Scanning electron microscopy investigations of the initial degradation mechanism of GaAs quantum well lasers grown on silicon substrates

1990 ◽  
Vol 68 (3) ◽  
pp. 937-942 ◽  
Author(s):  
R. B. Martins ◽  
P. Henoc ◽  
B. Akamatsu ◽  
G. Bartenlian ◽  
M. N. Charasse
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Quantum Well ◽  
Degradation Mechanism ◽  
Quantum Well Lasers ◽  
Silicon Substrates ◽  
Scanning Electron

scholarly journals Development of Tin Oxide-Based Nanosensors for Electronic Nose Environmental Applications

Biosensors ◽  
2019 ◽  
Vol 9 (1) ◽  
pp. 21 ◽  
Author(s):  
Isabel Sayago ◽  
Manuel Aleixandre ◽  
José Pedro Santos
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Low Temperature ◽  
Tin Oxide ◽  
Chemical Sensors ◽  
High Sensitivity ◽  
Silicon Substrates ◽  
Electronic Noses ◽  
Pollutant Detection ◽  
Scanning Electron

Tin oxide nanofibres (NFs) are used as nanosensors in electronic noses. Their performance is compared to that of oxide commercial chemical sensors for pollutant detection. NFs were grown by electrospinning and deposited onto silicon substrates with integrated micro-hotplates. NF morphology was characterized by scanning electron microscopy (SEM). The NFs presented high sensitivity to NO2 at low temperature.

scholarly journals Understanding the degradation mechanism of rechargeable lithium/sulfur cells: a comprehensive study of the sulfur–graphene oxide cathode after discharge–charge cycling

2014 ◽  
Vol 16 (32) ◽  
pp. 16931-16940 ◽  
Author(s):  
Xuefei Feng ◽  
Min-Kyu Song ◽  
Wayne C. Stolte ◽  
David Gardenghi ◽  
Duo Zhang ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Graphene Oxide ◽  
Degradation Mechanism ◽  
X Ray ◽  
Oxide Cathode ◽  
Lithium Sulfur ◽  
Scanning Electron ◽  
Comprehensive Study

Degradation mechanism of rechargeable lithium/sulfur-graphene oxide cell was studied using scanning electron microscopy and X-ray spectroscopy.

Real-Time FTIR Etch Depth Measurements in Passive Integrated Silicon Substrates

2007 ◽  
Author(s):  
F. Roullier ◽  
B. Domengès ◽  
P. Poirier ◽  
J.P. Blanvillain
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Real Time ◽  
Cross Sections ◽  
Effective Index ◽  
Etch Depth ◽  
Silicon Substrates ◽  
Hole Depth ◽  
Good Evaluation ◽  
Scanning Electron

Abstract This paper deals with real-time FTIR (Fourier Transform Infrared Reflectometry) etch depth measurements performed on passive integrated silicon substrates. High-density trench capacitors are non-destructively characterized using an FTIR Michelson type spectrometer. Based on effective medium approximations, an effective index associated to the capacitor layer is introduced which allows a good evaluation of the capacitor hole depth. Obtained results correlate well with those from SEM (Scanning Electron Microscopy) measurements performed on cross-sections, on a range going from 12µm to 30µm depth.

Scanning Electron Microscopy Cathodoluminescence Studies of Piezoelectric Fields in an InGaN Multiple Quantum Well Light Emitting Diode

2004 ◽  
Vol 831 ◽  
Author(s):  
Kristin L. Bunker ◽  
Roberto Garcia ◽  
Phillip E. Russell
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Quantum Well ◽  
Light Emitting Diode ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Light Emitting ◽  
Piezoelectric Field ◽  
Piezoelectric Fields ◽  
Scanning Electron

ABSTRACTScanning Electron Microscopy (SEM)-based Cathodoluminescence (CL) experiments were used to study the influence of piezoelectric fields on the optical and electrical properties of a commercial InGaN-based Multiple Quantum Well (MQW) Light Emitting Diode (LED). The existence and direction of a piezoelectric field in the InGaN-based LED was determined with voltage dependent SEM-CL experiments. The CL emission peak showed a blueshift followed by a redshift with increasing reverse bias due to the full compensation of the piezoelectric field. It was determined that the piezoelectric field points in the [000–1] direction and the magnitude was estimated to be approximately 1.0±0.2 MV/cm. SEM-CL carrier generation density variation and electroluminescence experiments were used to confirm the existence of a piezoelectric field in the InGaN-based MQW LED.

Sem Observation of Growth and Defect Formation of Heteroepitaxially grown sic on (100) Silicon

1989 ◽  
Vol 162 ◽  
Author(s):  
B. Molnar ◽  
L. M. Shirey
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Plasma Etching ◽  
Defect Formation ◽  
Silicon Substrates ◽  
Growth Feature ◽  
Growth Features ◽  
Characteristic Growth ◽  
Sic Films ◽  
Scanning Electron

ABSTRACTSingle crystal, cubic SiC films used in this study were grown by a two step CVD process on (100) oriented silicon substrates. The two surfaces of such grown SiC films are different. The SiC surface at the Si/SiC interface is more conductive than the SiC/air surface. This Si/SiC surface appears smooth under optical microscopy, but Scanning Electron Microscopy (SEM) reveals characteristic “growth features” on it. Each growth feature protrudes from the smooth SiC surface, and most often it either fills or borders the rectangular shallow pyramids present on the (100) Si surfaces. Plasma etching of the SiC at the Si/SiC interface creates cavities with vertical boundaries. Some of the cavities have been traced to the original location of some growth features.

Raman Scattering from Rapid Thermally Annealed Tungsten Silicide

1987 ◽  
Vol 92 ◽  
Author(s):  
Samhita Dasgupta Samhita Dasgupta ◽  
Sandeep Kumar ◽  
Howard E. Jackson ◽  
Joseph T. Boyd
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Raman Scattering ◽  
Rutherford Backscattering ◽  
Scattering Data ◽  
Silicon Substrates ◽  
Tungsten Silicide ◽  
Resistivity Measurements ◽  
Sputter Deposited ◽  
Scanning Electron

ABSTRACTRaman Scattering as a technique for studying the formation of tungsten silicide is presented. The tungsten silicide films were formed by rapid thermally annealing tungsten films that were sputter deposited on silicon substrates. The Raman scattering data is correlated with data from resistivity measurements, Auger and Rutherford Backscattering measurements, and scanning electron microscopy.

Fabrication of Nano-Grating by Focused Ion Beam / Scanning Electron Microscopy Dual-Beam System

2011 ◽  
Vol 483 ◽  
pp. 66-69 ◽  
Author(s):  
Bao Yin Yao ◽  
Hu Luo ◽  
Li Shuang Feng ◽  
Zhen Zhou ◽  
Rong Ming Wang ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Side Wall ◽  
Beam Current ◽  
Silicon Substrates ◽  
Dual Beam ◽  
Scanning Electron ◽  
Sub Wavelength

The uniform, well designed nano-gratings have been successfully fabricated by using a dual beam focused ion beam (FIB)/scanning electron microscopy (SEM) system on the silicon substrates coated with 15 nm thick Au layer. The nano-gratings were designed with period of 840 nm, groove of 425 nm and beam of 415 nm. By adjusting the FIB parameters of milling like beam current, dwell time and scanning model, the fabricated nano-gratings were uniform in width and the side wall had good verticality. The currently fabricated nano-gratings using focused ion beam can be adjusted to serve as sub-wavelength optical resonant sensor which can be extended to nano-grating accelerometer with resolution of 10-9g.

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