Sem Observation of Growth and Defect Formation of Heteroepitaxially grown sic on (100) Silicon

1989 ◽  
Vol 162 ◽  
Author(s):  
B. Molnar ◽  
L. M. Shirey
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Plasma Etching ◽  
Defect Formation ◽  
Silicon Substrates ◽  
Growth Feature ◽  
Growth Features ◽  
Characteristic Growth ◽  
Sic Films ◽  
Scanning Electron

ABSTRACTSingle crystal, cubic SiC films used in this study were grown by a two step CVD process on (100) oriented silicon substrates. The two surfaces of such grown SiC films are different. The SiC surface at the Si/SiC interface is more conductive than the SiC/air surface. This Si/SiC surface appears smooth under optical microscopy, but Scanning Electron Microscopy (SEM) reveals characteristic “growth features” on it. Each growth feature protrudes from the smooth SiC surface, and most often it either fills or borders the rectangular shallow pyramids present on the (100) Si surfaces. Plasma etching of the SiC at the Si/SiC interface creates cavities with vertical boundaries. Some of the cavities have been traced to the original location of some growth features.

Preparation and Characterisation of TiO2 Thick Films Fabricated by Electrophoretic Deposition

2007 ◽  
Vol 561-565 ◽  
pp. 2163-2166 ◽  
Author(s):  
H.Z. Abdullah ◽  
Charles C. Sorrell
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Grain Growth ◽  
Electrophoretic Deposition ◽  
Defect Formation ◽  
Titanium Foil ◽  
X Ray Diffraction ◽  
Voltage Range ◽  
X Ray ◽  
Scanning Electron

Rutile nano-powders were suspended in a solution of acetylacetone and iodine. The suspensions were electrophoretically deposited on titanium foil at a voltage range of 5-30 V over times of 5-120 s. The dried tapes then were sintered at 800°C for 2 h in flowing argon. Both the green and fired tapes were examined by field emission scanning electron microscopy, optical microscopy, X-ray diffraction, and Raman microspectroscopy. The thickness of the films depended on the voltage and the time of deposition. The sintered microstructures depended significantly on the thickness of the film, which was a function the proximity to the Ti/TiO2 interface. The interface is critical to the microstructure because it acts as the source of defect formation, which enhances sintering, grain growth, and grain facetting.

scholarly journals Development of Tin Oxide-Based Nanosensors for Electronic Nose Environmental Applications

Biosensors ◽  
2019 ◽  
Vol 9 (1) ◽  
pp. 21 ◽  
Author(s):  
Isabel Sayago ◽  
Manuel Aleixandre ◽  
José Pedro Santos
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Low Temperature ◽  
Tin Oxide ◽  
Chemical Sensors ◽  
High Sensitivity ◽  
Silicon Substrates ◽  
Electronic Noses ◽  
Pollutant Detection ◽  
Scanning Electron

Tin oxide nanofibres (NFs) are used as nanosensors in electronic noses. Their performance is compared to that of oxide commercial chemical sensors for pollutant detection. NFs were grown by electrospinning and deposited onto silicon substrates with integrated micro-hotplates. NF morphology was characterized by scanning electron microscopy (SEM). The NFs presented high sensitivity to NO2 at low temperature.

The use of plasma etching to reveal the internal structure of Nippostrongylus brasiliensis (Nematoda)

Parasitology ◽  
1983 ◽  
Vol 86 (3) ◽  
pp. 477-480 ◽  
Author(s):  
D. L. Lee ◽  
C. D. Nicholls
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Internal Structure ◽  
Plasma Etching ◽  
Middle Layer ◽  
Nippostrongylus Brasiliensis ◽  
Cortical Layers ◽  
Transmission Electron ◽  
Scanning Electron

SUMMARYPlasma etching has been used to strip away the cortical layers of the cuticle of adult Nippostrongylus brasiliensis to reveal the struts, with their supporting fibres, which are found in the fluid-filled middle layer of the cuticle, and the basal fibre layers. The etched specimens were studied by means of scanning electron microscopy. The results support earlier work, obtained by transmission electron microscopy, on the cuticle of this nematode. Plasma etching has been shown to have potential in studying the structure of nematodes.

