Thin Metal Film Adhesion Studies on GaAs

1986 ◽  
Vol 77 ◽  
Author(s):  
T. T. Bardin ◽  
J. G. Pronko ◽  
D. K. Kinell
Keyword(s):  
Ion Beam ◽  
Substrate Surface ◽  
Surface Preparation ◽  
Thin Metal Film ◽  
Optimum Conditions ◽  
Adhesive Properties ◽  
Ion Beam Mixing ◽  
Film Adhesion ◽  
Thin Film Adhesion

ABSTRACTComparative thin film adhesion studies were performed on GaAs substrates using Au or Au-Ni-Ge, metallization materials. The influence of parameters such as crystal orientation, substrate surface preparation, deposition vacuum conditions, thickness and composition of films, and post-evaporative treatment such as ion-beam mixing and thermal annealing, on film adhesion was considered. The quality of the adhesion bond was measured using Scotch tape tests and a Sebastian adhesion tester. Film interfaces were characterized using AES, XPS, and RBS techniques. The results indicate that the most important factors dominating the quality of adhesion were surface preparation and the deposition vacuum conditions. Films deposited under optimum conditions were found to adhere so well that the GaAs crystal would fracture before the film would pull free of the substrate. The influence of ion beam mixing on the quality of adhesion was tested and only in the cases of depositions under the less optimum conditions, where the adhesion was poor, could an improvement be made in the adhesive properties.

scholarly journals Influence of Ion Beam Mixing on the Growth of High Temperature Oxide Superconducting Thin Film

1989 ◽  
Vol 157 ◽  
Author(s):  
N. Bordes ◽  
A.D. Rollett ◽  
M. Cohen ◽  
M. Nastasi
Keyword(s):  
Thin Film ◽  
High Temperature ◽  
Ion Beam ◽  
Superconducting Film ◽  
Superconducting Thin Film ◽  
Ion Beam Mixing ◽  
Lattice Matching ◽  
High Temperature Oxide ◽  
Dose Dependent

ABSTRACTThe superconducting properties of high temperature superconductor (HTS) thin films fabricated using the BaF2 process are dependent on the quality of the substrate used to grow these films. In order to maximize the lattice matching between the superconducting film and the substrate, we have used a YBa2Cu3O7, thin film deposited on <100> SrTiO3 as a template. The first film was prepared by co-evaporation of Y, BaF2 and Cu on <100> SrTiO3, followed by an anneal in “wet” oxygen at 850 °C. This film showed a sharp transition at about 90 K. A thicker layer of about 5000 A was then deposited on top of this first 2000 Å film, using the same procedure. After the post anneal at 900 °C, the transition took place at 82 K and no epitaxy of the second film was observed. Ion beam mixing at 400 °C, using 400 keV O ions was done at the interface of the two films (the second one being not annealed). After the post anneal, the film displayed an improved Tc at 88K. Moreover, epitaxial growth was observed to take place at the ion mixed two-layer interface which was dose dependent. These results suggest that the homoepitaxy of the second layer on the first is interface limited and can be enhanced by ion mixing treatments.

Nanostructuration of Cr/Si layers induced by ion beam mixing

2013 ◽  
Vol 1514 ◽  
pp. 61-68
Author(s):  
L. Luneville ◽  
L. Largeau ◽  
C. Deranlot ◽  
N. Moncoffre ◽  
Y. Serruys ◽  
...  
Keyword(s):  
Concentration Profile ◽  
Ion Beam ◽  
Error Function ◽  
Ion Beam Mixing ◽  
X Ray ◽  
Microelectronic Devices ◽  
Simple Error

ABSTRACTThis work clearly demonstrates that the X Ray Reflectometry technique (XRR), extensively used to assess the quality of microelectronic devices can be a useful tool to study the first stages of ion beam mixing. This technique allows measuring the evolution of the Si concentration profile in irradiated Cr/Si layers. From the analysis of the XRR profiles, it clearly appears that the Si profile cannot be described by a simple error function.

