A Mechanical Study of W and W2N Single Layers, and W2N/W Multilayers

2003 ◽  
Vol 778 ◽  
Author(s):  
L. Maillé ◽  
C. Sant ◽  
P. Aubert ◽  
P. Garnier
Keyword(s):  
Mechanical Properties ◽  
Partial Pressure ◽  
N Deposition ◽  
Nitrogen Partial Pressure ◽  
Layer Spacing ◽  
Partial Pressures ◽  
Mechanical Study

AbstractThe microstructure of W, W2N single layers and W2N/W multilayers are related to their mechanical properties. We study the hardness of multilayers as function of the period thickness. Two partial pressures of nitride (PN2 = 10 % and 50 %) for W2N deposition are investigated. For the single layers, the hardness value increases with the nitrogen partial pressure. The hardness of W2N/W multilayers using PN2 = 50% for W2N deposition increases when the layer spacing decreased. A hardness value of 19.5 GPa is reached for a multilayer with PN2 = 50% and, close to 20 GPa with PN2 = 10% for all the period studied.

scholarly journals Structural, optical and electrical properties of reactively sputtered CrxNy films: Nitrogen influence on the phase formation

2017 ◽  
Vol 11 (1) ◽  
pp. 45-51 ◽  
Author(s):  
Mirjana Novakovic ◽  
Maja Popovic ◽  
Zlatko Rakocevic ◽  
Natasa Bibic
Keyword(s):  
Partial Pressure ◽  
Phase Formation ◽  
Rutherford Backscattering Spectrometry ◽  
Deposition Process ◽  
Columnar Structure ◽  
Nitrogen Partial Pressure ◽  
Tem Analysis ◽  
Dense Microstructure ◽  
Transmission Electron ◽  
Partial Pressures

The properties of various CrxNy films grown by direct current (DC) reactive sputtering process with different values of nitrogen partial pressures (0, 2?10-4, 3.5?10-4 and 5?10-4 mbar) were studied. The structural analysis of the samples was performed by using X-ray diffraction and transmission electron microscopy (TEM), while an elemental analysis was realized by means of Rutherford backscattering spectrometry. By varying nitrogen partial pressure the pure Cr layer, mixture of Cr, Cr2N and CrN phases, or single-phase CrN was produced. TEM analysis showed that at pN2 = 2?10-4 mbar the layer has dense microstructure. On the other hand, the layer deposited at the highest nitrogen partial pressure exhibits pronounced columnar structure. The optical properties of CrxNy films were evaluated from spectroscopic ellipsometry data by the Drude or combined Drude and Tauc-Lorentz model. It was found that both refractive index and extinction coefficient are strongly dependent on the dominant phase formation (Cr, Cr2N, CrN) during the deposition process. Finally, the electrical studies indicated the metallic character of Cr2N phase and semiconducting behaviour of CrN.

scholarly journals Ion-beam irradiation effects on reactively sputtered CrN layers

2011 ◽  
Vol 5 (1) ◽  
pp. 25-29 ◽  
Author(s):  
Mirjana Novakovic ◽  
Maja Popovic ◽  
Natasa Bibic
Keyword(s):  
Partial Pressure ◽  
Structural Changes ◽  
Ion Beam ◽  
Xrd Analysis ◽  
Nitrogen Partial Pressure ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Partial Pressures ◽  
Mean Grain Size ◽  
Argon Ions

This paper presents a study of micro-structural changes induced in CrN layers by irradiation with 120 keV argon ions. The layers were deposited on (100) Si wafers, at different nitrogen partial pressures (2?10-4, 3.5?10-4 and 5?10-4 mbar), to a total thickness of 260-280 nm. During deposition the substrates were held at 150?C. After deposition the samples were irradiated with argon ions to the fluencies of 1?1015 and 1?1016 ions/cm2, under the vacuum of 7?10-6 mbar. Characterization of the samples structure and morphology were performed by X-ray diffraction (XRD) analysis and cross-sectional transmission electron microscopy (XTEM), and the concentration profiles were determined by Rutheford backscattering (RBS) spectrometry. It was found that the layer composition strongly depends on the nitrogen partial pressure during deposition. A pure stoichiometric CrN phase was achieved for the highest nitrogen partial pressure (5?10-4 mbar). Argon ions irradiation induces micro-structural changes in the CrN layers such as variation of the lattice constants, micro-strain and mean grain size.

