Relaxation of Strained SiGe on Insulator by Direct Wafer Bonding

2004 ◽  
Vol 809 ◽  
Author(s):  
Jer-shen Maa ◽  
Jong-Jan Lee ◽  
Douglas Tweet ◽  
Sheng Teng Hsu
Keyword(s):  
Silicon Dioxide ◽  
Wafer Bonding ◽  
Annealing Temperature ◽  
Relaxation Mechanism ◽  
Film Structure ◽  
Oxide Surface ◽  
Direct Wafer Bonding ◽  
High Degree ◽  
Possible Cause ◽  
Strained Sige

ABSTRACTStrained SiGe was bonded to silicon dioxide by direct wafer bonding and Smart-cut technique. Strained SiGe with a graded 20%-30% Ge concentration was deposited by RTCVD on (100) Si to a thickness between 300nm to 350nm. H2+ for wafer splitting was implanted at an energy varied from 40 keV to 150 keV and a dose between 2.5E16 and 4.5E16 ions/cm2. SiGe relaxation was found to depend on wafer split temperature, and on post-split annealing temperature. SiGe relaxation of greater than 80% was observed after wafer splitting and annealing. Was it from gliding of a SiGe film weakly bonded to an oxide surface? In order to determine the relaxation mechanism, samples with different film structure were prepared. The films were then annealed at various temperatures. Some film showed a high degree of relaxation, and some showed minimal relaxation, depending mostly on hydrogen implant depth. The results indicated that the generation of dislocation is the possible cause of SiGe relaxation.

Fabrication of Strained Silicon on Insulator (SSOI) by Direct Wafer Bonding Using Thin Relaxed SiGe Film as Virtual Substrate

2004 ◽  
Vol 809 ◽  
Author(s):  
J.J. Lee ◽  
J.S. Maa ◽  
D. J. Tweet ◽  
S.T. Hsu
Keyword(s):  
Wafer Bonding ◽  
Lattice Relaxation ◽  
Channel Length ◽  
Silicon On Insulator ◽  
Si Substrate ◽  
Strained Si ◽  
Drive Current ◽  
Defect Zone ◽  
Direct Wafer Bonding ◽  
Strained Sige

ABSTRACTNMOS devices have been successfully fabricated on SSOI wafers. The SSOI wafer fabrication is by direct wafer bonding and wafer transfer by splitting of the strained Si on thin SiGe virtual substrate to an oxidized wafer. The thin SiGe virtual substrate is fabricated by strained SiGe deposition, H2+ implantation, and SiGe lattice relaxation anneal. This relaxation process creates a confined defect zone at the SiGe to Si substrate interface that ensures low defect strained Si growth. 10 μm by 10 μm NMOS SSOI devices show an improvement of 100% in drive current and 115% in transconductance. A near ideal subthreshold swing was observed on NMOS devices with channel length as short as 0.1 μm.

Low Temperature Wafer Bonding in Medium Vacuum

2004 ◽  
Author(s):  
W. B. Yu ◽  
J. Wei ◽  
C. M. Tan ◽  
S. S. Deng
Keyword(s):  
Low Temperature ◽  
Plasma Treatment ◽  
Wafer Bonding ◽  
Annealing Temperature ◽  
Vacuum Condition ◽  
Ex Situ ◽  
Bonding Quality ◽  
Direct Wafer Bonding ◽  
Medium Vacuum

Direct wafer bonding was performed under medium vacuum condition. The effect of the sequence of wafers contact and vacuum application, plasma treatment, and annealing temperature on the bonding quality was investigated. From the comparison of the bonding efficiency, contacting two wafers in air rather than in vacuum produces much less bubbles. Besides, it was also found that ex-situ plasma treatment degrades the bonding quality. It is believed that the degradation is caused by contamination and damage induced by the plasma treatment before vacuum wafer bonding. For vacuum bonding without plasma treatment, good bonding can be achieved at temperature as low as 300 °C.

