Metalorganic Chemical Vapor Deposition of Non-polar III-Nitride Films over a-plane SiC Substrates

2004 ◽  
Vol 831 ◽  
Author(s):  
Jiawei Li ◽  
Zheng Gong ◽  
Changqing Chen ◽  
Vinod Adivarahan ◽  
Mikhail Gaevski ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
High Performance ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Building Blocks ◽  
Optical Quality ◽  
Structural Defects ◽  
Structural Quality ◽  
Metalorganic Chemical

ABSTRACTWe report progress in growing non-polar a-plane III-nitride films and heterostructures over a-plane 4H-SiC. a-plane SiC is more closely lattice-matched to a-plane GaN than is r-plane sapphire. Consequently, better structural quality a-plane nitride films may result over a-plane SiC substrates. By migration enhanced metalorganic chemical vapor deposition (MEMOCVD), an atomically smooth (1120)AlN layer with RMS roughness of 0.3nm was obtained. From the results of XRD, the structural defects in the AlN layer on SiC substrates were strongly reduced compared to those grown on r-plane sapphire. Also by applying our selective area lateral epitaxy (SALE) growth procedure, we achieved high structural and optical quality a-plane GaN films on 4H-SiC with RMS roughness only 0.4nm. Therefore, non-polar III-nitride films and heterostructures on SiC substrates are promising building blocks for realizing high performance polarization-free devices.

Optical Quality Dependence on Growth Rate for Metalorganic Chemical Vapor Deposition Grown GaInNAs/GaAs

2000 ◽  
Vol 39 (Part 2, No. 12A) ◽  
pp. L1219-L1220 ◽  
Author(s):  
Masao Kawaguchi ◽  
Tomoyuki Miyamoto ◽  
Eric Gouardes ◽  
Dietmar Schlenker ◽  
Takashi Kondo ◽  
...  
Keyword(s):  
Growth Rate ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Optical Quality ◽  
Metalorganic Chemical

Development of Homoepitaxially Grown GaN Thin Film Layers on Freestanding Bulk m-plane Substrates by Metalorganic Chemical Vapor Deposition (MOCVD)

2007 ◽  
Vol 1040 ◽  
Author(s):  
Vibhu Jindal ◽  
James Grandusky ◽  
Neeraj Tripathi ◽  
Mihir Tungare ◽  
Fatemeh Shahedipour-Sandvik ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Growth Rates ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Growth Conditions ◽  
Structural Defects ◽  
Lateral Growth ◽  
High Quality ◽  
Metalorganic Chemical

AbstractHigh quality homoepitaxial growth of m-plane GaN films on freestanding m-plane HVPE GaN substrates has been performed using metalorganic chemical vapor deposition. For this a large growth space was studied. Large areas of no-nucleation along with presence of high density of defects were observed when layers were grown under growth conditions for c-plane GaN. It is believed that these structural defects were in large part due to the low lateral growth rates as well as unequal lateral growth rates in a- and c- crystallographic directions. To achieve high quality, fully coalesced epitaxial layers, growth conditions were optimized with respect to growth temperature, V/III ratios and reactor pressure. Higher growth temperatures led to smoother surfaces due to increased surface diffusion of adatoms. Overall, growth at higher temperature and lower V/III ratio decreased the surface roughness and resulted in better optical properties as observed by photoluminescence. Although optimization resulted in highly smooth layers, some macroscopic defects were still observed on the epi-surface as a result of contamination and subsurface damage remaining on bulk substrates possibly due to polishing. Addition of a step involving annealing of the bulk substrate under H2: N2 environment, prior to growth, drastically reduced such macroscopic defects.

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