Raman Scattering from Rapid Thermally Annealed Tungsten Silicide

1987 ◽  
Vol 92 ◽  
Author(s):  
Samhita Dasgupta Samhita Dasgupta ◽  
Sandeep Kumar ◽  
Howard E. Jackson ◽  
Joseph T. Boyd
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Raman Scattering ◽  
Rutherford Backscattering ◽  
Scattering Data ◽  
Silicon Substrates ◽  
Tungsten Silicide ◽  
Resistivity Measurements ◽  
Sputter Deposited ◽  
Scanning Electron

ABSTRACTRaman Scattering as a technique for studying the formation of tungsten silicide is presented. The tungsten silicide films were formed by rapid thermally annealing tungsten films that were sputter deposited on silicon substrates. The Raman scattering data is correlated with data from resistivity measurements, Auger and Rutherford Backscattering measurements, and scanning electron microscopy.

scholarly journals Development of Tin Oxide-Based Nanosensors for Electronic Nose Environmental Applications

Biosensors ◽  
2019 ◽  
Vol 9 (1) ◽  
pp. 21 ◽  
Author(s):  
Isabel Sayago ◽  
Manuel Aleixandre ◽  
José Pedro Santos
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Low Temperature ◽  
Tin Oxide ◽  
Chemical Sensors ◽  
High Sensitivity ◽  
Silicon Substrates ◽  
Electronic Noses ◽  
Pollutant Detection ◽  
Scanning Electron

Tin oxide nanofibres (NFs) are used as nanosensors in electronic noses. Their performance is compared to that of oxide commercial chemical sensors for pollutant detection. NFs were grown by electrospinning and deposited onto silicon substrates with integrated micro-hotplates. NF morphology was characterized by scanning electron microscopy (SEM). The NFs presented high sensitivity to NO2 at low temperature.

Laser Pulse Melting of Metals: Epitaxy and Allotropy

1980 ◽  
Vol 1 ◽  
Author(s):  
L. Buene ◽  
E. N. Kaufmann ◽  
C. M. Preece ◽  
C. W. Draper
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Surface Layer ◽  
High Temperature ◽  
Laser Pulse ◽  
Single Crystals ◽  
Laser Power ◽  
Rutherford Backscattering ◽  
Scanning Electron ◽  
Crystallographic Orientations

ABSTRACTLaser pulse melted single crystals of several metals have been examined by the Rutherford backscattering/channeling technique and with optical and scanning electron microscopy. Metals belonging to the three major structure groups; fcc (Ni, Pd, Rh); bcc(Mo, Nb, W, Fe); and hcp (Be, Ti, Re) have been studied at various laser power levels and in different crystallographic orientations. Of these cases, Be, Ti and Fe show high temperature allotropes which are expected to influence the character of the resolidified surface layer.

Thermal Conductivity of Boron Carbides

1987 ◽  
Vol 97 ◽  
Author(s):  
Marvin Moss
Keyword(s):  
Electron Microscopy ◽  
Thermal Conductivity ◽  
Scanning Electron Microscopy ◽  
Raman Spectroscopy ◽  
Temperature Dependence ◽  
Rutherford Backscattering ◽  
Rutherford Backscattering Spectroscopy ◽  
Theoretical Density ◽  
Increasing Temperature ◽  
Scanning Electron

ABSTRACTThe thermal conductivity, k, of boron carbides of various B/C ratios, two modes of preparation – hot pressed and carbothermic, and two isotopic variants of boron – 11B and normal boron 10.81B, was measured from 300 to 1023 K. The density and composition of the samples were reflected in the magnitude and temperature dependence of k, and were investigated further with scanning electron microscopy, Rutherford backscattering spectroscopy, and Raman spectroscopy. While lower than theoretical density in B4C reduces k, the characteristic monotonic decline of k with increasing temperature is retained. This k-vs.-T behavior distinguishes B4C from material with larger B/C ratios for which the temperature dependence is essentially nil.

scholarly journals Filmes de diamante CVD em grandes áreas obtidos por crescimentos sucessivos em etapas

2008 ◽  
Vol 13 (3) ◽  
pp. 569-578 ◽  
Author(s):  
A.R. Alves ◽  
A. Amorim ◽  
J. Eichenberger Neto ◽  
V.J. Trava-Airoldi ◽  
E.J. Corat ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Chemical Vapor Deposition ◽  
Raman Scattering ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Raman Scattering Spectroscopy ◽  
Scanning Electron

Buscou-se a redução da tensão intrínseca causada pelas impurezas que se agregam no processo de crescimento de um filme de diamante obtido por deposição química a partir da fase vapor (CVD, do inglês Chemical Vapor Deposition) em um reator de filamento quente (HFCVD), sobre um substrato de silício <100> de 250 µm de espessura em uma superfície de deposição de grande área (45 cm²), através da imersão da amostra, em uma solução saturada de H2SO4 e CrO3 e, em seguida, em uma solução 1:1 de H2O2:NH4OH. Após esse procedimento, nova etapa de crescimento era realizada. O filme de diamante CVD foi identificado e caracterizado por espectroscopia de espalhamento Raman (RSS, do inglês Raman Scattering Spectroscopy) e microscopia eletrônica de varredura (SEM, do inglês Scanning Electron Microscopy). A aplicação dessa técnica mostrou bons resultados, uma vez que, em relação a resultados obtidos anteriormente, se duplicou a espessura do filme de diamante CVD depositado, obtendo menor tensão residual sobre o filme de diamante. Foram obtidos filmes de diamante CVD de espessura de 60 mm, com alta qualidade e uniformidade.

