High optical quality polycrystalline indium phosphide grown on metal substrates by metalorganic chemical vapor deposition

2012 ◽  
Vol 111 (12) ◽  
pp. 123112 ◽  
Author(s):  
Maxwell Zheng ◽  
Zhibin Yu ◽  
Tae Joon Seok ◽  
Yu-Ze Chen ◽  
Rehan Kapadia ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Indium Phosphide ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Optical Quality ◽  
High Optical Quality ◽  
Metal Substrates ◽  
Metalorganic Chemical

Optical Quality Dependence on Growth Rate for Metalorganic Chemical Vapor Deposition Grown GaInNAs/GaAs

2000 ◽  
Vol 39 (Part 2, No. 12A) ◽  
pp. L1219-L1220 ◽  
Author(s):  
Masao Kawaguchi ◽  
Tomoyuki Miyamoto ◽  
Eric Gouardes ◽  
Dietmar Schlenker ◽  
Takashi Kondo ◽  
...  
Keyword(s):  
Growth Rate ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Optical Quality ◽  
Metalorganic Chemical

Film microstructure-deposition condition relationships in the growth of epitaxial NiO films by metalorganic chemical vapor deposition on oxide and metal substrates

1999 ◽  
Vol 14 (3) ◽  
pp. 1132-1136 ◽  
Author(s):  
Anchuan Wang ◽  
John A. Belot ◽  
Tobin J. Marks
Keyword(s):  
Chemical Vapor Deposition ◽  
Flow Rate ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Carbon Contamination ◽  
Metal Substrates ◽  
Nio Films ◽  
Metalorganic Chemical

High-quality epitaxial or highly textured NiO thin films can be grown at temperatures of 400–750°C by low-pressure metalorganic chemical vapor deposition (MOCVD) on MgO, SrTiO3, C-cut sapphire, as well as on single crystal and highly textured Ni (200) metal substrates using Ni(dpm)2 (dpm – dipivaloylmethanate) as the volatile precursor and O2 or H2O as the oxidizer/protonolyzer. X-ray diffraction (XRD), scanning electron microscopy/energy dispersive detection (SEM/EDX), and atomic force microscopy (AFM) confirm that the O2-derived NiO films are smooth and that the quality of the epitaxy can be improved by decreasing the growth temperature and/or the precursor flow rate. However, low growth temperatures (400–500 °C) lead to rougher surfaces and carbon contamination. The H2O-derived NiO films, which can be obtained only at relatively high temperatures (650–750 °C), exhibit slightly broader ω scan full width half-maximum (FWHM) values and rougher surfaces but no carbon contamination. Using H2O as the oxidizer/protonolyzer, smooth and highly textured NiO (111) films can be grown on easily oxidized single crystal and highly textured Ni (200) metal substrates, which is impossible when O2 is the oxidizer. The textural quality of these films depends on both the quality of the metal substrates and the gaseous precursor flow rate.

Metalorganic Chemical Vapor Deposition of Non-polar III-Nitride Films over a-plane SiC Substrates

2004 ◽  
Vol 831 ◽  
Author(s):  
Jiawei Li ◽  
Zheng Gong ◽  
Changqing Chen ◽  
Vinod Adivarahan ◽  
Mikhail Gaevski ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
High Performance ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Building Blocks ◽  
Optical Quality ◽  
Structural Defects ◽  
Structural Quality ◽  
Metalorganic Chemical

ABSTRACTWe report progress in growing non-polar a-plane III-nitride films and heterostructures over a-plane 4H-SiC. a-plane SiC is more closely lattice-matched to a-plane GaN than is r-plane sapphire. Consequently, better structural quality a-plane nitride films may result over a-plane SiC substrates. By migration enhanced metalorganic chemical vapor deposition (MEMOCVD), an atomically smooth (1120)AlN layer with RMS roughness of 0.3nm was obtained. From the results of XRD, the structural defects in the AlN layer on SiC substrates were strongly reduced compared to those grown on r-plane sapphire. Also by applying our selective area lateral epitaxy (SALE) growth procedure, we achieved high structural and optical quality a-plane GaN films on 4H-SiC with RMS roughness only 0.4nm. Therefore, non-polar III-nitride films and heterostructures on SiC substrates are promising building blocks for realizing high performance polarization-free devices.

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