High optical quality AlInGaN by metalorganic chemical vapor deposition

1999 ◽  
Vol 75 (21) ◽  
pp. 3315-3317 ◽  
Author(s):  
M. E. Aumer ◽  
S. F. LeBoeuf ◽  
F. G. McIntosh ◽  
S. M. Bedair
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Optical Quality ◽  
High Optical Quality ◽  
Metalorganic Chemical

Optical Quality Dependence on Growth Rate for Metalorganic Chemical Vapor Deposition Grown GaInNAs/GaAs

2000 ◽  
Vol 39 (Part 2, No. 12A) ◽  
pp. L1219-L1220 ◽  
Author(s):  
Masao Kawaguchi ◽  
Tomoyuki Miyamoto ◽  
Eric Gouardes ◽  
Dietmar Schlenker ◽  
Takashi Kondo ◽  
...  
Keyword(s):  
Growth Rate ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Optical Quality ◽  
Metalorganic Chemical

Metalorganic Chemical Vapor Deposition of Non-polar III-Nitride Films over a-plane SiC Substrates

2004 ◽  
Vol 831 ◽  
Author(s):  
Jiawei Li ◽  
Zheng Gong ◽  
Changqing Chen ◽  
Vinod Adivarahan ◽  
Mikhail Gaevski ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
High Performance ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Building Blocks ◽  
Optical Quality ◽  
Structural Defects ◽  
Structural Quality ◽  
Metalorganic Chemical

ABSTRACTWe report progress in growing non-polar a-plane III-nitride films and heterostructures over a-plane 4H-SiC. a-plane SiC is more closely lattice-matched to a-plane GaN than is r-plane sapphire. Consequently, better structural quality a-plane nitride films may result over a-plane SiC substrates. By migration enhanced metalorganic chemical vapor deposition (MEMOCVD), an atomically smooth (1120)AlN layer with RMS roughness of 0.3nm was obtained. From the results of XRD, the structural defects in the AlN layer on SiC substrates were strongly reduced compared to those grown on r-plane sapphire. Also by applying our selective area lateral epitaxy (SALE) growth procedure, we achieved high structural and optical quality a-plane GaN films on 4H-SiC with RMS roughness only 0.4nm. Therefore, non-polar III-nitride films and heterostructures on SiC substrates are promising building blocks for realizing high performance polarization-free devices.

scholarly journals Metalorganic chemical vapor deposition of InN quantum dots and nanostructures

2021 ◽  
Vol 10 (1) ◽  
Author(s):  
Caroline E. Reilly ◽  
Stacia Keller ◽  
Shuji Nakamura ◽  
Steven P. DenBaars
Keyword(s):  
Quantum Dots ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Near Infrared ◽  
Optoelectronic Devices ◽  
Chemical Vapor ◽  
Electromagnetic Spectrum ◽  
Material System ◽  
Metalorganic Chemical

AbstractUsing one material system from the near infrared into the ultraviolet is an attractive goal, and may be achieved with (In,Al,Ga)N. This III-N material system, famous for enabling blue and white solid-state lighting, has been pushing towards longer wavelengths in more recent years. With a bandgap of about 0.7 eV, InN can emit light in the near infrared, potentially overlapping with the part of the electromagnetic spectrum currently dominated by III-As and III-P technology. As has been the case in these other III–V material systems, nanostructures such as quantum dots and quantum dashes provide additional benefits towards optoelectronic devices. In the case of InN, these nanostructures have been in the development stage for some time, with more recent developments allowing for InN quantum dots and dashes to be incorporated into larger device structures. This review will detail the current state of metalorganic chemical vapor deposition of InN nanostructures, focusing on how precursor choices, crystallographic orientation, and other growth parameters affect the deposition. The optical properties of InN nanostructures will also be assessed, with an eye towards the fabrication of optoelectronic devices such as light-emitting diodes, laser diodes, and photodetectors.

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