High Precision Low Temperature Direct Wafer Bonding Technology for Wafer-Level 3D ICs Manufacturing

2016 ◽  
Vol 75 (9) ◽  
pp. 345-353 ◽  
Author(s):  
F. Kurz ◽  
T. Plach ◽  
J. Suss ◽  
T. Wagenleitner ◽  
D. Zinner ◽  
...  
Keyword(s):  
Low Temperature ◽  
High Precision ◽  
Wafer Bonding ◽  
Wafer Level ◽  
3D Ics ◽  
Direct Wafer Bonding ◽  
Bonding Technology

Low temperature GaAs/Si direct wafer bonding

2000 ◽  
Vol 36 (7) ◽  
pp. 677 ◽  
Author(s):  
M. Alexe ◽  
V. Dragoi ◽  
M. Reiche ◽  
U. Gösele
Keyword(s):  
Low Temperature ◽  
Wafer Bonding ◽  
Direct Wafer Bonding ◽  
Low Temperature Gaas

Point defects generated by direct-wafer bonding of silicon

2002 ◽  
Vol 31 (2) ◽  
pp. 113-118 ◽  
Author(s):  
L. Dózsa ◽  
B. Szentpáli ◽  
D. Pasquariello ◽  
K. Hjort
Keyword(s):  
Point Defects ◽  
Wafer Bonding ◽  
Direct Wafer Bonding

New Generation of Structures Obtained by Direct Wafer Bonding of Processed Wafers

2019 ◽  
Vol 3 (6) ◽  
pp. 79-90 ◽  
Author(s):  
Bernard Aspar ◽  
Chrystelle Lagahe-Blanchard ◽  
Nicolas Sousbie ◽  
Jacques Margail ◽  
H. Moriceau
Keyword(s):  
Wafer Bonding ◽  
Direct Wafer Bonding ◽  
New Generation

Pb(Zr,Ti)O3-silicon heterostructures fabricated by direct wafer bonding

1998 ◽  
Vol 19 (1-4) ◽  
pp. 95-109 ◽  
Author(s):  
Marin Alexe ◽  
James F. Scott ◽  
Alain Pignolet ◽  
Dietrich Hesse ◽  
Ulrich Gösele
Keyword(s):  
Wafer Bonding ◽  
Direct Wafer Bonding ◽  
Silicon Heterostructures

Investigation of the influence of the mode of heat treatment of the initial powder on the efficiency of sintering zirconium ceramics by dilatometry

2021 ◽  
Vol 103 (3) ◽  
pp. 17-24
Author(s):  
S. Shevelev ◽  
◽  
E. Sheveleva ◽  
O. Stary ◽  
Keyword(s):  
Thermal Annealing ◽  
Zirconium Dioxide ◽  
Annealing Temperature ◽  
Average Particle Size ◽  
Average Particle ◽  
Sintered Ceramic ◽  
Tetragonal Modification ◽  
Thermal Sintering ◽  
Powder Compacts ◽  
High Degree

Using methods of synchronous thermal and X-ray structural analyzes applied to zirconium dioxide powders partially stabilized with yttrium obtained by chemical coprecipitation the processes of dehydration of these powders during annealing in air have been investigated. Using the dilatometry method, the regularities of compaction of powder compacts have been investigated with thermal sintering. It was found that the resulting powders mainly consist of the tetragonal modification zirconium dioxide and are nano-sized. The average particle size was 25 nm. The resulting powders are characterized by a high degree of agglomeration. It is shown that an increase in the thermal annealing temperature from 500 to 700ºС leads to partial baking of individual particles inside the agglomerate, and causes the formation of hard agglomerates, the presence of which complicates the processes of compaction and subsequent sintering. The presence of such agglomerates prevents the production of ceramics with high mechanical characteristics: density and porosity. Thermal annealing temperature increase leads to a decrease in the density of the sintered ceramic and a decrease in its hardness.

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