized by infrared absorption (IR) spectroscopy, X-ray photoelectron spectroscopy (XPS) and microhardness measurements. The IR spectra show the evidence of BN layer formation by the absorption peaks at about 1350, 1120 and 810 cm−1, which are in good agreement with those of bulk BN.

Multilayer growth by low energy ion beam deposition

1999 ◽  
Vol 198-199 ◽  
pp. 731-733 ◽  
Author(s):  
D.E Joyce ◽  
N.D Telling ◽  
J.A Van den Berg ◽  
D.G Lord ◽  
P.J Grundy
Keyword(s):  
Ion Beam ◽  
Low Energy ◽  
Ion Beam Deposition ◽  
Beam Deposition

scholarly journals FexSi grown with mass-analyzed low-energy dual ion beam deposition

2004 ◽  
Vol 263 (1-4) ◽  
pp. 143-147
Author(s):  
Lifeng Liu ◽  
Nuofu Chen ◽  
Fuqiang Zhang ◽  
Chenlong Chen ◽  
Yanli Li ◽  
...  
Keyword(s):  
Ion Beam ◽  
Low Energy ◽  
Ion Beam Deposition ◽  
Beam Deposition

Growth of diamond and diamond-like films using a low energy ion beam

1998 ◽  
Vol 13 (8) ◽  
pp. 2315-2320 ◽  
Author(s):  
Y. P. Guo ◽  
K. L. Lam ◽  
K. M. Lui ◽  
R. W. M. Kwok ◽  
K. C. Hui
Keyword(s):  
Ion Beam ◽  
Chemical Vapor ◽  
Carbon Films ◽  
Low Energy ◽  
Hydrogen Passivation ◽  
Heteroepitaxial Growth ◽  
Ion Beam Deposition ◽  
Additional Control ◽  
Strain Release ◽  
Beam Deposition

Ion beam deposition provides an additional control of ion beam energy over the chemical vapor deposition methods. We have used a low energy ion beam of hydrogen and carbon to deposit carbon films on Si(100) wafers. We found that graphitic films, amorphous carbon films, and oriented diamond microcrystallites could be obtained separatedly at different ion beam energies. The mechanism of the formation of the oriented diamond microcrystallites was suggested to include three components: strain release after ion bombardment, hydrogen passivation of sp3 carbon, and hydrogen etching. Such a process can be extended to the heteroepitaxial growth of diamond films.

Investigations of Low-Temperature Epitaxy, Ion Damage, and Reactive-Ion Cleaning Utilizing Ion Beam Deposition

1986 ◽  
Vol 74 ◽  
Author(s):  
B. R. Appleton ◽  
R. A. Zuhr ◽  
T. S. Noggle ◽  
N. Herbots ◽  
S. J. Pennycook
Keyword(s):  
Low Temperature ◽  
Ion Beam ◽  
Low Energy ◽  
Ion Scattering ◽  
Cross Sectional ◽  
Ion Beam Deposition ◽  
Epitaxial Deposition ◽  
Ion Damage ◽  
Low Temperature Epitaxy ◽  
Beam Deposition

AbstractThe technique of ion beam deposition (IBD) is utilized to investigate low-energy, ion-induced damage on Si and Ge; to study reactive ion cleaning of Si and Ge; to fabricate amorphous isotopic heterostructures; and to fabricate and study the low-temperature epitaxial deposition of 74Ge on Ge(100), 30Si on Si(100), and 74Ge on Si(100). The techniques of ion scattering/channeling and cross-sectional TEM are combined to characterize the deposits.

Sign in / Sign up

Export Citation Format

Share Document