scholarly journals LOW TEMPERATURE GROWTH OF THIN Ge FILM ON Si SUBSTRATES BY MOLECULAR BEAM EPITAXY

1988 ◽  
Vol 37 (10) ◽  
pp. 1607
Author(s):  
ZHOU GUO-LIANG ◽  
CHEN KE-MING ◽  
TIAN LIANG-GUANG
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Molecular Beam ◽  
Temperature Growth ◽  
Low Temperature Growth ◽  
Si Substrates

Compound-source Molecular Beam Epitaxy of GaN on Si at Low Temperature Using GaN Powder and Ammonia as Sources

2006 ◽  
Vol 955 ◽  
Author(s):  
Tohru Honda ◽  
Masaru Sawada ◽  
Hiromi Yamamoto ◽  
Masashi Sawadaishi
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Photoelectron Spectroscopy ◽  
Molecular Beam ◽  
High Energy ◽  
Back Reaction ◽  
Xps Spectra ◽  
Temperature Growth ◽  
Low Temperature Growth ◽  
Si Substrates

ABSTRACTLow-temperature growth of GaN is very attracting for the application to light emitting devices grown on Si substrates because it prevents the melt-back reaction between Ga and Si substrates. The low-temperature growth of GaN by compound-source molecular beam epitaxy (CS-MBE) has been reported. In the previous report, GaN powders were used as a source and no additional nitrogen source was introduced during the growth. At present, its growth mechanism is unclear. In this paper, CS-MBE of GaN layers using GaN and ammonia as sources is discussed. Especially, the reduction of excess Ga in GaN layers by introducing ammonia supply is discussed based on their refraction high-energy electron diffraction (RHEED) patterns and x-ray photoelectron spectroscopy (XPS) spectra.

Low‐temperature growth of high resistivity GaP by gas‐source molecular beam epitaxy

1992 ◽  
Vol 61 (14) ◽  
pp. 1646-1648 ◽  
Author(s):  
J. Ramdani ◽  
Y. He ◽  
M. Leonard ◽  
N. El‐Masry ◽  
S. M. Bedair
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Molecular Beam ◽  
High Resistivity ◽  
Temperature Growth ◽  
Low Temperature Growth ◽  
Gas Source

Low-temperature growth properties of Si1−xGex by disilane and solid-Ge molecular beam epitaxy

1998 ◽  
Vol 193 (4) ◽  
pp. 535-540 ◽  
Author(s):  
J.P. Liu ◽  
M.Y. Kong ◽  
J.P. Li ◽  
X.F. Liu ◽  
D.D. Huang ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Molecular Beam ◽  
Temperature Growth ◽  
Low Temperature Growth ◽  
Growth Properties
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