Structural Evaluation of Graphene/SiC (0001) Grown in Atmospheric Pressure

2010 ◽  
Vol 645-648 ◽  
pp. 573-576 ◽  
Author(s):  
John Boeckl ◽  
W.C. Mitchel ◽  
Edwina Clarke ◽  
Roland L. Barbosa ◽  
Wei Jie Lu
Keyword(s):  
Atmospheric Pressure ◽  
Substrate Surface ◽  
Surface Preparation ◽  
Graphene Growth ◽  
Disordered Structures ◽  
Structural Evaluation ◽  
Entire Substrate Surface ◽  
Atomically Flat

Graphene growth on SiC in atmospheric pressure argon exhibits large terrace sizes and coverage over the entire substrate surface. Graphene growth and the resulting morphology are correlated with the characteristics of the growth chamber and the surface quality of the starting SiC substrate. Without in-situ surface preparation prior to growth, we observe “wrinkles” in the graphene surface. Graphitic-like disordered structures are formed at 1500°C while atomically flat graphene terraces are formed above 1600°C.

Optical and magnetic properties of MnBi formed directly by ion beam mixing

1989 ◽  
Vol 4 (5) ◽  
pp. 1151-1155 ◽  
Author(s):  
Yoshiaki Kido ◽  
Masa-aki Tada
Keyword(s):  
Room Temperature ◽  
Metastable Phase ◽  
Ion Beam ◽  
Substrate Surface ◽  
High Temperature Phase ◽  
Temperature Phase ◽  
Ion Beam Mixing ◽  
Protection Effect ◽  
Optical And Magnetic Properties ◽  
Kinetics Of

Multilayers of Mn/Bi were irrradiated with 400 keV Xe+ at temperatures from 80 to 550 K. Ferromagnetic MnBi layers oriented perpendicular to the substrate surface were formed directly at mixing temperatures from room temperature (RT) to 500 K. The measurements of Curie point and optical Faraday rotation revealed that 60–70 at. % of MnBi ion-mixed at RT is the metastable phase (QIITP: quenched high temperature phase). The fraction of QIITP is reduced with increase in mixing temperature. It was also found that ion beam mixing yields a pronounced protection effect against the deterioration of MnBi in a moist atmosphere. A detailed discussion is given on the kinetics of ion beam mixing and the growth mechanism of the metastable MnBi grains.

Vitreous Enamel Coating on Steel Substrates

2009 ◽  
Vol 147-149 ◽  
pp. 856-860 ◽  
Author(s):  
Kamila Hrabovská ◽  
Jitka Podjuklová ◽  
Karla Barčová ◽  
Lenka Dobrovodská ◽  
Katerina Pelikánová
Keyword(s):  
Enamel Coating ◽  
Steel Substrate ◽  
Substrate Surface ◽  
Phase Interface ◽  
Adhesive Properties ◽  
Vitreous Enamel ◽  
Enamel Slip ◽  
Pre Treatment ◽  
Steel Substrates

Vitreous enamel is a glassy coating formed on a metal substrate by firing at temperatures above 800 °C. The quality of vitreous enamel coating depends on the pre-treatment of the steel substrate surface and the quality of enamel slip. The main aim of this study was to characterize the composition of the steel substrate surface after firing with double finish, to explain the effect of steel substrate surface pre-treatment (blasting, acid pickling) on forming the phase interface of the steel substrate – vitreous coating system, and on its final microhardness, fracture strength and the adhesive properties of the coating. To achieve these aims, the following experimental methods were used: Mössbauer spectroscopy, X-ray diffraction, electron analyzer, and EDAX. Based on the chemical composition of the initial enamel slip and the firing technology, the metal - enamel system interface exhibited various ratios of layers of magnetite, hematite, nonstoichiometric wüstite, and crystals of faylite. The measuring results indicate that the quality and age of enamel slip influences the brittle fracture properties of vitreous enamel coating.