Real-Time FTIR Etch Depth Measurements in Passive Integrated Silicon Substrates

2007 ◽  
Author(s):  
F. Roullier ◽  
B. Domengès ◽  
P. Poirier ◽  
J.P. Blanvillain
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Real Time ◽  
Cross Sections ◽  
Effective Index ◽  
Etch Depth ◽  
Silicon Substrates ◽  
Hole Depth ◽  
Good Evaluation ◽  
Scanning Electron

Abstract This paper deals with real-time FTIR (Fourier Transform Infrared Reflectometry) etch depth measurements performed on passive integrated silicon substrates. High-density trench capacitors are non-destructively characterized using an FTIR Michelson type spectrometer. Based on effective medium approximations, an effective index associated to the capacitor layer is introduced which allows a good evaluation of the capacitor hole depth. Obtained results correlate well with those from SEM (Scanning Electron Microscopy) measurements performed on cross-sections, on a range going from 12µm to 30µm depth.

Raman Scattering from Rapid Thermally Annealed Tungsten Silicide

1987 ◽  
Vol 92 ◽  
Author(s):  
Samhita Dasgupta Samhita Dasgupta ◽  
Sandeep Kumar ◽  
Howard E. Jackson ◽  
Joseph T. Boyd
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Raman Scattering ◽  
Rutherford Backscattering ◽  
Scattering Data ◽  
Silicon Substrates ◽  
Tungsten Silicide ◽  
Resistivity Measurements ◽  
Sputter Deposited ◽  
Scanning Electron

ABSTRACTRaman Scattering as a technique for studying the formation of tungsten silicide is presented. The tungsten silicide films were formed by rapid thermally annealing tungsten films that were sputter deposited on silicon substrates. The Raman scattering data is correlated with data from resistivity measurements, Auger and Rutherford Backscattering measurements, and scanning electron microscopy.

Fabrication of Nano-Grating by Focused Ion Beam / Scanning Electron Microscopy Dual-Beam System

2011 ◽  
Vol 483 ◽  
pp. 66-69 ◽  
Author(s):  
Bao Yin Yao ◽  
Hu Luo ◽  
Li Shuang Feng ◽  
Zhen Zhou ◽  
Rong Ming Wang ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Side Wall ◽  
Beam Current ◽  
Silicon Substrates ◽  
Dual Beam ◽  
Scanning Electron ◽  
Sub Wavelength

The uniform, well designed nano-gratings have been successfully fabricated by using a dual beam focused ion beam (FIB)/scanning electron microscopy (SEM) system on the silicon substrates coated with 15 nm thick Au layer. The nano-gratings were designed with period of 840 nm, groove of 425 nm and beam of 415 nm. By adjusting the FIB parameters of milling like beam current, dwell time and scanning model, the fabricated nano-gratings were uniform in width and the side wall had good verticality. The currently fabricated nano-gratings using focused ion beam can be adjusted to serve as sub-wavelength optical resonant sensor which can be extended to nano-grating accelerometer with resolution of 10-9g.

Experimental Study of Precipitation Processes in Oxygen Implanted Silicon

1993 ◽  
Vol 316 ◽  
Author(s):  
R. Weber ◽  
R. Yankov ◽  
R. Müller ◽  
W. Skorupa ◽  
S. Reiss ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Ostwald Ripening ◽  
Nucleation And Growth ◽  
Silicon Substrates ◽  
Clear Trend ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Buried Layer ◽  
Scanning Electron

ABSTRACTSingle crystal (100) silicon substrates were implanted at 300 keV with substoichiometric oxygen doses ranging from 1 × 1016 to 1 × 1017 cm-2. Samples were annealed for 2 hours over the temperature range from 1100°C to 1250°C and were subsequently analysed by both cross sectional transmission electron microscopy (XTEM) and scanning electron microscopy (SEM). The nucleation and growth of oxide precipitates within the implanted layer was followed during annealing. The emphasis was placed upon studying the process of Ostwald ripening which is known to play an important role in the formation of the incipient buried layer. Besides, a clear trend of the SiO2 precipitates to arrange in well defined regions was revealed and this was attributed, as distinct from the earlier claims, to an inherent process of self organisation.

The Regularities of Copper-Aluminum System Polymetallic Samples Manufacturing by the Additive Electron-Beam Technology

2020 ◽  
Vol 992 ◽  
pp. 517-522
Author(s):  
K.N. Kalashnikov ◽  
Kseniya S. Osipovich ◽  
T.A. Kalashnikova
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Aluminum Alloy ◽  
Electron Beam ◽  
Defect Formation ◽  
Boundary Zone ◽  
Copper Aluminum ◽  
Printing Parameters ◽  
Amg5 Aluminum Alloy ◽  
Scanning Electron

The structure and composition of polymetallic materials samples obtained by electron-beam manufacturing from AMg5 aluminum alloy and M1 grade copper were investigated by optical and scanning electron microscopy. Mechanisms of defect formation in the structure of samples at different 3D printing parameters are determined. The features of gradient structures formation in the boundary zone at successive deposition of aluminum alloy and copper layers are investigated.

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