Structure and bonding studies of the C:N thin films produced by rf sputtering method

1990 ◽  
Vol 5 (11) ◽  
pp. 2490-2496 ◽  
Author(s):  
C. J. Torng ◽  
J. M. Sivertsen ◽  
J. H. Judy ◽  
C. Chang
Keyword(s):  
Thin Films ◽  
Mechanical Properties ◽  
Partial Pressure ◽  
Energy Gap ◽  
Rf Sputtering ◽  
Nitrogen Plasma ◽  
Systematic Variation ◽  
Nitrogen Partial Pressure ◽  
Graphite Target ◽  
Structure And Bonding

Thin C:N films were prepared by rf diode sputtering of a graphite target in a mixed argon/nitrogen plasma. We have observed a systematic variation of the properties of these C:N films with an increase in the nitrogen partial pressure. XPS, AES, and TEM studies show that nitrogen will stabilize the diamond sp3 bonding. From XPS studies, we found that the density of our C:N films is increased from 1.37 × 1023 atoms/cm3 to 1.63 × 1023 atoms/cm3 using a 100% nitrogen plasma. The energy gap of our nitrogen carbon also shows an increase from 1.1 eV to 1.4 eV using a 100% nitrogen plasma. The mechanical properties also are shown to be enhanced for certain applications. By using the same method, we can also show that it can produce 100% amorphous C:N films which are more diamond-like as compared with other methods.

OPTICAL AND ELECTRICAL PROPERTIES OF VANADIUM NITRIDE THIN FILMS

1999 ◽  
Vol 13 (07) ◽  
pp. 833-839 ◽  
Author(s):  
M. GHANASHYAM KRISHNA ◽  
A. K. BHATTACHARYA
Keyword(s):  
Thin Films ◽  
Partial Pressure ◽  
Total Pressure ◽  
Optical Constants ◽  
Vanadium Nitride ◽  
Nitrogen Partial Pressure ◽  
Dc Magnetron Sputtering ◽  
Partial Pressures ◽  
Similar Dependence ◽  
Quartz Substrates

Vanadium nitride thin films have been deposited on to quartz substrates by dc magnetron sputtering at two different total pressures and a series of nitrogen partial pressures. The spectral transmittance of these films, in the region 350 to 1500 nm, is strongly dependent on the nitrogen partial pressure during sputtering and relatively insensitive to total pressure. The films became more transparent as the nitrogen partial pressure was decreased at a constant total pressure. The optical constants, refractive index and extinction coefficient, exhibited a similar dependence on the nitrogen partial pressure. The sheet resistivity of the films decreased with increasing nitrogen partial pressure. The values of resistivity indicate that the films are semiconducting rather than metalic.

Changes in Structural, Morphological, and Corrosion Properties of CrN Thin Film Effected by Varying N2 Pressure in the Sputtering Process

2015 ◽  
Vol 659 ◽  
pp. 555-559 ◽  
Author(s):  
Wichuda Wongtanasarasin ◽  
Rachsak Sakdanuphab ◽  
Kajpanya Suwansukho ◽  
Aparporn Sakulkalavek
Keyword(s):  
Crystal Structure ◽  
Thin Films ◽  
Partial Pressure ◽  
Nitrogen Pressure ◽  
Lattice Parameter ◽  
Corrosion Property ◽  
Face Centered Cubic ◽  
Nitrogen Partial Pressure ◽  
Corrosion Properties ◽  
Partial Pressures

In this study, we investigate a facet of the fabrication process of chromium nitride (CrN) film intended as a protective coating for pineapple blades. CrN thin films were deposited on unpolished stainless steel substrates (AISI304) by DC reactive magnetron sputtering in Ar+N2 gases. In principle, the proportion of nitrogen partial pressure to the total pressure in the sputtering process should have considerable effects on the CrN film’s chemical composition, its crystal structure, its hardness, and its corrosion resistance. We tested this supposition out by using several different nitrogen partial pressures in the sputtering process and observed the films deposited. The coatings were deposited at five different nitrogen partial pressures of 4.0x10-4 mbar, 8.0x10-4 mbar, 1.2x10-3 mbar, 1.6x10-3 mbar, and 2.0x10-3. The deposition times were controlled to achieve 5-µm thick films in each deposition. The films were analyzed by several analytical methods, such as X-ray diffraction (XRD), scanning electron microscope, micro-hardness and potentiostat in pineapple juice. The XRD spectra of the films showed face-centered cubic structure with (200) preferred orientation, positively identifying them as Cr2N and CrN thin films. The calculated d-spacing and lattice parameter of the CrN films increased with increasing nitrogen partial pressure; the ranges were 0.283–0.287 nm and 0.491-0.497 nm, respectively. The cross-section morphology of the CrN films reveals the columnar grain growth with a high density. The crystal structure and the grain texture correspond with the hardness property. The films corrosion potential, an indicator of their corrosion property, was varied from -0.14 to -0.05 volts with varying nitrogen pressure. The most corrosion resistant and the good hardness were the film fabricated at the nitrogen partial pressure of 1.2x10-3 mbar.

