Thin Film Growth of Group III Nitrides by Mass Separated Ion Beam Deposition

1996 ◽  
Vol 449 ◽  
Author(s):  
C. Ronning ◽  
E. Dreher ◽  
H. Feldermann ◽  
M. Sebastian ◽  
J. Zweck ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Film Growth ◽  
Ion Beam ◽  
Group Iii Nitrides ◽  
Film Structure ◽  
Bond Ionicity ◽  
Group Iii ◽  
Ion Beam Deposition ◽  
The One ◽  
Beam Deposition

ABSTRACTWe have grown gallium nitride (GaN), aluminum nitride (AIN) and boron nitride (BN) thin films by mass separated ion beam deposition. All deposited films were found to be almost stoichiometric. AIN and GaN films are crystalline even after room temperature deposition whereas for the formation of crystalline boron nitride temperatures above 150°C are necessary. The influence on the phase formation and the film structure of ion energy and substrate temperature on the one hand, and bond ionicity on the other hand, was investigated for these three systems.

Structure, Optical and Electrical Properties of Pulsed Laser Deposited and Ion Beam Deposited CNx Films

1997 ◽  
Vol 498 ◽  
Author(s):  
K. F. Chan ◽  
X.-A. Zhao ◽  
C. W. Ong
Keyword(s):  
Electrical Conductivity ◽  
Electrical Properties ◽  
Ion Beam ◽  
Pulsed Laser ◽  
Film Structure ◽  
Laser Deposition ◽  
Optical And Electrical Properties ◽  
Ion Beam Deposition ◽  
Valence Bands ◽  
Beam Deposition

ABSTRACTCNx films were deposited using pulsed laser deposition (PLD) and ion beam deposition (IBD). The PLD films deposited at substrate temperature Ts = 25°C and high N2 partial pressure have the highest N content (fN) and polymerlike structure, accompanied by large band gap (Eg) and low electrical conductivity (σroom). The rise in Ts lowers fN and induces graphitization of the film structure, so Eg reduces and σroom increases. IBD (with and without N2+ assist) films are graphitic. Higher Ts further enhances the graphitization of the film structure, such that the conduction and valence bands overlap, and σroom approaches to that of graphite. No evidence was found to show successful formation of the hypothetical β-C3N4 phase in the films.

The Effects of Ion Energy on Carbon and Tungsten Films Fabricated by Direct Ion Beam Deposition and Ion Beam Sputtering Deposition

1991 ◽  
Vol 223 ◽  
Author(s):  
I. Kataoka ◽  
K. Ito ◽  
N. Hoshi ◽  
T. Yonemitsu ◽  
K. Etoh ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Ion Beam ◽  
Amorphous Structure ◽  
Film Structure ◽  
Ion Beam Sputtering ◽  
Ion Energy ◽  
Sputtering Deposition ◽  
Ion Beam Deposition ◽  
Beam Sputtering ◽  
Beam Deposition

ABSTRACTThe x-ray reflectivity and surface morphology of C/W multilayers fabricated by ion beam sputtering (IBS) method was evaluated. Also the surface roughness and amorphous structure of C and W films fabricated by direct ion beam deposition (DIBD) method were evaluated as a function of ion energy. The reflectivity was measured by the C-K line (4.47nm) and STM was used for surface roughness measurement and root-mean-square value of correlation function of the RHEED pattern was used for evaluation of amorphous structure. The reflectivity of C/W multilayer was about 69% of the theoretical one, and micro-columnar structures were observed from STM images. The film structure and surface roughness of DIBD film were changed with the depositing ion energy. The surface roughness of films becomes smaller as the depositing energy becomes higher in the energy range from 20 to 140eV.

Germanium and Silicon Film Growth by Low-Energy Ion Beam Deposition

1977 ◽  
Vol 16 (2) ◽  
pp. 245-251 ◽  
Author(s):  
Kunihiro Yagi ◽  
Shozo Tamura ◽  
Takashi Tokuyama
Keyword(s):  
Film Growth ◽  
Ion Beam ◽  
Silicon Film ◽  
Low Energy ◽  
Ion Beam Deposition ◽  
Beam Deposition

Cubic boron nitride films grown by low energy B+ and N+ ion beam deposition

1995 ◽  
Vol 67 (1) ◽  
pp. 46-48 ◽  
Author(s):  
H. Hofsäss ◽  
C. Ronning ◽  
U. Griesmeier ◽  
M. Gross ◽  
S. Reinke ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Ion Beam ◽  
Cubic Boron Nitride ◽  
Low Energy ◽  
Ion Beam Deposition ◽  
Boron Nitride Films ◽  
Beam Deposition

Tem and X-Ray Investigation of Single Crystal-Like Zirconia Films Fabricated by Dual Ion Beam Deposition

1995 ◽  
Vol 396 ◽  
Author(s):  
Kevin G. Ressler ◽  
Neville Sonnenberg ◽  
Michael J. Cima
Keyword(s):  
Single Crystal ◽  
Quartz Substrate ◽  
Ion Beam ◽  
Film Plane ◽  
Film Structure ◽  
Cross Sectional ◽  
X Ray ◽  
Ion Beam Deposition ◽  
Amorphous Quartz ◽  
Beam Deposition

AbstractSingle crystal-like yttria-stabilized zirconia (YSZ) thin films have been deposited on amorphous quartz, polycrystalline zirconia, single crystal Si, and Hastelloy substrates using dual ion beam deposition (IBAD). These films are highly crystallographically aligned both normal to and within the film plane. The films are deposited at low substrate temperatures (<200°C), and the film orientation is substrate independent. θ-2θ X-ray diffraction, X-ray rocking curves, X-ray pole figures and X-ray phi scans are used to evaluate the film structure. High resolution cross-sectional TEM is used to examine the evolution of crystallographic film alignment on an amorphous quartz substrate. The data suggest that the evolution of biaxial alignment is nucleation controlled under these conditions.

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