Real-Time FTIR Etch Depth Measurements in Passive Integrated Silicon Substrates

2007 ◽  
Author(s):  
F. Roullier ◽  
B. Domengès ◽  
P. Poirier ◽  
J.P. Blanvillain
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Real Time ◽  
Cross Sections ◽  
Effective Index ◽  
Etch Depth ◽  
Silicon Substrates ◽  
Hole Depth ◽  
Good Evaluation ◽  
Scanning Electron

Abstract This paper deals with real-time FTIR (Fourier Transform Infrared Reflectometry) etch depth measurements performed on passive integrated silicon substrates. High-density trench capacitors are non-destructively characterized using an FTIR Michelson type spectrometer. Based on effective medium approximations, an effective index associated to the capacitor layer is introduced which allows a good evaluation of the capacitor hole depth. Obtained results correlate well with those from SEM (Scanning Electron Microscopy) measurements performed on cross-sections, on a range going from 12µm to 30µm depth.

STRUCTURAL AND OPTICAL FEATURES OF POROUS SILICON PREPARED BY ELECTROCHEMICAL ANODIC ETCHING

2009 ◽  
Vol 16 (01) ◽  
pp. 93-97 ◽  
Author(s):  
L. S. CHUAH ◽  
Z. HASSAN ◽  
F. K. YAM ◽  
H. ABU HASSAN
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Porous Silicon ◽  
Raman Scattering ◽  
Raman Spectra ◽  
Raman Peak ◽  
Sem Images ◽  
Anodic Etching ◽  
Etching Duration ◽  
Scanning Electron

Porous silicon (PS) samples were prepared by electrochemical anodic etching of n-type (111) silicon wafers in HF solution. The structural, optical, and chemical features of the PS were investigated in terms of different etching durations. The porous samples were investigated by scanning electron microscopy (SEM), photoluminescence (PL), and Raman scattering. SEM images indicated that the pores increased with the etching duration; however, the etching duration has significant effect on the shape of the pores. PL measurements revealed that the porosity-induced PL intensity enhancement was only observed in the porous samples. Raman spectra showed shifting of PS Raman peak to lower frequency relative to non-porous silicon Raman peak.

Sem Observation of Growth and Defect Formation of Heteroepitaxially grown sic on (100) Silicon

1989 ◽  
Vol 162 ◽  
Author(s):  
B. Molnar ◽  
L. M. Shirey
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Plasma Etching ◽  
Defect Formation ◽  
Silicon Substrates ◽  
Growth Feature ◽  
Growth Features ◽  
Characteristic Growth ◽  
Sic Films ◽  
Scanning Electron

ABSTRACTSingle crystal, cubic SiC films used in this study were grown by a two step CVD process on (100) oriented silicon substrates. The two surfaces of such grown SiC films are different. The SiC surface at the Si/SiC interface is more conductive than the SiC/air surface. This Si/SiC surface appears smooth under optical microscopy, but Scanning Electron Microscopy (SEM) reveals characteristic “growth features” on it. Each growth feature protrudes from the smooth SiC surface, and most often it either fills or borders the rectangular shallow pyramids present on the (100) Si surfaces. Plasma etching of the SiC at the Si/SiC interface creates cavities with vertical boundaries. Some of the cavities have been traced to the original location of some growth features.

Thin-film reactions of Al with Co, Cr, Mo, Ta, Ti, and W

1989 ◽  
Vol 4 (4) ◽  
pp. 815-820 ◽  
Author(s):  
E. G. Colgan ◽  
J. W. Mayer
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Phase Diagrams ◽  
Refractory Metals ◽  
Rutherford Backscattering ◽  
Phase Identification ◽  
X Ray Diffraction ◽  
X Ray ◽  
Scanning Electron

The thin-film interactions of Al with refractory metals (Co, Cr, Mo, Ta, Ti, and W) have been investigated. The composition and thickness of the reacted aluminide layers were determined by Rutherford backscattering and phase identification was made by x-ray diffraction. Scanning electron microscopy was used to examine the lateral uniformity. The initial aluminide phases to grow are the Al-rich phases: Co2Al9, Cr2Al13, MoAl12, TaAl3, TiAl3, and WAI12. These are the most Al-rich phases on the phase diagrams. The reaction temperatures varied between 350 and 525 °C.

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