The Effects of Oxygen Vacancy Concentration on the Mechanical Properties of Zirconia and Ceria-Based Electrolytes for SOFCs

2009 ◽  
Author(s):  
Toshiyuki Hashida ◽  
Yohei Takeyama ◽  
Kazuhisa Sato
Keyword(s):  
Mechanical Properties ◽  
Elastic Modulus ◽  
Fracture Surface ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Fracture Strength ◽  
Atmospheric Pressure ◽  
Small Punch ◽  
Testing Method ◽  
Partial Pressures

In this paper, we discuss the effects of different oxygen partial pressures on the deformation property and fracture characteristics of representative constituent materials for solid oxide fuel cells (SOFCs). The elastic modulus and fracture strength of 8 mol% yittria stabilized zirconia (8YSZ) and 10 mol% gadolinia doped ceria (10GDC) treated under different oxygen partial pressures were evaluated using the small-punch testing method in this study. The specimens of 8YSZ and 10GDC prepared by a sintering process were treated at 800 °C under an oxygen partial pressure in the range of 0.21 to 10−22 atm for 1 hour. The treated specimens were then fast cooled down to a room temperature, and their mechanical properties were measured under an atmospheric pressure condition by using the small-punch testing method. The experimental results revealed that both the elastic modulus and fracture strength of the 10GDC decreased drastically when the oxygen partial pressure of the treatment was less than 10−15 atm, whereas no significant variation in both the mechanical properties was observed for the 8YSZ. The elastic modulus and fracture strength of 10GDC for the treatment under 10−22 atm was reduced down to 10–20% of those treated under the atmospheric pressure. SEM observations revealed that the fracture surface of the 10GDC specimens was changed from transgranular mode to intergranular mode when the oxygen partial pressure was reduced, whereas the fracture surface of the 8YSZ specimens was transgranular regardless of the different oxygen partial pressures.

scholarly journals Influence of Nitrogen Partial Pressure and Substrate Bias on the Mechanical Properties of VN Coatings

2012 ◽  
Vol 36 ◽  
pp. 217-225 ◽  
Author(s):  
Yuexiu Qiu ◽  
Sam Zhang ◽  
Bo Li ◽  
Jyh-Wei Lee ◽  
Dongliang Zhao
Keyword(s):  
Mechanical Properties ◽  
Partial Pressure ◽  
Substrate Bias ◽  
Nitrogen Partial Pressure

Study on the Modification of TiN and CrN Binary Films

2011 ◽  
Vol 479 ◽  
pp. 90-97
Author(s):  
Tao Zhou ◽  
Pu Lin Nie ◽  
Xun Cai
Keyword(s):  
Mechanical Properties ◽  
Thermal Stability ◽  
Partial Pressure ◽  
Modern Science ◽  
Doping Element ◽  
Nano Indentation ◽  
Deposition Parameters ◽  
Partial Pressures ◽  
Substrate Temperatures ◽  
Thermal Stability Of

With the development of modern science and technology, the elements such as Al, Si, Mo, C, B will be doped into the TiN and CrN binary films to improve their properties. In this work, a series of Ti-X-N and Cr-X-N films were prepared under the various N2 partial pressures，bias voltages and substrate temperatures by reactive magnetron sputtering using the mosaic target and multi-targets systems. The composition, microstructure, mechanical properties and thermal stability of the films were investigated using EDS, XRD, XPS, AFM, nano-indentation, scratch and thermal stability test. The results indicated that the doping element content, microstructure and mechanical properties of the films can be easily regulated through the deposition parameters, such as the N2 partial pressure，bias voltages and so on. The superhard Ti-Si-N and Ti-Al-N films with the nanohardness of more than 40GPa can be achieved, especially when the lower N2 partial pressure is used.

Structural and Mechanical Properties of Ti-W-N Thin Films by Dual Unbalanced Magnetron Sputtering

2015 ◽  
Vol 1131 ◽  
pp. 246-250 ◽  
Author(s):  
Pattira Homhuan ◽  
Jiraporn Pongsopa ◽  
Kanchaya Honglertkongsakul
Keyword(s):  
Thin Films ◽  
Mechanical Properties ◽  
Magnetron Sputtering ◽  
Partial Pressure ◽  
Photoelectron Spectroscopy ◽  
Nitrogen Partial Pressure ◽  
X Ray ◽  
Pressure Chemical ◽  
Aisi D2 ◽  
Steel Substrates

Ti-W-N thin films grown on Si (100) and AISI D2 steel substrates had been deposited by a d.c. magnetron sputtering with pure Ti and W targets in a mixture of Ar and N2 plasma. The nitrogen partial pressure was varied from 0% to 9% of total gas. All Ti-W-N films were formed in solid solution with determination by x-ray diffractrogram analysis. A strong preferred orientation TiN(111) was detected. Their mechanical properties were studied using nanoindentation with Berkovich tip. An increase in hardness was observed with increasing nitrogen partial pressure. The optimum protective coating for plastic deformation was Ti-W-N film grown at 9% nitrogen partial pressure. Chemical bonding of Ti-W-N films was investigated by x-ray photoelectron spectroscopy. Binding energy analysis showed that N was mainly in TiN and W2N. The corrosion behavior was studied in variation of nitrogen partial pressure. Ti-W-N films deposited on steel at low nitrogen partial pressure showed excellent corrosion resistance in NaCl solution.

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