scholarly journals Influence of Ion Beam Mixing on the Growth of High Temperature Oxide Superconducting Thin Film

1989 ◽  
Vol 157 ◽  
Author(s):  
N. Bordes ◽  
A.D. Rollett ◽  
M. Cohen ◽  
M. Nastasi
Keyword(s):  
Thin Film ◽  
High Temperature ◽  
Ion Beam ◽  
Superconducting Film ◽  
Superconducting Thin Film ◽  
Ion Beam Mixing ◽  
Lattice Matching ◽  
High Temperature Oxide ◽  
Dose Dependent

ABSTRACTThe superconducting properties of high temperature superconductor (HTS) thin films fabricated using the BaF2 process are dependent on the quality of the substrate used to grow these films. In order to maximize the lattice matching between the superconducting film and the substrate, we have used a YBa2Cu3O7, thin film deposited on <100> SrTiO3 as a template. The first film was prepared by co-evaporation of Y, BaF2 and Cu on <100> SrTiO3, followed by an anneal in “wet” oxygen at 850 °C. This film showed a sharp transition at about 90 K. A thicker layer of about 5000 A was then deposited on top of this first 2000 Å film, using the same procedure. After the post anneal at 900 °C, the transition took place at 82 K and no epitaxy of the second film was observed. Ion beam mixing at 400 °C, using 400 keV O ions was done at the interface of the two films (the second one being not annealed). After the post anneal, the film displayed an improved Tc at 88K. Moreover, epitaxial growth was observed to take place at the ion mixed two-layer interface which was dose dependent. These results suggest that the homoepitaxy of the second layer on the first is interface limited and can be enhanced by ion mixing treatments.

Search for Ion Induced Mixing in Ceramic-Ceramic Systems

1995 ◽  
Vol 396 ◽  
Author(s):  
K.R. Padmanabhan
Keyword(s):  
Auger Electron Spectroscopy ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Ion Beam ◽  
Epitaxial Films ◽  
Ion Beam Mixing ◽  
Ceramic Substrates ◽  
Ion Channeling ◽  
Ceramic Films ◽  
Dose Dependent

AbstractThin sputtered ceramic films deposited on ceramic substrates were subjected to either Kr+ or Xe+ ion bombardment for ion beam mixing studies in ceramic-ceramic systems. The amount of mixing if any was evaluated from Rutherford backscattering and Auger electron spectroscopy. In some instances ceramic films were deposited on epitaxial films or single crystal substrates for ion channeling analysis. No significant mixing was observed in any of the systems with ZrC. However, analysis of the interface in Si3N4/ SiC system indicates appreciable mixing and ion beam induced damage to the substrate. The mixing appears to be dose dependent for heavier ions.

Ion-beam mixing of Ni/Pd layers: I. Cascade mixing regime (low temperature)

1988 ◽  
Vol 3 (6) ◽  
pp. 1057-1062 ◽  
Author(s):  
U. G. Akano ◽  
D. A. Thompson ◽  
J. A. Davies ◽  
W. W. Smeltzer
Keyword(s):  
Thin Film ◽  
Ion Beam ◽  
Heavy Ion ◽  
Square Root ◽  
Ion Beam Mixing ◽  
Dose Comparison ◽  
Mixing Regime ◽  
Constant Dose ◽  
Constant Dose Rate

A tomic mixing resulting from heavy-ion bombardment of thin-film Ni/Pd bilayers and thin Pd markers sandwiched between Ni layers has been investigated. Mixing experiments were performed over a temperature range 40–473 K, using 120 keV Ar+ and 145 keV Kr+ ions at a constant dose rate of 5.5 × 1012 ions cm −2s−1 for doses up to 4 × 1016cm−2. The resulting interdiffusion was measured, in situ, using Rutherford backscattering with 2−2.8 MeV 4He+ ions. The results showed that, for both markers and bilayers, the amount of mixing is similar for both configurations and varies linearly with the square root of the ion dose. Comparison of the induced mixing per ion, following irradiation at 40 K, shows that the mixing is dependent on the damage energy FD deposited at the interface region. The mixing is essentially athermal.

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