Oxygen Plasma and Humidity Dependent Surface Analysis of Silicon, Silicon Dioxide and Glass for Direct Wafer Bonding

2013 ◽  
Vol 2 (12) ◽  
pp. P515-P523 ◽  
Author(s):  
A. U. Alam ◽  
M. M. R. Howlader ◽  
M. J. Deen
Keyword(s):  
Silicon Dioxide ◽  
Surface Analysis ◽  
Wafer Bonding ◽  
Oxygen Plasma ◽  
Direct Wafer Bonding ◽  
Silicon Silicon

Relaxation of Strained SiGe on Insulator by Direct Wafer Bonding

2004 ◽  
Vol 809 ◽  
Author(s):  
Jer-shen Maa ◽  
Jong-Jan Lee ◽  
Douglas Tweet ◽  
Sheng Teng Hsu
Keyword(s):  
Silicon Dioxide ◽  
Wafer Bonding ◽  
Annealing Temperature ◽  
Relaxation Mechanism ◽  
Film Structure ◽  
Oxide Surface ◽  
Direct Wafer Bonding ◽  
High Degree ◽  
Possible Cause ◽  
Strained Sige

ABSTRACTStrained SiGe was bonded to silicon dioxide by direct wafer bonding and Smart-cut technique. Strained SiGe with a graded 20%-30% Ge concentration was deposited by RTCVD on (100) Si to a thickness between 300nm to 350nm. H2+ for wafer splitting was implanted at an energy varied from 40 keV to 150 keV and a dose between 2.5E16 and 4.5E16 ions/cm2. SiGe relaxation was found to depend on wafer split temperature, and on post-split annealing temperature. SiGe relaxation of greater than 80% was observed after wafer splitting and annealing. Was it from gliding of a SiGe film weakly bonded to an oxide surface? In order to determine the relaxation mechanism, samples with different film structure were prepared. The films were then annealed at various temperatures. Some film showed a high degree of relaxation, and some showed minimal relaxation, depending mostly on hydrogen implant depth. The results indicated that the generation of dislocation is the possible cause of SiGe relaxation.

High Precision Low Temperature Direct Wafer Bonding Technology for Wafer-Level 3D ICs Manufacturing

2016 ◽  
Vol 75 (9) ◽  
pp. 345-353 ◽  
Author(s):  
F. Kurz ◽  
T. Plach ◽  
J. Suss ◽  
T. Wagenleitner ◽  
D. Zinner ◽  
...  
Keyword(s):  
Low Temperature ◽  
High Precision ◽  
Wafer Bonding ◽  
Wafer Level ◽  
3D Ics ◽  
Direct Wafer Bonding ◽  
Bonding Technology

Low temperature GaAs/Si direct wafer bonding

2000 ◽  
Vol 36 (7) ◽  
pp. 677 ◽  
Author(s):  
M. Alexe ◽  
V. Dragoi ◽  
M. Reiche ◽  
U. Gösele
Keyword(s):  
Low Temperature ◽  
Wafer Bonding ◽  
Direct Wafer Bonding ◽  
Low Temperature Gaas

Carrier tunneling in nanocrystalline silicon–silicon dioxide superlattices: A weak coupling model

2004 ◽  
Vol 69 (23) ◽  
Author(s):  
B. V. Kamenev ◽  
G. F. Grom ◽  
D. J. Lockwood ◽  
J. P. McCafrey ◽  
B. Laikhtman ◽  
...  
Keyword(s):  
Silicon Dioxide ◽  
Weak Coupling ◽  
Coupling Model ◽  
Nanocrystalline Silicon ◽  
Carrier Tunneling ◽  
Silicon Silicon

Point defects generated by direct-wafer bonding of silicon

2002 ◽  
Vol 31 (2) ◽  
pp. 113-118 ◽  
Author(s):  
L. Dózsa ◽  
B. Szentpáli ◽  
D. Pasquariello ◽  
K. Hjort
Keyword(s):  
Point Defects ◽  
Wafer Bonding ◽  
Direct Wafer Bonding

New Generation of Structures Obtained by Direct Wafer Bonding of Processed Wafers

2019 ◽  
Vol 3 (6) ◽  
pp. 79-90 ◽  
Author(s):  
Bernard Aspar ◽  
Chrystelle Lagahe-Blanchard ◽  
Nicolas Sousbie ◽  
Jacques Margail ◽  
H. Moriceau
Keyword(s):  
Wafer Bonding ◽  
Direct Wafer Bonding ◽  
New Generation

Pb(Zr,Ti)O3-silicon heterostructures fabricated by direct wafer bonding

1998 ◽  
Vol 19 (1-4) ◽  
pp. 95-109 ◽  
Author(s):  
Marin Alexe ◽  
James F. Scott ◽  
Alain Pignolet ◽  
Dietrich Hesse ◽  
Ulrich Gösele
Keyword(s):  
Wafer Bonding ◽  
Direct Wafer Bonding ◽  
Silicon Heterostructures

(Invited) Water Transport Along Si/Si Direct Wafer Bonding Interfaces

2018 ◽  
Vol 86 (5) ◽  
pp. 39-47
Author(s):  
François Rieutord ◽  
Samuel Tardif ◽  
Ivan Nikitskiy ◽  
Frank Fournel ◽  
Marwan Tedjini ◽  
...  
Keyword(s):  
Water Transport ◽  
Wafer Bonding ◽  
Direct Wafer Bonding
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