Nanostructuration of Cr/Si layers induced by ion beam mixing

2013 ◽  
Vol 1514 ◽  
pp. 61-68
Author(s):  
L. Luneville ◽  
L. Largeau ◽  
C. Deranlot ◽  
N. Moncoffre ◽  
Y. Serruys ◽  
...  
Keyword(s):  
Concentration Profile ◽  
Ion Beam ◽  
Error Function ◽  
Ion Beam Mixing ◽  
X Ray ◽  
Microelectronic Devices ◽  
Simple Error

ABSTRACTThis work clearly demonstrates that the X Ray Reflectometry technique (XRR), extensively used to assess the quality of microelectronic devices can be a useful tool to study the first stages of ion beam mixing. This technique allows measuring the evolution of the Si concentration profile in irradiated Cr/Si layers. From the analysis of the XRR profiles, it clearly appears that the Si profile cannot be described by a simple error function.

Ion beam mixing of Pd/V superlattices studied by X-ray diffractometry

1989 ◽  
Vol 213 (2-3) ◽  
pp. A230
Author(s):  
M. StróŻak ◽  
P. MikoŁajczak ◽  
M. Subotowicz
Keyword(s):  
Ion Beam ◽  
Ion Beam Mixing ◽  
X Ray

Characterization of Natural and Synthesized FeTiO3 Crystals With RBS/PIXE/XRD

1997 ◽  
Vol 07 (03n04) ◽  
pp. 265-275
Author(s):  
R. Q. Zhang ◽  
S. Yamamoto ◽  
Z. N. Dai ◽  
K. Narumi ◽  
A. Miyashita ◽  
...  
Keyword(s):  
Single Crystals ◽  
Ion Beam ◽  
Pressure Control ◽  
Floating Zone ◽  
X Ray Diffraction ◽  
X Ray ◽  
Beam Analysis ◽  
Ppm Level

Natural FeTiO 3 (illuminate) and synthesized FeTiO 3, single crystals were characterized by Rutherford backscattering spectroscopy combined with channeling technique and particle-induced x-ray emission (RBS-C and PIXE). The results obtained by the ion beam analysis were supplemented by the x-ray diffraction analysis to identify the crystallographic phase. Oriented single crystals of synthesized FeTiO 3 were grown under the pressure control of CO 2 and H 2 mixture gas using a single-crystal floating zone technique. The crystal quality of synthesized FeTiO 3 single crystals could be improved by the thermal treatment but the exact pressure control is needed to avoid the precipitation of Fe 2 O 3 even during the annealing procedure. Natural FeTiO 3 contains several kinds of impurities such as Mn , Mg , Na and Si . The synthesized samples contain Al , Si and Na which are around 100 ppm level as impurities. The PBS-C results of the natural sample imply that Mn impurities occupy the Fe sublattice in FeTiO 3 or in mixed phase between ilmenite and hematite.

X-ray absorption spectroscopy of Ag-Cr and Pd-Cr alloys formed by ion-beam-mixing

2000 ◽  
Vol 70 (1) ◽  
pp. 59-63 ◽  
Author(s):  
Y.S. Lee ◽  
K.Y. Lim ◽  
Y.D. Chung ◽  
C.N. Whang ◽  
Y. Jeon
Keyword(s):  
Absorption Spectroscopy ◽  
Ion Beam ◽  
Ion Beam Mixing ◽  
X Ray ◽  
X Ray Absorption

Growth of MBE-Codeposited IrSi3 on Si(111) and Si(100)

1994 ◽  
Vol 299 ◽  
Author(s):  
Gary A. Gibson ◽  
Davis A. Lange ◽  
Charles M. Falco
Keyword(s):  
Ion Beam ◽  
Silicide Phase ◽  
X Ray Diffraction ◽  
X Ray ◽  
Low Energy Electron Diffraction ◽  
Growth Modes ◽  
Transmission Electron ◽  
Low Energy Electron

AbstractWe have used Molecular Beam Epitaxy (MBE) to successfully grow films that are predominantly IrSi3 on both Si(111) and Si(100) substrates by codeposition of Si and Ir in a 3:1 ratio. Bragg-Brentano and Seemann-Bohlin x-ray diffraction reveal that polycrystalline IrSi3 films form as low as 450 °C. This is the lowest temperature yet reported for growth of this iridium silicide phase. These x-ray diffraction techniques, along with Transmission Electron Microscope (TEM) diffraction and in situ Low Energy Electron Diffraction (LEED), show that at higher deposition temperatures codeposition can form IrSi3 films on Si(111) that consist predominantly of a single epitaxial growth orientation. Ion beam channeling and x-ray rocking curves show that the epitaxial quality of IrSi3 films deposited on Si(111) is superior to that of IrSi3 films deposited on Si(100). We also present evidence for several new epitaxial IrSi3 growth modes on Si(111) and Si(100).

Ion beam mixing of Pd/V superlattices studied by X-ray diffractometry

1989 ◽  
Vol 213 (2-3) ◽  
pp. 580-587 ◽  
Author(s):  
M. Stróżak ◽  
P. Mikołajczak ◽  
M. Subotowicz
Keyword(s):  
Ion Beam ◽  
Ion Beam Mixing ◽  
X Ray

Soft X-ray emission spectroscopy of low-dimensional SiO2 /Si interfaces after Si+ ion implantation and ion beam mixing

2010 ◽  
Vol 207 (3) ◽  
pp. 743-747 ◽  
Author(s):  
D. A. Zatsepin ◽  
S. Kaschieva ◽  
M. Zier ◽  
B. Schmidt ◽  
H.-J. Fitting
Keyword(s):  
Ion Implantation ◽  
Emission Spectroscopy ◽  
Ion Beam ◽  
Ion Beam Mixing ◽  
X Ray ◽  
Low Dimensional ◽  
Si Ion Implantation
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