High performance AlAs/GaXIn1-xAs resonant tunneling diodes by metalorganic chemical vapor deposition

1995 ◽  
Vol 24 (10) ◽  
pp. 1387-1390 ◽  
Author(s):  
J. C. Yen ◽  
B. P. Keller ◽  
S. P. Denbaars ◽  
U. K. Mishra
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Resonant Tunneling ◽  
High Performance ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Resonant Tunneling Diodes ◽  
Tunneling Diodes ◽  
Metalorganic Chemical

Resonant tunneling in GaAs/AlAs heterostructures grown by metalorganic chemical vapor deposition

1985 ◽  
Vol 46 (3) ◽  
pp. 285-287 ◽  
Author(s):  
A. R. Bonnefoi ◽  
R. T. Collins ◽  
T. C. McGill ◽  
R. D. Burnham ◽  
F. A. Ponce
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Resonant Tunneling ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Metalorganic Chemical

High performance HgCdTe photoconductive devices grown by metalorganic chemical vapor deposition

1986 ◽  
Vol 48 (6) ◽  
pp. 417-418 ◽  
Author(s):  
L. T. Specht ◽  
W. E. Hoke ◽  
S. Oguz ◽  
P. J. Lemonias ◽  
V. G. Kreismanis ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
High Performance ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Metalorganic Chemical

Metalorganic Chemical Vapor Deposition of Non-polar III-Nitride Films over a-plane SiC Substrates

2004 ◽  
Vol 831 ◽  
Author(s):  
Jiawei Li ◽  
Zheng Gong ◽  
Changqing Chen ◽  
Vinod Adivarahan ◽  
Mikhail Gaevski ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
High Performance ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Building Blocks ◽  
Optical Quality ◽  
Structural Defects ◽  
Structural Quality ◽  
Metalorganic Chemical

ABSTRACTWe report progress in growing non-polar a-plane III-nitride films and heterostructures over a-plane 4H-SiC. a-plane SiC is more closely lattice-matched to a-plane GaN than is r-plane sapphire. Consequently, better structural quality a-plane nitride films may result over a-plane SiC substrates. By migration enhanced metalorganic chemical vapor deposition (MEMOCVD), an atomically smooth (1120)AlN layer with RMS roughness of 0.3nm was obtained. From the results of XRD, the structural defects in the AlN layer on SiC substrates were strongly reduced compared to those grown on r-plane sapphire. Also by applying our selective area lateral epitaxy (SALE) growth procedure, we achieved high structural and optical quality a-plane GaN films on 4H-SiC with RMS roughness only 0.4nm. Therefore, non-polar III-nitride films and heterostructures on SiC substrates are promising building blocks for realizing high performance polarization-free devices.

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