A PAIR-DIFFUSION MODEL FOR ARSENIC IN SILICON CONSIDERING ARSENIC DEACTTVATION-INDUCEDINTERSTITIAL-SDLICON EMISSION

1997 ◽  
Vol 469 ◽  
Author(s):  
Masayuki Hiroi ◽  
Takeo Ikezawa ◽  
Masami Hane ◽  
Hiroshi Matsumoto
Keyword(s):  
Point Defect ◽  
Diffusion Model ◽  
Mass Spectroscopy ◽  
Beam Energy ◽  
Binding Energies ◽  
Primary Beam ◽  
Secondary Ion Mass Spectroscopy ◽  
Deactivation Process ◽  
Secondary Ion

ABSTRACTAn arsenic diffusion model was proposed with the emphasis on a new deactivation process which accounts for excess interstitial silicon generation. Appropriate parameter set for the binding energies of arsenic-point defect pairs were obtained for reproducing various arsenic activation levels and interaction with boron in the case of co-diffusion. Such parameters were extracted from the data of carefully performed secondary ion mass spectroscopy with lowering the primary beam energy.

Effect of Point Defect Injection on B diffusion in C containing Si and SiGe

2004 ◽  
Vol 809 ◽  
Author(s):  
Mudith S. A. Karunaratne ◽  
Janet M. Bonar ◽  
Jing Zhang ◽  
Arthur F. W. Willoughby
Keyword(s):  
Computer Simulation ◽  
Point Defect ◽  
Mass Spectroscopy ◽  
Diffusion Coefficients ◽  
Secondary Ion Mass Spectroscopy ◽  
Annealing Conditions ◽  
Defect Injection ◽  
Before And After ◽  
Secondary Ion

ABSTRACTIn this paper, we compare B diffusion in epitaxial Si, Si with 0.1%C, SiGe with 11% Ge and SiGe:C with 11%Ge and 0.1%C at 1000°C under interstitial, vacancy and non-injection annealing conditions. Diffusion coefficients of B in each material were extracted by computer simulation, using secondary ion mass spectroscopy (SIMS) profiles obtained from samples before and after annealing.Interstitial injection enhances B diffusion considerably in all materials compared to inert annealing. In samples which experienced vacancy injection, B diffusion was suppressed. The results are consistent with the view that B diffusion in these materials occurs primarily via interstitialcy type defects.

Metal—Polyimide Interfaces Characterized by Secondary Ion Mass Spectroscopy

1990 ◽  
pp. 297-311 ◽  
Author(s):  
B. K. Furman ◽  
S. Purushothaman ◽  
E. Castellani ◽  
S. Renick ◽  
D. Neugroshl
Keyword(s):  
Mass Spectroscopy ◽  
Secondary Ion Mass Spectroscopy ◽  
Secondary Ion

Cr diffusion inα-Al2O3: Secondary ion mass spectroscopy and first-principles study

2010 ◽  
Vol 82 (17) ◽  
Author(s):  
Nobuaki Takahashi ◽  
Teruyasu Mizoguchi ◽  
Tsubasa Nakagawa ◽  
Tetsuya Tohei ◽  
Isao Sakaguchi ◽  
...  
Keyword(s):  
Mass Spectroscopy ◽  
First Principles ◽  
Secondary Ion Mass Spectroscopy ◽  
First Principles Study ◽  
Secondary Ion
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