Si Surface Preparation with Si Beam Irradiation on the Growth of III-V on Si

1997 ◽  
Vol 485 ◽  
Author(s):  
H. Kawanami ◽  
K. Baskar ◽  
I. Sakata ◽  
T. Sekigawa
Keyword(s):  
Substrate Temperature ◽  
Substrate Surface ◽  
Surface Preparation ◽  
Photoluminescence Spectra ◽  
Slight Improvement ◽  
Beam Irradiation ◽  
Irradiation Effects ◽  
Experimental Conditions ◽  
Initial Substrate

AbstractThe preliminary results of the effects of the Si beam irradiation for the Si surface preparation on the growth of GaAs on Si by MBE are reported. The effects are combined with thermal cyclic anneal (TCA). A slight improvement in the crystalline quality is observed on the photoluminescence spectra of the films grown with Si irradiation. In our experimental conditions, Si irradiation during the Si surface preparation has not indicated large effects on the FWHM of XRD. It is also indicated that initial substrate surface treatment affects the quality of thicker film through TCA treatment. Higher substrate temperature during Si beam irradiation is expected to indicate positive Si beam irradiation effects.

Characterization of homoepitaxial diamond films by Electron microscopy

1991 ◽  
Vol 49 ◽  
pp. 880-881
Author(s):  
D.P. Malta ◽  
S.A. Willard ◽  
R.A. Rudder ◽  
G.C. Hudson ◽  
J.B. Posthill ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Surface Defects ◽  
Substrate Surface ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Polycrystalline Diamond ◽  
Large Degree ◽  
Rf Plasma ◽  
Semiconducting Diamond

Semiconducting diamond films have the potential for use as a material in which to build active electronic devices capable of operating at high temperatures or in high radiation environments. A major goal of current device-related diamond research is to achieve a high quality epitaxial film on an inexpensive, readily available, non-native substrate. One step in the process of achieving this goal is understanding the nucleation and growth processes of diamond films on diamond substrates. Electron microscopy has already proven invaluable for assessing polycrystalline diamond films grown on nonnative surfaces.The quality of the grown diamond film depends on several factors, one of which is the quality of the diamond substrate. Substrates commercially available today have often been found to have scratched surfaces resulting from the polishing process (Fig. 1a). Electron beam-induced current (EBIC) imaging shows that electrically active sub-surface defects can be present to a large degree (Fig. 1c). Growth of homoepitaxial diamond films by rf plasma-enhanced chemical vapor deposition (PECVD) has been found to planarize the scratched substrate surface (Fig. 1b).

Ion Beam Mixing of Ni-Ti Bilayered Thin Films

1985 ◽  
Vol 43 ◽  
pp. 290-291
Author(s):  
A. K. Rai ◽  
R. S. Bhattacharya ◽  
M. H. Rashid
Keyword(s):  
Crystal Structure ◽  
Thin Films ◽  
Amorphous Alloys ◽  
Ion Beam ◽  
Ion Bombardment ◽  
High Energy ◽  
Mixing Efficiency ◽  
Ion Beam Mixing ◽  
Enhanced Diffusion ◽  
Binary Metal

Ion beam mixing has recently been found to be an effective method of producing amorphous alloys in the binary metal systems where the two original constituent metals are of different crystal structure. The mechanism of ion beam mixing are not well understood yet. Several mechanisms have been proposed to account for the observed mixing phenomena. The first mechanism is enhanced diffusion due to defects created by the incoming ions. Second is the cascade mixing mechanism for which the kinematicel collisional models exist in the literature. Third mechanism is thermal spikes. In the present work we have studied the mixing efficiency and ion beam induced amorphisation of Ni-Ti system under high energy ion bombardment and the results are compared with collisional models. We have employed plan and x-sectional veiw TEM and RBS techniques in the present work.

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